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Quentin Courtade

Publications and source records attributed to Quentin Courtade.

4 recordsLinked to original sources

Enhanced Valley Polarization via Nonlinear Cascaded Quantum-Geometric Selection Rules

The quantum geometric properties of Bloch electrons fundamentally govern light-matter interactions and optical selection rules in solids. In semiconducting transition-metal dichalcogenides, circularly polarized excitation near the band edge enables valley-selective interband transitions, providing the basis for valleytronics. While nonlinear optical protocols are being developed to manipulate and probe valley selection rules, they largely rely on band-edge transitions that proceed via virtual intermediate states. Here, we demonstrate a doubly resonant cascaded nonlinear pathway from the valence band to high-lying states, mediated by a real intermediate state whose participation substantially reshapes the valley optical selection rules. Using time- and angle-resolved extreme-ultraviolet photoemission spectroscopy in combination with a time-dependent Lindblad master-equation formalism, we show that this cascaded nonlinear photoexcitation produces a substantially enhanced high-lying valley polarization compared to the conventional linear optical response near the band edge. The extension of the quantum-geometry-based selection rules to the nonlinear regime and high-lying bands offers new perspectives for ultrafast valleytronics and should play a determinant role in strong-field-driven phenomena in quantum materials.

cond-mat.mtrl-sci

Dielectric Screening in Electromagnetic Dressing of Semiconductors

Nonequilibrium manipulation of quantum materials via electromagnetic dressing provides an on-demand route to tailoring electronic band structures through Floquet engineering. Time- and angle-resolved photoemission spectroscopy offers a direct means to probe these light-dressed electronic states. In such photoemission experiments, dressing can also occur for quasi-free electrons outside the material, giving rise to Volkov states. In certain cases, strong surface screening reduces the penetration of the driving field into the solid, resulting in Volkov contributions that dominate over Floquet ones. In this work, we systematically investigate the influence of materials' dielectric properties on Floquet-Volkov dressing of semiconductors, focusing on bulk layered van der Waals materials GeS, SnS, and 2H-WSe$_2$. First, by combining a simple model based on Fresnel equations with an electron-scattering description of Volkov amplitudes, we use polarization-dependent Volkov sideband intensities to extract a lower bound for the real part of the materials' dielectric functions, which typically lie between the reported dielectric constants for monolayer and bulk crystals. We demonstrate that increasing the fluence of the pump laser enables the generation of high-order Volkov sidebands which exhibit clear signatures of nonlinear light-matter interactions. Finally, we show that for our experimental geometry, the quasi-transparent nature of semiconductors in below-band-gap driving regime allows the optical pump to propagate within the sample and undergo multiple total internal reflections, producing temporally delayed Volkov replicas in pump-probe measurements via dressing of photoelectrons by evanescent fields. These systematic studies uncover previously unexplored aspects of Floquet-Volkov dressing in solids, highlighting the role of dielectric screening of the driving field.

cond-mat.mtrl-sci

Electron-phonon-dominated charge-density-wave fluctuations in TiSe$_2$ accessed by ultrafast nonequilibrium dynamics

The complex phase diagram of 1T-TiSe2 consists of a charge density wave (CDW) below 200 K, and CDW fluctuations of still unknown origin at higher temperatures. Here, we use time-resolved extreme ultraviolet momentum microscopy and density functional perturbation theory to uncover the formation mechanism of CDW fluctuations and their spectral features at 295 K. We investigated the transient dynamics of fluctuations upon nonresonant ultrafast photoexcitation, and directly correlate it with the CDW soft-phonon hardening. Surprisingly, our results show that the coherent amplitude mode modulating ultrafast CDW recovery persists above TCDW, and reveal that CDW fluctuations are dominated by the electron-phonon interaction rather than excitonic correlations as commonly believed. Our findings on these microscopic CDW fluctuations clarify the complex interplay between electronic and lattice degrees of freedom at elevated temperatures and, therefore, could be useful in understanding the nature of the CDW phase transition in 1T-TiSe2 and similar quantum materials.

cond-mat.str-el

Time- and Polarization-Resolved Extreme Ultraviolet Momentum Microscopy

We report the development of an instrument combining an ultrafast, high-repetition-rate, polarization-tunable monochromatic extreme ultraviolet (XUV, 21.6 eV) beamline and a next-generation momentum microscope endstation. This setup enables time- and angle-resolved photoemission spectroscopy of quantum materials, offering multimodal photoemission dichroism capabilities. The momentum microscope simultaneously detects the full surface Brillouin zone over an extended binding energy range. It is equipped with advanced electron optics, including a new type of front lens that supports multiple operational modes. Enhanced spatial resolution is achieved by combining the small XUV beam footprint (33 $\mu$m by 45 $\mu$m) with the selection of small regions of interest using apertures positioned in the Gaussian plane of the momentum microscope. This instrument achieves an energy resolution of 44 meV and a temporal resolution of 144 fs. We demonstrate the capability to perform linear, Fourier, and circular dichroism in photoelectron angular distributions from photoexcited 2D materials. This functionality paves the way for time-, energy-, and momentum-resolved investigations of orbital and quantum geometrical properties underlying electronic structures of quantum materials driven out of equilibrium.

cond-mat.mtrl-sci