arXiv subjects

Quanzhen Zhang

Publications and source records attributed to Quanzhen Zhang.

4 recordsLinked to original sources

arXiv2026

Superconducting proximity effect in a strongly correlated charge-transfer insulator

Proximity-induced superconductivity in strongly correlated insulators provides a versatile route for engineering quantum states of matter and artificial systems with tailored functionalities. However, microscopic interplay between superconductivity and correlated insulating states remains poorly understood. Here we use ultralow-temperature scanning tunnelling microscopy (STM) to systemically investigate superconducting proximity effects in a charge-transfer insulator. Via STM tip manipulation, atomically sharp lateral junctions composed of superconducting monolayer H-NbSe2 and charge-transfer insulating monolayer T-NbSe2 are constructed, enabling direct access to tunable coupling regimes. In the weak-coupling regime, there is a robust proximity-induced superconducting gap in T-NbSe2, with a reduced gap value relative to that of H-NbSe2. Upon entering the strong-coupling regime, T-NbSe2 exhibits a superconducting gap comparable to that of H-NbSe2, accompanied by pronounced particle-hole-symmetric in-gap bound states, consistent with Yu-Shiba-Rusinov-like excitations. These findings establish monolayer H/T-NbSe2 lateral junctions as a model platform for elucidating superconducting proximity effects in strongly correlated charge-transfer insulators.

cond-mat.supr-con↗

arXiv2022

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

cond-mat.mtrl-sci↗

arXiv2022

Atomic-Scale Visualization of Chiral Charge Density Wave States and Their Reversible Transition

Chirality is essential for various amazing phenomena in life and matter. However,chirality and its switching in electronic superlattices, such as charge density wave(CDW) arrays, remain elusive. In this study, we characterize the chirality transition with atom-resolution imaging in a single-layer NbSe2 CDW pattern by technique of scanning tunneling microscopy. The atomic lattice of the CDW array is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, the switching is reversibly realized with an external electric-field. Our findings unveil the delicate transition process of chiral CDW array in a 2D crystal down to the atomic scale and may be applicable for future nanoscale devices.

cond-mat.mtrl-sci↗

arXiv2021

Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a root3 x root3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

cond-mat.str-el↗