arXiv subjects

R. Cardella

Publications and source records attributed to R. Cardella.

At least 19 recordsLinked to original sources

arXiv2024

Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer

A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by low-noise, high-speed front-end electronics built using 130 nm SiGe BiCMOS technology. It includes the PicoAD sensor, which employs a continuous, deep PN junction to generate avalanche gain. Data were taken across power densities from 0.05 to 2.6 W/cm2 and sensor bias voltages from 90 to 180 V. At the highest bias voltage, corresponding to an electron gain of 50, and maximum power density, an efficiency of (99.99 \pm 0.01)% was achieved. The time resolution at this working point was (24.3 \pm 0.2) ps before time-walk correction, improving to (12.1 \pm 0.3) ps after correction.

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arXiv2024

Radiative neutron capture cross section of $^{242}$Pu measured at n_TOF-EAR1 in the unresolved resonance region up to 600 keV

Accurate neutron capture cross sections are essential for the design and operation of fast reactors using MOX fuels. For $^{242}$Pu, the Nuclear Energy Agency (NEA) recommends 8--12% accuracy in the fast energy region (2--500 keV), compared to the current uncertainty of 35%. Moreover, integral experiments and previous measurements suggest the evaluated $^{242}$Pu(n,$\gamma$) cross section is overestimated, particularly in the JEFF-3.3 library, which shows a 14% overestimation between 1 keV and 1 MeV. Recent measurements from LANSCE reported a 20--30% reduction in the 1--40 keV range relative to evaluations. To solve these discrepancies, the $^{242}$Pu(n,$\gamma$) cross section was measured from 1 to 600 keV at CERN n_TOF-EAR1 facility using a 95(4) mg $^{242}$Pu target, enriched to 99.959%. Gamma rays from neutron capture were detected with an array of C$_6$D$_6$ scintillators and a novel application of the Pulse Height Weighting Technique was employed. The resulting cross section presents a systematic uncertainty between 8 and 12%, reducing the current uncertainties of 35\% and achieving the accuracy requested by the NEA. Analysis using FITACS produced average resonance parameters, consistent with the analysis of the resolved resonance region. Our data align well with Wisshak and Kaeppeler, and are 10--14\% lower than JEFF-3.3 in the 1--250 keV range, helping to achieve consistency with integral benchmarks. At higher energies, our results are in reasonable agreement with ENDF/B-VIII.1 and JEFF-3.3. In contrast, DANCE results appear to underestimate the cross section by a factor of 2--3 above a few keV.

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arXiv2024

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 \mu m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.

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arXiv2024

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.

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arXiv2023

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.

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arXiv2023

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer of 350 {\Omega}cm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.

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arXiv2022

Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.

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arXiv2022

Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype

The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $\mu$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.

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arXiv2022

High accuracy, high resolution 235U(n,f) cross section from n_TOF (CERN) in the thermal to 10 keV energy range

The 235U(n,f) cross section was measured in a wide energy range (25 meV - 170 keV) at the n_TOF facility at CERN, relative to 6Li(n,t) and 10B(n,alpha) standard reactions, with high resolution and accuracy, with a setup based on a stack of six samples and six silicon detectors placed in the neutron beam. In this paper we report on the results in the region between thermal and 10 keV neutron energy. A resonance analysis has been performed up to 200 eV, with the code SAMMY. The resulting fission kernels are compared with the ones extracted on the basis of the resonance parameters of the most recent major evaluated data libraries. A comparison of the n_TOF data with the evaluated cross sections is also performed from thermal to 10 keV neutron energy for the energy-averaged cross section in energy groups of suitably chosen width. A good agreement is found in average between the new results and the latest evaluated data files ENDF-B/VIII and JEFF-3.3, as well as with respect to the IAEA reference files. However, some discrepancies are still present in some specific energy regions. The new dataset here presented, characterized by unprecedented resolution and accuracy, can help improving the evaluations in the Resolved Resonance Region and up to 10 keV, and reduce the uncertainties that affect this region.

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arXiv2021

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.

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arXiv2019

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $\mu$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.

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arXiv2019

Measurement of the 235U(n,f) cross section relative to the 6Li(n,t) and 10B(n,alpha) standards from thermal to 170 keV neutron energy range at n_TOF

The 235U(n,f) cross section was measured in a wide energy range at n_TOF relative to 6Li(n,t) and 10B(n,alpha), with high resolution and in a wide energy range, with a setup based on a stack of six samples and six silicon detectors placed in the neutron beam. This allowed us to make a direct comparison of the reaction yields under the same experimental conditions, and taking into account the forward/backward emission asymmetry. A hint of an anomaly in the 10{\div}30 keV neutron energy range had been previously observed in other experiments, indicating a cross section systematically lower by several percent relative to major evaluations. The present results indicate that the evaluated cross section in the 9{\div}18 keV neutron energy range is indeed overestimated, both in the recent updates of ENDF/B-VIII.0 and of the IAEA reference data. Furthermore, these new high-resolution data confirm the existence of resonance-like structures in the keV neutron energy region. The new, high accuracy results here reported may lead to a reduction of the uncertainty in the 1{\div}100 keV neutron energy region. Finally, the present data provide additional confidence on the recently re-evaluated cross section integral between 7.8 and 11 eV.

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arXiv2018

CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade

Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC). LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~\mu m^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~\mu m^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.

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arXiv2018

The $^{7}$Be($\boldsymbol{n,p}$)$^{7}$Li reaction and the Cosmological Lithium Problem: measurement of the cross section in a wide energy range at n_TOF (CERN)

We report on the measurement of the $^{7}$Be($n, p$)$^{7}$Li cross section from thermal to approximately 325 keV neutron energy, performed in the high-flux experimental area (EAR2) of the n\_TOF facility at CERN. This reaction plays a key role in the lithium yield of the Big Bang Nucleosynthesis (BBN) for standard cosmology. The only two previous time-of-flight measurements performed on this reaction did not cover the energy window of interest for BBN, and showed a large discrepancy between each other. The measurement was performed with a Si-telescope, and a high-purity sample produced by implantation of a $^{7}$Be ion beam at the ISOLDE facility at CERN. While a significantly higher cross section is found at low-energy, relative to current evaluations, in the region of BBN interest the present results are consistent with the values inferred from the time-reversal $^{7}$Li($p, n$)$^{7}$Be reaction, thus yielding only a relatively minor improvement on the so-called Cosmological Lithium Problem (CLiP). The relevance of these results on the near-threshold neutron production in the p+$^{7}$Li reaction is also discussed.

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arXiv2018

Cross section measurements of $^{155,157}$Gd(n,$\gamma$) induced by thermal and epithermal neutrons

Neutron capture measurements on $^{155}$Gd and $^{157}$Gd were performed using the time-of-flight technique at the n\_TOF facility at CERN. Four samples in form of self-sustaining metallic discs isotopically enriched in $^{155}$Gd and $^{157}$Gd were used. The measurements were carried out at the experimental area (EAR1) at 185 m from the neutron source, with an array of 4 C$_6$D$_6$ liquid scintillation detectors. The capture cross sections of $^{155}$Gd and $^{157}$Gd at neutron kinetic energy of 0.0253 eV have been estimated to be 62.2(2.2) kb and 239.8(9.3) kb, respectively, thus up to 6\% different relative to the ones reported in the nuclear data libraries. A resonance shape analysis has been performed in the resolved resonance region up to 180 eV and 300 eV, respectively, in average resonance parameters have been found in good agreement with evaluations. Above these energies the observed resonance-like structures in the cross section have been tentatively characterised in terms of resonance energy and area up to 1 keV.

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arXiv2018

The $^{7}$Be(n,p)$^{7}$Li reaction and the Cosmological Lithium Problem: measurement of the cross section in a wide energy range at n_TOF (CERN)

We report on the measurement of the $^{7}$Be($n, p$)$^{7}$Li cross section from thermal to approximately 325 keV neutron energy, performed in the high-flux experimental area (EAR2) of the n_TOF facility at CERN. This reaction plays a key role in the lithium yield of the Big Bang Nucleosynthesis (BBN) for standard cosmology. The only two previous time-of-flight measurements performed on this reaction did not cover the energy window of interest for BBN, and showed a large discrepancy between each other. The measurement was performed with a Si-telescope, and a high-purity sample produced by implantation of a $^{7}$Be ion beam at the ISOLDE facility at CERN. While a significantly higher cross section is found at low-energy, relative to current evaluations, in the region of BBN interest the present results are consistent with the values inferred from the time-reversal $^{7}$Li($p, n$)$^{7}$Be reaction, thus yielding only a relatively minor improvement on the so-called Cosmological Lithium Problem (CLiP). The relevance of these results on the near-threshold neutron production in the p+$^{7}$Li reaction is also discussed.

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arXiv2017

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.

physics.ins-det↗

arXiv2017

Experimental setup and procedure for the measurement of the 7Be(n,p)7Li reaction at n_TOF

Following the completion of the second neutron beam line and the related experimental area (EAR2) at the n_TOF spallation neutron source at CERN, several experiments were planned and performed. The high instantaneous neutron flux available in EAR2 allows to investigate neutron indiced reactions with charged particles in the exit channel even employing targets made out of small amounts of short-lived radioactive isotopes. After the successful measurement of the 7Be(n,{\alpha}){\alpha} cross section, the 7Be(n,p)7Li reaction was studied in order to provide still missing cross section data of relevance for Big Bang Nucleosynthesis (BBN), in an attempt to find a solution to the cosmological Lithium abundance problem. This paper describes the experimental setup employed in such a measurement and its characterization.

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