arXiv subjects

R. J. Green

Publications and source records attributed to R. J. Green.

18 recordsLinked to original sources

arXiv2026

From perovskite to infinite-layer nickelates: hole concentration from x-ray absorption

The difficulty of determining cation concentrations and oxygen stoichiometry in infinite-layer nickelate thin films has so far prevented clear experimental identification of the nickel electron configuration in the superconducting phase. We used soft x-ray absorption spectroscopy to study the successive changes in PrNiO$_x$ thin films at various intermediate stages of topotactic reduction with $x=2-3$. By comparing the Ni-$L$ edge spectra to single and double cluster ligand-field calculations, we find that none of our samples exhibit a pure $d^9$ configuration. Our quantitative analysis using the charge sum rule shows that even when films are maximally reduced, the averaged number of nickel $3d$ holes is 1.35. Superconducting samples have even higher values, calling into question the previously assumed limit of hole doping. Concomitant changes in the oxygen $K$-edge absorption spectra upon reduction indicate the presence of oxygen $2p$ holes, even in the most reduced films. Overall, our results suggest a complex interplay of hole doping mechanisms resulting from self-doping effects and oxygen non-stoichiometry.

cond-mat.supr-con↗

arXiv2024

Plasmon dispersion in bilayer cuprate superconductors

The essential building blocks of cuprate superconductors are two-dimensional CuO$_2$ sheets interspersed with charge reservoir layers. In bilayer cuprates, two closely spaced CuO$_2$ sheets are separated by a larger distance from the subsequent pair in the next unit cell. In contrast to single-layer cuprates, prior theoretical work on bilayer systems has predicted two distinct acoustic plasmon bands for a given out-of-plane momentum transfer. Here we report random phase approximation (RPA) calculations for bilayer systems which corroborate the existence of two distinct plasmons bands. We find that the intensity of the lower-energy band is negligibly small, whereas the higher-energy band carries significant spectral weight. We also present resonant inelastic x-ray scattering (RIXS) experiments at the O $K$-edge on the bilayer cuprate Y$_{0.85}$Ca$_{0.15}$Ba$_2$Cu$_3$O$_7$ (Ca-YBCO), which show only one dispersive plasmon branch, in agreement with the RPA calculations. In addition, the RPA results indicate that the dispersion of the higher-energy plasmon band in Ca-YBCO is not strictly acoustic, but exhibits a substantial energy gap of approximately 250 meV at the two-dimensional Brillouin zone center.

cond-mat.supr-con↗

arXiv2023

Evolution of plasmon excitations across the phase diagram of the cuprate superconductor La$_{2-x}$Sr$_{x}$CuO$_4$

We use resonant inelastic x-ray scattering (RIXS) at the O $K$- and Cu $K$-edges to investigate the doping- and temperature dependence of low-energy plasmon excitations in La$_{2-x}$Sr$_{x}$CuO$_4$. We observe a monotonic increase of the energy scale of the plasmons with increasing doping $x$ in the underdoped regime, whereas a saturation occurs above optimal doping $x \gtrsim 0.16$ and persists at least up to $x = 0.4$. Furthermore, we find that the plasmon excitations show only a marginal temperature dependence, and possible effects due to the superconducting transition and the onset of strange metal behavior are either absent or below the detection limit of our experiment. Taking into account the strongly correlated character of the cuprates, we show that layered $t$-$J$-$V$ model calculations accurately capture the increase of the plasmon energy in the underdoped regime. However, the computed plasmon energy continues to increase even for doping levels above $x \gtrsim 0.16$, which is distinct from the experimentally observed saturation, and reaches a broad maximum around $x = 0.55$. We discuss whether possible lattice disorder in overdoped samples, a renormalization of the electronic correlation strength at high dopings, or an increasing relevance of non-planar Cu and O orbitals could be responsible for the discrepancy between experiment and theory for doping levels above $x = 0.16$.

cond-mat.supr-con↗

arXiv2021

Intrinsic versus extrinsic orbital and electronic reconstructions at complex oxide interfaces

The interface between the insulators LaAlO$_3$ and SrTiO$_3$ accommodates a two-dimensional electron liquid (2DEL) -- a high mobility electron system exhibiting superconductivity as well as indications of magnetism and correlations. While this flagship oxide heterostructure shows promise for electronics applications, the origin and microscopic properties of the 2DEL remain unclear. The uncertainty remains in part because the electronic structures of such nanoscale buried interfaces are difficult to probe, and is compounded by the variable presence of oxygen vacancies and coexistence of both localized and delocalized charges. These various complications have precluded decisive tests of intrinsic electronic and orbital reconstruction at this interface. Here we overcome prior difficulties by developing an interface analysis based on the inherently interface-sensitive resonant x-ray reflectometry. We discover a high charge density of 0.5 electrons per interfacial unit cell for samples above the critical LaAlO$_3$ thickness, and extract the depth dependence of both the orbital and electronic reconstructions near the buried interface. We find that the majority of the reconstruction phenomena are confined to within 2 unit cells of the interface, and we quantify how oxygen vacancies significantly affect the electronic system. Our results provide strong support for the existence of polarity induced electronic reconstruction, clearly separating its effects from those of oxygen vacancies.

cond-mat.str-el↗

arXiv2020

Evidence for bond-disproportionation in LiNiO2 from x-ray absorption spectroscopy

The electronic structure of LiNiO$_2$, a promising Li-ion battery cathode material, has remained a challenge to understand due to its highly covalent yet correlated nature. Here we elucidate the electronic structure in LiNiO$_2$ and the related compound NaNiO$_2$ using x-ray absorption spectra (XAS) and quantum many-body calculations. Notably, we use inverse partial fluorescence yield to correctly measure the Ni $L$-edge XAS, which is inaccurate using conventional methods. We show that the XAS are indicative of a strong Jahn-Teller effect in NaNiO$_2$ and a bond disproportionated state in LiNiO$_2$, supporting a theory of a high-entropy, glassy disproportionated state that stabilizes charging cycles in LiNiO$_2$.

cond-mat.str-el↗

arXiv2019

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds.

cond-mat.mtrl-sci↗

arXiv2018

Chemical and valence reconstruction at the surface of SmB6 revealed with resonant soft x-ray reflectometry

Samarium hexaboride (SmB$_6$), a Kondo insulator with mixed valence, has recently attracted much attention as a possible host for correlated topological surface states. Here, we use a combination of x-ray absorption and reflectometry techniques, backed up with a theoretical model for the resonant $M_{4,5}$ absorption edge of Sm and photoemission data, to establish laterally averaged chemical and valence depth profiles at the surface of SmB$_6$. We show that upon cleaving, the highly polar (001) surface of SmB$_6$ undergoes substantial chemical and valence reconstruction, resulting in boron termination and a Sm$^{3+}$ dominated sub-surface region. Whereas at room temperature, the reconstruction occurs on a time scale of less than two hours, it takes about 24 hours below 50 K. The boron termination is eventually established, irrespective of the initial termination. Our findings reconcile earlier depth resolved photoemission and scanning tunneling spectroscopy studies performed at different temperatures and are important for better control of polarity and, as a consequence, surface states in this system.

cond-mat.str-el↗

arXiv2017

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

cond-mat.mtrl-sci↗

arXiv2016

Transition from reconstruction towards thin film on the (110) surface of strontium titanate

The surfaces of metal oxides often are reconstructed with a geometry and composition that is considerably different from a simple termination of the bulk. Such structures can also be viewed as ultrathin films, epitaxed on a substrate. Here, the reconstructions of the SrTiO3 (110) surface are studied combining scanning tunneling microscopy, transmission electron diffraction, and X-ray absorption spectroscopy, and analyzed with density functional theory calculations. While SrTiO3 (110) invariably terminates with an overlayer of titania, with increasing density its structure switches from nx1 and 2xn. At the same time the coordination of the Ti atoms changes from a network of corner-sharing tetrahedra to a double layer of edge-shared octahedra with bridging units of octahedrally coordinated strontium. This transition from the nx1 to 2xn reconstructions is a transition from a pseudomorphically stabilized tetrahedral network towards an octahedral titania thin film with stress-relief from octahedral strontia units at the surface.

cond-mat.mtrl-sci↗

arXiv2015

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In$_{1-x}$Fe$_x$)$_2$O$_3$

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In$_2$O$_3$ films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

cond-mat.mtrl-sci↗

arXiv2015

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.

cond-mat.str-el↗

arXiv2014

Electronic Structure of $\textrm{Fe}\textrm{Se}_{1-x}\textrm{Te}_x$ Studied by X-ray Spectroscopy and Density Functional Theory

We study the electronic properties of the $\textrm{Fe}\textrm{Se}_{1-x}\textrm{Te}_x$ system ($x=0$, 0.25, 0.5, 0.75, and 1) from the perspective of X-ray spectroscopy and density functional theory (DFT). The analysis performed on the density of states reveals marked differences in the distribution of the $5p$ states of Te for $x>0$. We think that this finding can be associated with the fact that superconductivity is suppressed in FeTe. Moreover, using resonant inelastic X-ray scattering, we estimate the spin state of our system which can be correlated to the magnetic order. We find that the spin state of the $\textrm{Fe}\textrm{Se}_{1-x}\textrm{Te}_x$ system fluctuates, as a function of $x$, between $S=0$ and $S=2$ with Fe in FeSe in the highest spin state. Finally, our DFT calculations nicely reproduce the X-ray emission spectra performed at the Fe $L$-edge (which probe the occupied states) and suggest that the $\textrm{Fe}\textrm{Se}_{1-x}\textrm{Te}_x$ system can be considered at most as a moderately correlated system.

cond-mat.supr-con↗

arXiv2014

The electronic structure of Co-substituted $\textrm{Fe}\textrm{Se}$ superconductor probed by soft X-ray spectroscopy and density functional theory

We study the crystalline and electronic properties of the $\textrm{Fe}_{1-x}\textrm{Co}_x\textrm{Se}$ system ($x=0$, 0.25, 0.5, 0.75, and 1.0) using X-ray diffraction, X-ray spectroscopy and density functional theory. We show that the introduction of Co $3d$ states in FeSe relaxes the bond strengths and induces a structural transition from tetragonal to hexagonal whose crossover takes place at $x\approx0.38$. This structural transition in turn modifies the magnetic order which can be related to the spin state. Using resonant inelastic X-ray spectroscopy we estimate the spin state of the system; FeSe is found to be in a high spin state (S=2), but Fe is reduced to a low spin state upon Co substitution of $x \le 0.25$, well below the structural transition. Finally, we show evidence that FeSe is a moderately correlated system but the introduction of Co into the host lattice weakens the correlation strength for $x\ge0.25$. These novel findings are important to unravel the mechanisms responsible for the superconducting state in iron-chalcogenide superconductors.

cond-mat.supr-con↗

arXiv2014

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO$_2$

Cobalt and manganese ions are implanted into SiO$_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO$_2$ valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO$_2$ electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

cond-mat.mtrl-sci↗

arXiv2014

Local structure of Fe impurity atoms in ZnO: bulk versus surface

By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-doping in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-doping near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculations performed herein suggest that the most likely defect structure is the single or double substitution of Zn with Fe, although, if additional oxygen is available, then Fe substitution with interstitial oxygen is even more energetically favourable. Furthermore, it is found that ferromagnetic states are energetically unfavourable, and ferromagnetic ordering is likely to be realized only through the formation of a secondary phase (i.e. ZnFe2O4), or codoping with Cu.

cond-mat.mtrl-sci↗

arXiv2014

Structural defects induced by Fe-ion implantation in TiO2

X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe$^{3+}$ are detected on the surface of all doped samples due to oxygen exposure. These experimental findings are compared with density functional theory (DFT) calculations of formation energies for different configurations of structural defects in the implanted TiO$_2$:Fe system. According to our calculations, the clustering of Fe-atoms in TiO$_2$:Fe thin films can be attributed to the formation of combined substitutional and interstitial defects. Further, the differences due to Fe doping in pellet and thin film samples can ultimately be attributed to different surface to volume ratios.

cond-mat.mtrl-sci↗

arXiv2012

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

The electronic structures of Sn and Pb implanted SiO2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb-O and Sn-O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn-O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO2 requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO2. These results help explain the complex processes which take place upon implantation and determine the final products.

cond-mat.mtrl-sci↗

arXiv2012

Effect of 3d-doping on the electronic structure of BaFe2As2

The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni, and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d10 shell. These findings help shed light on why superconductivity can occur in BaFe2As2 doped with Co and Ni but not Cu.

cond-mat.mtrl-sci↗