arXiv subjects

R. H. Blick

Publications and source records attributed to R. H. Blick.

At least 19 recordsLinked to original sources

arXiv2020

Sublattice symmetry breaking and ultra low energy excitations in Graphene-on-hBN Heterostructures

The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of the terms involved (few tens of ueV). These low energy terms include sublattice splitting, the Rashba and the intrinsic spin-orbit coupling, whose balance determines the topological properties. In this work, we unravel the contributions arising from the sublattice and the intrinsic spin orbit splitting in graphene on hexagonal boron-nitride. Employing resistively-detected electron spin resonance, we measure a sublattice splitting of the order of 20E-6 eV, and confirm an intrinsic spin orbit coupling of approximately 45E-6 eV. The dominance of the latter suggests a topologically non-trivial state, involving fascinating properties. Electron spin resonance is a promising route towards unveiling the intriguing band structure at low energy scales.

cond-mat.mes-hall↗

arXiv2009

Spin Relaxation in Isotopically Purified Silicon Quantum Dots

We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isotope $^{29}$Si concentration for which this mechanism become dominant.

cond-mat.mes-hall↗

arXiv2008

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics.

cond-mat.mes-hall↗

arXiv2008

Magnetotransport in non-planar SiGe/Si nanomembranes

We investigate the relationship between electronics and geometry in a nonplanar SiGe/Si resonant quantum cavity (RQC) subject to a magnetic field. The transfer matrix technique originally due to Usuki and coworkers (Phys. Rev. B 52, 8244 1995) has been modified to account for the nonzero local curvature of the RQC. Our results demonstrate that low-temperature ballistic magnetoconductance in nonplanar RQCs is highly sensitive to the changes in curvature for a wide range of magnetic field strengths.

cond-mat.mes-hall↗

arXiv2008

Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots

We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the plane of the dot, the spin-orbit coupling is important and virtual states are not required. We find that there can be strong anisotropy for different field directions: parallel magnetic field can increase substantially the relaxation time due to Zeeman splitting, but when the magnetic field is applied perpendicular to the plane, the enhancement of the spin-orbit effect shortens the relaxation time. We find the relaxation to be orders of magnitude longer than for GaAs quantum dots, due to weaker hyperfine and spin-orbit effects.

cond-mat.other↗

arXiv2007

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.

cond-mat.mes-hall↗

arXiv2005

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.

cond-mat.mes-hall↗

arXiv2004

Periodic Field Emission from an Isolated Nano-Scale Electron Island

We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation reproduces the experimental data and shows deviation from the Fowler-Nordheim description due to the island's electric isolation.

cond-mat.mes-hall↗

arXiv2004

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

cond-mat.mtrl-sci↗

arXiv2003

Pseudo-spin Kondo effect versus hybridized molecular states in parallel Double Quantum Dots

A two quantum-dot device is coupled in parallel for studying the competition between the pseudo-spin Kondo effect and strongly hybridized molecular states. Cryogenic measurements are performed in the regime of weak coupling of the two dots to lead states under linear transport conditions. Detailed simulations verify the finding of the transition between the two different regimes.

cond-mat.mes-hall↗

arXiv2003

Nuclear spin relaxation probed by a single quantum dot

We present measurements on nuclear spin relaxation probed by a single quantum dot in a high-mobility electron gas. Current passing through the dot leads to a spin transfer from the electronic to the nuclear spin system. Applying electron spin resonance the transfer mechanism can directly be tuned. Additionally, the dependence of nuclear spin relaxation on the dot gate voltage is observed. We find electron-nuclear relaxation times of the order of 10 minutes.

cond-mat.mes-hall↗

arXiv2003

Single electron-phonon interaction in a suspended quantum dot phonon cavity

An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy.

cond-mat.mes-hall↗

arXiv2002

Spin blockade in ground state resonance of a quantum dot

We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We support this by probing the bias, magnetic field and temperature dependence of the transport spectrum. Weak violation of the blockade is modelled by detailed calculations of non-linear transport taking into account forbidden transitions.

cond-mat.mes-hall↗

arXiv2001

Superposition of photon- and phonon- assisted tunneling in coupled quantum dots

We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional electron system of an Al$_x$Ga$_{1-x}$As/GaAs heterostructure. Coherent molecular states in the coupled dots are probed by photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as a result of the resonance between the microwave photons and the molecular states. Below 8 GHz, a pronounced superposition of phonon- and photon-assisted tunneling is observed. Coherent superposition of molecular states persists under excitation of acoustic phonons.

cond-mat.mes-hall↗

arXiv2001

Adiabatic steering and determination of dephasing rates in double dot qubits

We propose a scheme to prepare arbitrary superpositions of quantum states in double quantum--dots irradiated by coherent microwave pulses. Solving the equations of motion for the dot density matrix, we find that dephasing rates for such superpositions can be quantitatively infered from additional electron current pulses that appear due to a controllable breakdown of coherent population trapping in the dots.

cond-mat.mes-hall↗

arXiv2000

A nanomechanical resonator shuttling single electrons at radio frequencies

We observe transport of electrons through a metallic island on the tip of a nanomechanical pendulum. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. We explain the I-V curve, which differs from previous theoretical predictions, with model calculations based on a Master equation approach.

cond-mat.mes-hall↗

arXiv2000

Determination of the complex microwave photoconductance of a single quantum dot

A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance resolves photon-assisted tunneling (PAT) in the non-linear regime through the ground state and an excited state as well. The out-of-phase component (susceptance) allows to study charge relaxation within the quantum dot on a time scale comparable to the microwave beat period.

cond-mat.mes-hall↗

arXiv2000

Coherent coupling of two quantum dots embedded in an Aharonov-Bohm ring

We define two laterally gated small quantum dots (~ 15 electrons) in an Aharonov-Bohm geometry in which the coupling between the two dots can be broadly changed. For weakly coupled quantum dots we find Aharonov-Bohm oscillations. In an intermediate coupling regime we concentrate on the molecular states of the double dot and extract the magnetic field dependence of the coherent coupling.

cond-mat.mes-hall↗