arXiv subjects

R. Gaddi

Publications and source records attributed to R. Gaddi.

3 recordsLinked to original sources

arXiv2008

A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

In this work, we present a fully parameterized capped transmission line model for electromagnetic optimization of a wafer level package (WLP) for RF MEMS applications using the Ansoft HFSS-TM electromagnetic simulator. All the degrees of freedom (DoF's) in the package fabrication can be modified within the model in order to optimize for losses and mismatch (capacitive and inductive couplings) introduced by the cap affecting the MEMS RF behaviour. Ansoft HFSS-TM was also validated for the simulation of capped RF MEMS devices by comparison against experimental data. A test run of capped 50 transmission lines and shorts was fabricated and tested.

cs.OH↗

arXiv2008

A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches

We propose the design of a reconfigurable impedance matching network for the lower RF frequency band, based on a developed RF-MEMS technology. The circuit is composed of RF-MEMS ohmic relays, metal-insulator-metal (MIM) capacitors and suspended spiral inductors, all integrated on a high resistivity Silicon substrate. The presented circuit is well-suited for all applications requiring adaptive impedance matching between two in principle unknown cascaded RF-circuits. The fabrication and testing of a monolithic integrated prototype in RF-MEMS technology from ITC-irst is currently underway.

cs.OH↗

arXiv2007

Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

In RF-MEMS packaging, next to the protection of movable structures, optimization of package electrical performance plays a very important role. In this work, a wafer-level packaging process has been investigated and optimized in order to minimize electrical parasitic effects. The RF-MEMS package concept used is based on a wafer-level bonding of a capping silicon substrate to an RF-MEMS wafer. The capping silicon substrate resistivity, substrate thickness and the geometry of through-substrate electrical interconnect vias have been optimized using finite-element electromagnetic simulations (Ansoft HFSS). Test structures for electrical characterization have been designed and after their fabrication, measurement results will be compared with simulations.

cs.OH↗