R. Bates et al | Searcharxiv

arXiv1995

Model of charge transport in Semi-Insulating Undoped GaAs microstrip detectors

In this paper we present a method for simulating the response of microstrip detectors to minimum ionizing particles, making use of a program for field calculation, a program for carrier drift and SPICE for circuit response. A knowledge of the electric field is essential for any further improvement of the program. A simple model involving EL2 levels in the metastable state is proposed to explain some measurements of electric field.

hep-ex↗

arXiv1995

Noise Spectra of SIU-GaAs Pad Detectors With Guard Rings

This paper presents current noise characterization of circular pad Schottky barrier diodes with guard rings. The diodes were fabricated from undopped semi-insulating GaAs, SIU-GaAs, at the University of Glasgow. Current noise spectra were obtained for the detectors for two pad sizes, with reverse bias applied. Three measurements were also made on one of the detectors under forward bias. The noise spectra show an excess noise component, with a low frequency corner at less than 1kHz, and a flat region at higher frequencies. The magnitude of the white noise is approximately half that expected from shot noise theory for the given leakage currents. A fall in the magnitude of the noise was observed at 20kHz which is attributed to the dielectric relaxation time of the material.

hep-ex↗