arXiv subjects

R. A. Buhrman

Publications and source records attributed to R. A. Buhrman.

At least 19 recordsLinked to original sources

arXiv2022

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high speed, low energy magnetic recording technologies. While fast switching has been demonstrated in three terminal magnetic tunnel junctions (3T-MTJs) through applying short voltage pulses in the heavy metal channel, detailed understanding of the switching mechanism is lacking due to the complexity of the multi-layered magnetic structure and the three-terminal geometry. We show in this letter that current-induced effective fields play a key role in the fast switching and by tuning the applied external field we can finely tune the symmetry of the pulse switching between two switching polarities, namely parallel to anti-parallel (P-AP) and anti-parallel to parallel (AP-P). These results show that the manipulation of detailed magnetic configuration is the key to fast switching and is a useful way for future optimization of SOT memory and further applications.

cond-mat.mes-hall↗

arXiv2021

Interfacial and bulk spin Hall contributions to field-like spin-orbit torque generated by Iridium

We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a damping-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnetic anisotropy. We also observe a surprisingly large field like spin orbit torque. Measurements as a function of Ir thickness indicate a substantial contribution to the FLT from an interface mechanism so that in the ultrathin limit there is a non-zero FLT with a maximum torque conductivity -5.0E4 in the SI unit. When the Ir film thickness becomes comparable to or greater than its spin diffusion length, 1.6 nm, there is also a smaller bulk contribution to the fieldlike torque.

cond-mat.mes-hall↗

arXiv2021

Lack of simple correlation between switching current density and spin-orbit torque efficiency of perpendicularly magnetized spin-current generator/ferromagnet heterostructures

Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque (ξ_DL^j) and the critical switching current density of perpendicularly magnetized spin-current generator/ferromagnet heterostructures. We find that the values of ξ_DL^j based on switching current densities can either under- or over-estimated ξ_DL^j by up to tens of times in a domain-wall depinning analysis, while in the macrospin analysis based on the switching current density ξ_DL^j can be overestimated by up to thousands of times. When comparing the relative strengths of ξ_DL^j of spin-current generators, the critical switching current densities by themselves are a poor predictor.

cond-mat.mtrl-sci↗

arXiv2020

Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films

Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high damping like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application.

cond-mat.mes-hall↗

arXiv2020

Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures

We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnetic roughness at this interface. TMS at the FM/oxide interface is relatively weak, even in systems where spin-orbit coupling at this interface generates strong interfacial magnetic anisotropy. We also suggest that the spin-current-induced excitation of non-uniform short-wavelength magnon at the HM/FM interface may function as a mechanism of spin memory loss for the spin-orbit torque exerted on the uniform mode.

cond-mat.mtrl-sci↗

arXiv2019

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.

physics.app-ph↗

arXiv2019

Maximizing the spin-orbit torque efficiency of Pt/Ti multilayers by optimization of the tradeoff between the intrinsic spin Hall conductivity and carrier lifetime

We report a comprehensive study of the maximization of the spin Hall ratio (θSH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall conductivity. We establish that the intrinsic spin Hall conductivity of Pt, while robust against the strain and the moderate interruption of crystal order caused by these insertions, begins to decrease rapidly at high resistivity level because of the shortening carrier lifetime. The unavoidable trade-off between the intrinsic spin Hall conductivity and carrier lifetime sets a practical upper bound of θSH >=0.8 for heterogeneous materials where the crystalline Pt component is the source of the spin Hall effect and the resistivity is increased by shortening carrier lifetime. This work also establishes a very promising spin-Hall metal of [Pt 0.75 nm/Ti 0.2 nm]7/Pt 0.75 nm for energy-efficient, high-endurance spin-orbit torque technologies (e.g., memories, oscillators, and logic) due to its combination of a giant θSH of 0.8, or equivalently a dampinglike spin torque efficiency per unit current density of 0.35, with a relatively low resistivity (90 uOhm cm) and high suitability for practical technology integration.

cond-mat.mtrl-sci↗

arXiv2019

Enhancing spin-orbit torque by strong interfacial scattering from ultra-thin insertion layers

Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices. Here, we demonstrate that enhancing interfacial scattering by inserting ultra-thin layers within a spin Hall metals with intrinsic or side-jump mechanisms can significantly enhance the spin Hall ratio. The dampinglike SOT was enhanced by a factor of 2 via sub-monolayer Hf insertion, as evidenced by both harmonic response measurements and current-induced switching of in-plane magnetized magnetic memory devices with the record low critical switching current of ~73 uA (switching current density of 3.6x10^6 A/cm^2). This work demonstrates a very effective strategy for maximizing dampinglike SOT for low-power spin-torque devices.

cond-mat.mes-hall↗

arXiv2019

Spin-orbit torques in heavy metal/ferromagnet bilayers with varying strength of interfacial spin-orbit coupling

Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy metal (HM)/ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM interfaces is the dominant mechanism for "spin memory loss". An increase in ISOC significantly reduces, in a linear manner, the dampinglike spin-orbit torque (SOT) exerted on the FM layer via degradation of the spin transparency of the interface for spin currents generated in the HM. In addition, the fieldlike SOT is also dominated by the spin Hall contribution of the HM and decreases with increasing ISOC. This work reveals that ISOC at HM/FM interfaces should be minimized to advance efficient SOT devices through atomic layer passivation of the HM/FM interface or other means.

cond-mat.mtrl-sci↗

arXiv2018

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities.

cond-mat.mtrl-sci↗

arXiv2018

Irrelevance of magnetic proximity effect to spin-orbit torques in heavy metal/ferromagnet bilayers

The magnetic proximity effect (MPE) is a well-established magnetic phenomenon that occurs at certain heavy metal (HM)/ferromagnet (FM) interfaces. However, there is still an active debate as to whether the presence of a MPE affects spin transport through such a HM/FM interface. Here we demonstrate that the MPE at Pt/Co and Au0.25Pt0.75/Co interfaces can be enhanced substantially by thermal annealing protocols. From this ability, we show that the MPE has no discernable influence on either the damping-like or the field-like spin-orbit torques exerted on the FM layer due to the spin Hall effect of the HM layer, indicating a minimal role of the MPE compared to other interfacial effects, e.g. spin memory loss and spin backflow.

cond-mat.mtrl-sci↗

arXiv2018

Strong enhancement of the spin Hall effect by spin fluctuations near the Curie point of FexPt1-x alloys

Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely side-jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1-x alloys near their Curie point, tunable with x. This results in a damping-like spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 (+-) 0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM/FePt interface, and determine the spin diffusion length in these FexPt1-x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

cond-mat.mtrl-sci↗

arXiv2018

Efficient Switching of 3-Terminal Magnetic Tunnel Junctions by the Giant Spin Hall Effect of $\rm{Pt}_{85}\rm{Hf}_{15}$ Alloy

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a $\rm{Pt}_{85}\rm{Hf}_{15}$ alloy, and measuring the critical currents for switching. We find that $\rm{Pt}_{85}\rm{Hf}_{15}$ reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach to assist in the development of efficient embedded magnetic memory technologies.

cond-mat.mtrl-sci↗

arXiv2017

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin memory loss by introducing sub-atomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a beta-W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 x 106 A/cm2, more than a factor of 3 lower than demonstrated in any other spin-orbit-torque magnetic memory device at room temperature, and highly reliable switching with current pulses only 2 ns long.

cond-mat.mes-hall↗

arXiv2017

Strong perpendicular magnetic anisotropy energy density at Fe alloy/HfO2 interfaces

We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during the subsequent deposition of the MgO layer, as confirmed by X-ray photoelectron spectroscopy measurements. As the result a strong interfacial perpendicular anisotropy energy density can be achieved without any post-fabrication annealing treatment, for example 1.7 erg/cm^2 for the Ta/Fe60Co20B20/HfO2/MgO heterostructure. Depending on the HM, further enhancements of the PMA can be realized by thermal annealing to at least 400C. We show that ultra-thin HfO2 layers offer a range of options for enhancing the magnetic properties of magnetic heterostructures for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2016

Spin-Hall Torques Generated by Rare-Earth (Lanthanide) Thin Films

We report an initial experimental survey of spin-Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and DC-biased ST-FMR, we estimate lower bounds for the spin-Hall torque ratio, $ξ_{SH}$, of $\approx$ 0.04 for Gd, $\approx$ 0.05 for Dy, $\approx$ 0.14 for Ho, and $\approx$ 0.014 for Lu. The variations among these elements are qualitatively consistent with results from first principles (density functional theory, DFT, in the local density approximation with a Hubbard-U correction). The DFT calculations indicate that the spin Hall conductivity is enhanced by the presence of the partially-filled $f$ orbitals in Dy and Ho, which suggests a strategy to further strengthen the contribution of the $f$ orbitals to the spin Hall effect by shifting the electron chemical potential.

cond-mat.mes-hall↗

arXiv2016

Increased low-temperature damping in yttrium iron garnet thin films

We report measurements of the frequency and temperature dependence of ferromagnetic resonance (FMR) for a 15-nm-thick yttrium iron garnet (YIG) film grown by off-axis sputtering. Although the FMR linewidth is narrow at room temperature (corresponding to a damping coefficient $α$ = (9.0 $\pm$ 0.2) $\times 10^{-4}$), comparable to previous results for high-quality YIG films of similar thickness, the linewidth increases strongly at low temperatures, by a factor of almost 30. This increase cannot be explained as due to two-magnon scattering from defects at the sample interfaces. We argue that the increased low-temperature linewidth is due to impurity relaxation mechanisms that have been investigated previously in bulk YIG samples. We suggest that the low-temperature linewidth is a useful figure of merit to guide the optimization of thin-film growth protocols because it is a particularly sensitive indicator of impurities.

cond-mat.mes-hall↗

arXiv2016

Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.

cond-mat.mes-hall↗