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Qunqing Li

Publications and source records attributed to Qunqing Li.

4 recordsLinked to original sources

Planar Nanofluidic Memristors Enabled by Surface Charge Gradient

Nanofluidic memristors, exploiting ion transport in nanochannels, hold promise for neuromorphic applications. A planar architecture is particularly desired for scalable integration with established micro- and nanofabrication technologies. Here, using the Poisson-Nernst-Planck framework, we theoretically propose planar nanofluidic memristors enabled by surface charge gradient, providing an alternative to the commonly used geometrically asymmetric architectures. The resulting memristive behavior is governed by a diffusion-mediated secondary enrichment effect. By systematically solving the PNP equations, we obtain the scaling of the characteristic memory time across the parameter space. We also reveal that the memory effect is related to the first-order moment of surface charge, for arbitrary charge profiles. These results provide a theoretical basis for rationally designing and optimizing planar nanofluidic memristors through spatially patterned surface charge.

cond-mat.mes-hall

Formalizing Poisson-Boltzmann Theory for Field-Tunable Nanofluidic Devices

Nanofluidic devices support unconventional ion transport appealing to energy and information technologies, thanks to the susceptibility of confined electric double layers (EDLs) to various external physical fields. Although experimental studies advance rapidly, the rationalization of field-tunable nanofluidic transport has not reached a formalized and unified level. Here we reformulate the Poisson-Boltzmann theory and reveal distinct EDL regimes on the parameter space. Based on the regime classification, we establish a formal framework for the tunable nanofluidic transport and discuss the electrostatic modulation (ionic transistor) extensively. The framework reproduces the observed conductivity-concentration scaling behaviors, rationalizes the ionic transistors with reconfigurable polarities, and predicts one fundamental thermodynamic limit for electrostatic modulation (60 mV/dec). Being accurate, generalizable and extensible, this framework can account for a wide range of ion transport in confined spaces.

cond-mat.mes-hall

Fano-resonance boosted cascaded field enhancement in a plasmonic nanoparticle-in-cavity nanoantenna array and its SERS application

Cascaded optical field enhancement (CFE) can be realized in some specially designed multiscale plasmonic nanostructures, where the generation of extremely strong field at nanoscale volume is crucial for many applications, for example, surface enhanced Raman spectroscopy (SERS). Here, we propose a strategy of realizing a high-quality plasmonic nanoparticle-in-cavity (PIC) nanoantenna array, where strong coupling between a nanoparticle dark mode with a high order nanocavity bright mode can produce Fano resonance at a target wavelength. The Fano resonance can effectively boost the CFE in the PIC, with a field enhancement factor up to 5X10^2. A cost-effective and reliable nanofabrication method is developed with room temperature nanoimprinting lithography to manufacture high-quality PIC arrays. This technique guarantees the generation of only one gold nanoparticle at the bottom of each nanocavity, which is crucial for the generation of the expected CFE. As a demonstration of the performance and application of the PIC array, it is used as active SERS substrate for detecting 4-aminothiophenol molecules. The SERS enhancement factor up to 2X10^7 is obtained experimentally, verifying the field enhancement and potential of this device.

physics.optics

Vortex dynamics of a $d+is$-wave superconductor

The vortex dynamics of a d+is-wave superconductor is studied numerically by simulating the time-dependent Ginzburg-Landau equations. The critical fields, the free flux flow, and the flux flow in the presence of twin-boundaries are discussed. The relaxation rate of the order parameter turns out to play an important role in the flux flow. We also address briefly the intrinsic Hall effect in d- and d+is-wave superconductors.

cond-mat.supr-con