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R. H. Miwa

Publications and source records attributed to R. H. Miwa.

At least 19 recordsLinked to original sources

TCNQ self-assembly driven by molecular coverage over borophene monolayers

Boron monolayers, also known as borophene, have recently attracted interest due to their electronic properties, e.g. the facility to form various allotropes with interesting properties. In this work, we investigate the adsorption process of the tetracyanoquinodimethane (TCNQ) on the borophene $β_{12}$ and $χ_3$ using the density functional theory (DFT). We observed that molecules bond to the borophene layer through the van der Waals interaction, where, at the low coverage limit, the binding strength of TCNQ / borophene is comparable to that of TCNQ / WSe$_2$. By increasing the molecular coverage, $10^{13} \rightarrow 10^{14}$ molecules/cm$^{2}$, we found the (exothermic) formation of self-assembled (SA) structures of TCNQ on borophene, where the molecule-molecule interactions rule the SA process. The structural stability of the SA-TCNQ molecule on borophene was verified via ab initio molecular dynamics simulations. Finally, we show that the formation of the vdW interface leads to the tunability of the hole-doping of the borophene layer by an external electric field. We believe that our results bring an important contribution to the atomic-scale understanding of a powerful electron acceptor molecule, TCNQ, adsorbed on a promising 2D material, borophene.

cond-mat.mtrl-sci

Spin-polarized nearly-free electron channels on the Ca$_{2}$N electrenes

Two-dimensional (2D) materials combined with the presence of surface nearly-free electrons (NFE) have been considered quite interesting platforms to be exploited for the development of 2D electronic devices. Further incorporation of foreign elements adds a new degree of freedom to engineer the electronic as well as the magnetic properties of 2D materials. Here we have performed an ab-initio study of Ca$_{2}$N, electrenes fully (i.e., both sides) adsorbed by hydrogen (H/Ca$_{2}$N/H) and fluorine (F/Ca$_{2}$N/F) atoms. The NFE states are suppressed in these systems, followed by the appearance of a net magnetic moment localized in the nitrogen atoms intercalated by the hydrogenated or fluorinated calcium layers. In the sequence, we have proposed lateral heterostructures combining the H/Ca$_{2}$N/H or F/Ca$_{2}$N/F regions with pristine Ca$_{2}$N, electrenes [(Ca$_{2}$N)(X/Ca$_{2}$N/X), with X=H or F]. We found that the magnetic moment of the hydrogenated or fluorinated regions promotes the emergence of spin-polarized NFE states confined along the pristine (Ca$_{2}$N) stripes. Further electronic transport calculations reveal that the (X/Ca$_{2}$N/X) regions act as spin-dependent scattering centers, spin-filters. We believe that these findings make an important contribution to the development of spintronic devices based on 2D electrides.

cond-mat.mtrl-sci

Topological insulating phase arising in transition metal dichalcogenide alloy

Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calculations, we investigate the energetic stability, and the topological transition in Pt(HgxSe1-x)2 as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe2 host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect distribution of Hg. Through a combination of our ab-initio results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only 9%. Our results expand the possible search for non-trivial topological phases in random alloy systems.

cond-mat.mtrl-sci

Magnetic anisotropy energies and metal-insulator transitions in monolayers of $α$-RuCl$_3$ and OsCl$_3$ on graphene

Transition metal thriclorides, with $4d$ or $5d$ electrons, are materials at the forefront of recent studies about the interplay of spin-orbit coupling and strong Coulomb interactions. Within our first-principles calculations (DFT+$U$+SOC) we study the effects of graphene on the electronic and magnetic properties of the monolayers of $α$-RuCl$_3$ and OsCl$_3$. Despite the spatially inhomogeneous $n$-type doping induced by graphene, we show that the occupancy of the upper Hubbard bands of MLs of \rucl and OsCl$_3$ can be tuned through external electric fields, and allows the control of (i) metal-insulator transitions, and (ii) the magnetic easy-axis and anisotropy energies. Our findings point towards the tunning of electronic and magnetic properties of transition metal thriclorides monolayers by using graphene and external electronic fields.

cond-mat.mtrl-sci

Role of the rare-earth doping on the multiferroic properties of BaTiO$_3$: First-principles calculation

Ab-initio spin-polarized Density Functional Theory plus U is used to study the electronic and magnetic properties of tetragonal doped barium titanate (Ba$_{1-x}$Eu$_x$O$_3$) system for different europium (Eu$^{3+}$) concentrations. For this study, the Projector Augmented Wave (PAW) method and a Perdew-Zunger (LSDA) approximation, which has been used for the exchange correlation energy, have been considered taking into account a supercell model. In this model, the spin polarization as well as the Hubbard's potential have been used for the correction of the electron-electron Coulomb interactions in the rare-earth ions partially filled f-orbitals. The electronic bands-structure reveals that the band-gap energy as well as the dielectric properties decreases with the increase of the doping concentration. On the other hand, the modern theory of polarization also shows that the spontaneous electric polarization increases with the increase of the europium content, whereas the states-density reveals ferromagnetic characteristics (with non-zero total magnetization), without an applied magnetic field, for the Ba$_{1-x}$Eu$_x$O$_3$ system. The magnetic properties also reveal to be strongly dependent on the exchange interaction of the strong localized Eu 4f-states in the crystal lattice.

cond-mat.mtrl-sci

Jacutingaite-family: a class of topological materials

Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculations we extensively characterize the energetic stability of this class while showing a common occurrence of the Kane-Mele topological phase. Here we found Pt-based materials surpassing jacutingaite's impressive topological gap and lower exfoliation barrier while retaining its stability.

cond-mat.mtrl-sci

Magnetic and Electronic Switch in Metal Intercalated Two-Dimensional GeP$_3$

Intercalation of foreign atoms in two dimensional hosts has been considered a quite promising route in order to engineer the electronic, and magnetic properties in 2D plataforms. In the present study, we performed a first-principles theoretical investigation of the energetic stability, and the magnetic/electronic properties of 2D GeP$_3$ doped by Cr atoms. Our total energy results reveal the formation of thermodynamically stable Cr doped GeP$_3$ bilayer [(GeP$_3$)$_{BL}$], characterized by interstitial Cr atoms lying in the van der Waals (vdW) gap between (GeP$_3$)$_{BL}$ [(GeP$_3$)$_{BL}^{Cr}$]. We show that the ground state row-wise antiferromagnetic (RW-AFM) phase of (GeP$_3$)$_{BL}^{Cr}$ can be tuned to a ferromagnetic (FM) configuration upon compressive mechanical strain ($\varepsilon$), Cr$^{\uparrow \downarrow} \xrightarrow{\varepsilon}$Cr$^{\uparrow \uparrow}$. By considering its stacked counterparts, (GeP$_3$)$_{BL}^{Cr}$/(GeP$_3$)$_{BL}^{Cr}$, and (GeP$_3$)$_{BL}^{Cr}$/Cr/(GeP$_3$)$_{BL}^{Cr}$, we found that such a magnetic tuning is dictated by a combination of intralayer and interlayer couplings, where the RW-AFM phase change to layer-by-layer FM (Cr$^{\uparrow \uparrow}$//Cr$^{\uparrow \uparrow}$) and AFM (Cr$^{\uparrow \uparrow}$/Cr$^{\downarrow \downarrow}$/Cr$^{\uparrow \uparrow}$) phases, respectively. Further electronic band structure calculations show that these Cr doped systems are metallic, characterized by the emergence of strain induced spin polarized channels at the Fermi level. These findings reveal that the atomic intercalation, indeed, offers a new set of degree of freedom for the design and control the magnetic/electronic properties in 2D systems.

cond-mat.mtrl-sci

Engineering metal-$sp_{xy}$ Dirac bands on the oxidized SiC surface

The ability to construct 2D systems, beyond materials natural formation, enriches the search and control capability of new phenomena. For instance, the synthesis of topological lattices of vacancies on metal surfaces through scanning tunneling microscopy. In the present study we demonstrate that metal atoms encaged in silicate adlayer on silicon carbide is an interesting platform for lattices design, providing a ground to experimentally construct tight-binding models on an insulating substrate. Based on the density functional theory, we have characterized the energetic and the electronic properties of 2D metal lattices embedded in the silica adlayer. We show that the characteristic band structures of those lattices are ruled by surface states induced by the metal-$s$ orbitals coupled by the host-$p_{xy}$ states; giving rise to $sp_{xy}$ Dirac bands neatly lying within the energy gap of the semiconductor substrate.

cond-mat.mtrl-sci

Electronic Stripes and Transport Properties in Borophene Heterostructures

We performed a theoretical investigation of the structural and electronic properties of (i) pristine, and (ii) superlattice structures of borophene. In (i), by combining first-principles calculations, based on the density functional theory (DFT), and simulations of the X-ray Absorption Near-Edge Structure (XANES) we present a comprehensive picture connecting the atomic arrangement of borophene and the X-ray absorption spectra. Once we have characterized the electronic properties of the pristine systems, we next examined the electronic confinement effects in 2D borophene superlattices (BSLs) [(ii)]. Here, the BSL structures were made by attaching laterally two different structural phases of borophene. The energetic stability, and the electronic properties of those BSLs were examined based on total energy DFT calculations. We find a highly anisotropic electronic structure, characterized by the electronic confinement effects, and the formation of metallic channels along the superlattices. Combining DFT and the Landauer-Büttiker formalism, we investigate the electronic transport properties in the BSLs. Our results of the transmission probability reveal that the electronic transport is ruled by π or a combination of π and σ transmission channels, depending on the atomic arrangement and periodicity of the superlattices. Finally we show that there is huge magnification on the directional dependence of the electronic transport properties in BSLs, in comparision with the pristine borophene phase. Those findings indicate that BSLs are quite interesting systems in order to design conductive nanoribbons in a 2D platform.

cond-mat.mtrl-sci

Topological flat band, Dirac fermions and quantum spin Hall phase in 2D Archimedean lattices

Materials with designed properties arises in a synergy between theoretical and experimental approaches. In this study we explore the set of Archimedean lattices forming a guidance to its electronic properties and topological phases. Within these lattices, rich electronic structure emerge forming type-I and II Dirac fermions, topological flat bands and high-degeneracy points with linear and flat dispersions. Employing a tight-binding model, with spin-orbit coupling, we characterize a quantum spin Hall (QSH) phase in all Archimedean lattices. Our discussion is validated within density functional theory calculations, where we show the characteristic bands of the studied lattices arising in 2D carbon allotropes.

cond-mat.mes-hall

Double flat bands in kagome twisted bilayers

We have studied how a generic bilayer kagome lattice behave upon layer rotation. We employed a Tight Binding model with one orbital per site and found (i) for low rotational angles, and at low energies, the same flat bands structure like in twisted bilayer graphene; though, for a larger value of the magic angle. Moreover, (ii) at high energies, due to the superstructure symmetry regions, we found the characteristics three band dispersion of the kagome lattice. In the latter, its band width decreases for lower angles confining them within a few meV. Therefore, we found in twisted kagome lattice the coexistence of two sets of flat bands in different energies and lying in different spatial regions of the bilayer system.

cond-mat.mes-hall

Layertronic control of topological states in multilayer metal-organic frameworks

We investigate the layer localization control of two-dimensional states in multilayer metal-organic frameworks (MOFs). For finite stackings of (NiC4S4)3 MOFs, the weak van der Waals coupling between adjacent layers leads to a Fermi level dependent distribution of the electronic states in the monolayers. Such distribution is reflected in the topological edge states of multilayer nanoribbons. Moreover, by applying an external electric field, parallel to the stacking direction, the spacial localization of the electronic states can be controlled for a chosen Fermi energy. This localization behavior is studied comparing density functional theory calculations with a kagome lattice tight-binding model. Furthermore, for infinite stacked nanoribbons, a new V-gutter Dirac state is found in the side surfaces, which allows anisotropic current control by tuning the Fermi energy. Our results can be immediately extended to other kagome MOFs with eclipsed stackings, introducing a new degree of freedom (layer localization) to materials design.

cond-mat.mes-hall

Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene

The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles calculations and tight binding models. Our results for the magnetic anisotropy energy (MAE) reveal that the out-of-plane (in-plane) magnetization is favored for M = Mn, Fe, and Ru (Co, and Rh). Given the structural symmetry of (MC$_4$S$_4$)$_3$, the QAHE takes place only for M = Mn, Fe and Ru. Such a quantum anomalous Hall phase has been confirmed through the calculation of the Chern number, and examining the formation of topologically protected (metallic) edge states. Further electron ($n$-type) doping of the MOFs has been done in order to place the Fermi level within the non-trivial energy gap; where we find that in (RuC$_4$S$_4$)$_3$, in addition to the up-shift of the Fermi level, the MAE energy increases by 40\%. Finally, we show that in MOF/graphene (vdW) interfaces, the Fermi level tunning can be done with an external electric field, which controls the charge transfer at the MOF/graphene interface, giving rise to switchable topologically protected edge currents in MOFs.

cond-mat.mtrl-sci

Confinement and Fermion Doubling Problem in Dirac-like Hamiltonians

We investigate the interplay between confinement and the fermion doubling problem in Dirac-like Hamiltonians. Individually, both features are well known. First, simple electrostatic gates do not confine electrons due to the Klein tunneling. Second, a typical lattice discretization of the first-order derivative $k \rightarrow -i\partial_x$ skips the central point and allow spurious low-energy, highly oscillating solutions known as fermion doublers. While a no-go theorem states that the doublers cannot be eliminated without artificially breaking a symmetry, here we show that the symmetry broken by the Wilson's mass approach is equivalent to the enforcement of hard-wall boundary conditions, thus making the no-go theorem irrelevant when confinement is foreseen. We illustrate our arguments by calculating the following: (i) the band structure and transport properties across thin films of the topological insulator Bi$_2$Se$_3$, for which we use ab-initio density functional theory calculations to justify the model; and (ii) the band structure of zigzag graphene nanoribbons.

cond-mat.mes-hall

Tuning the topological states in metal-organic bilayers

We have investigated the energetic stability and the electronic properties of metal-organic topological insulators bilayers (BLs), $(MC_4S_4)_3$-BL, with M=Ni and Pt, using first-principles calculations and tight-binding model. Our findings show that $(MC_4S_4)_3$-BL is an appealing platform to perform electronic band structure engineering, based on the topologically protected chiral edge states. The energetic stability of the BLs is ruled by van der Waals interactions; being the AA stacking the energetically most stable one. The electronic band structure is characterized by a combination of bonding and anti-bonding kagome band sets (KBSs), revealing that $(NiC_4S_4)_3$-BL presents a Z$_2$-metallic phase, whereas $(PtC_4S_4)_3$-BL may present both Z$_2$-metallic phase or quantum spin Hall phase. Those non-trivial topological states were confirmed by the formation of chiral edge states in $(MC_4S_4)_3$-BL nanoribbons. We show that the localization of the edge states can be controlled with a normal external electric field, breaking the mirror symmetry. Hence, the sign of electric field selects in which layer each set of edge states are located. Such a control on the (layer) localization, of the topological edge states, bring us an additional and interesting degree of freedom to control the transport properties in layered metal-organic topological insulator.

cond-mat.mtrl-sci

H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study

Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of water molecules at the phosphorene/a-sio2 interface. In (i), we find that the phosphorene sheet bonds to a-sio2 through van der Waals interactions, even upon the presence of oxygen vacancy on the surface. The \slp/a-\sio\ system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-\sio\ substrate. The structural, and the surface-potential corrugations promote the formation of electron-rich and -poor regions on the phosphorene sheet and at the SLP/a-sio2 interface. Such charge density puddles have been strengthened by the presence of oxygen vacancies in a-sio2. In (ii), due to the amorphous structure of the surface, we have considered a number of plausible geometries of water embedded in the SLP/a-sio2 interface. There is an energetic preference to the formation of hydroxyl (OH) groups on the a-sio2 surface. Meanwhile, upon the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we find the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P--O--Si chemical bonds at the SLP/a-sio2 interface. Further x-ray absorption spectra (XAS) simulations have been done, aiming to provide additional structural/electronic informations of the oxygen atoms forming hydroxyl groups or P--O--Si chemical bonds at the interface region.

cond-mat.mes-hall

An ab initio investigation of Bi$_2$Se$_3$ topological insulator deposited on amorphous SiO$_2$

We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi$_2$Se$_3$ quintuple layers (QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i) charge transfer from the TI to the substrate and charge redistribution along the Bi$_2$Se$_3$ QLs, and (ii) by deformation of the QL in contact with the a-SiO$_2$ substrate. We also investigate the role played by oxygen vacancies (V$_O$) on the a-SiO$_2$, which increases the energy splitting between the two Dirac-like cones. Finally, by mapping the electronic structure of Bi$_2$Se$_3$/a-SiO$_2$, we found that the a-SiO$_2$ surface states, even upon the presence of V$_O$, play a minor role on gating the electronic transport properties of Bi$_2$Se$_3$.

cond-mat.mtrl-sci

Metallic nanolines ruled by grain boundaries in graphene: an ab initio study

We have performed an ab initio investigation of the energetic stability, and the electronic properties of transition metals (TMs = Mn, Fe, Co, and Ru) adsorbed on graphene upon the presence of grain boundaries (GBs). Our results reveal an energetic preference for the TMs lying along the GB sites (TM/GB). Such an energetic preference has been strengthened by increasing the concentration of the TM adatoms; giving rise to TM nanolines on graphene ruled by GBs. Further diffusion barrier calculations for Fe adatoms support the formation of those TM nanolines. We find that the energy barriers parallel to the GBs are sligthly lower in comparision with those obtained for the defect free graphene; whereas, perpendicularly to the GBs the Fe adatoms face higher energy barriers. Fe and Co (Mn) nanolines are ferromagnetic (ferrimagnetic), in contrast the magnetic state of Ru nanolines is sensitive to the Ru/GB adsorption geometry. The electronic properties of those TM nanolines were characterized through extensive electronic band structure calculations. The formation of metallic nanolines is mediated by a strong hybridization between the TM and the graphene ($π$) orbitals along the GB sites. Due to the net magnetization of the TM nanolines, our band structure results indicate an anisotropic (spin-polarized) electronic current for some TM/GB systems.

cond-mat.mtrl-sci