arXiv subjects

R. J. Haug

Publications and source records attributed to R. J. Haug.

At least 37 records · Page 2Linked to original sources

arXiv2008

Tunable Graphene System with Two Decoupled Monolayers

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nano-meter scale separation between them.

cond-mat.mes-hall↗

arXiv2008

Non-invasive detection of molecular bonds in quantum dots

We performed charge detection on a lateral triple quantum dot with star-like geometry. The setup allows us to interpret the results in terms of two double dots with one common dot. One double dot features weak tunnel coupling and can be understood with atom-like electronic states, the other one is strongly coupled forming molecule-like states. In nonlinear measurements we identified patterns that can be analyzed in terms of the symmetry of tunneling rates. Those patterns strongly depend on the strength of interdot tunnel coupling and are completely different for atomic- or molecule-like coupled quantum dots allowing the non-invasive detection of molecular bonds.

cond-mat.mes-hall↗

arXiv2008

Nanomachining of multilayer graphene using an atomic force microscope

An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining a narrow trench. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. Two theoretical approaches are presented to approximate the measured resistance.

cond-mat.mes-hall↗

arXiv2008

Nanomachining of mesoscopic graphite

An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed.

cond-mat.mes-hall↗

arXiv2007

Two path transport measurements on a triple quantum dot

We present an advanced lateral triple quantum dot made by local anodic oxidation. Three dots are coupled in a starlike geometry with one lead attached to each dot thus allowing for multiple path transport measurements with two dots per path. In addition charge detection is implemented using a quantum point contact. Both in charge measurements as well as in transport we observe clear signatures of states from each dot. Resonances of two dots can be established allowing for serial transport via the corresponding path. Quadruple points with all three dots in resonance are prepared for different electron numbers and analyzed concerning the interplay of the simultaneously measured transport along both paths.

cond-mat.mes-hall↗

arXiv2007

Noise enhancement due to quantum coherence in coupled quantum dots

We show that the intriguing observation of noise enhancement in the charge transport through two vertically coupled quantum dots can be explained by the interplay of quantum coherence and strong Coulomb blockade. We demonstrate that this novel mechanism for super-Poissonian charge transfer is very sensitive to decoherence caused by electron-phonon scattering as inferred from the measured temperature dependence.

cond-mat.mes-hall↗

arXiv2007

Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot.

cond-mat.mes-hall↗

arXiv2006

Specific Heat of a Fractional Quantum Hall System

Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $ν= 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $ν= 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions.

cond-mat.mes-hall↗

arXiv2006

Noise at a Fermi-edge singularity

We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity.

cond-mat.mes-hall↗

arXiv2006

Multiple transitions of the spin configuration in quantum dots

Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect we are able to detect five regions with different spin configurations. Transitions are induced with changing electron numbers.

cond-mat.mes-hall↗

arXiv2006

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.

cond-mat.mes-hall↗

arXiv2006

Transport gap in a nu=1/3 quantum Hall system: a probe for skyrmions

The dependence of the activated gap on magnetic field is studied for the fractional filling factor~1/3. By comparing the experimental results with results from exact diagonalization calculations we are able to identify the excitation of a small antiskyrmion in the low-field regime and a cross-over to spinless excitations at higher magnetic fields. The effect of sample quality is studied. On the side of the theory, comparison between different geometries (torus and sphere) and different sizes is carried out. Under inclusion of Landau level mixing and finite thickness, we obtain a good agreement between calculated energies and experimental results.

cond-mat.mes-hall↗

arXiv2005

Probing a Kondo correlated quantum dot with spin spectroscopy

We investigate Kondo effect and spin blockade observed on a many-electron quantum dot and study the magnetic field dependence. At lower fields a pronounced Kondo effect is found which is replaced by spin blockade at higher fields. In an intermediate regime both effects are visible. We make use of this combined effect to gain information about the internal spin configuration of our quantum dot. We find that the data cannot be explained assuming regular filling of electronic orbitals. Instead spin polarized filling seems to be probable.

cond-mat.mes-hall↗

arXiv2005

Signatures of spin in the n=1/3 Fractional Quantum Hall Effect

The activation gap Delta of the fractional quantum Hall state at constant filling n =1/3 is measured in wide range of perpendicular magnetic field B. Despite the full spin polarization of the incompressible ground state, we observe a sharp crossover between a low-field linear dependence of Delta on B associated to spin texture excitations and a Coulomb-like behavior at large B. From the global gap-reduction we get information about the mobility edges in the fractional quantum Hall regime.

cond-mat.mes-hall↗

arXiv2005

Coupling symmetry of quantum dot states

With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states.

cond-mat.mes-hall↗

arXiv2005

Negative differential conductance in quantum dots in theory and experiment

Experimental results for sequential transport through a lateral quantum dot in the regime of spin blockade induced by spin dependent tunneling are compared with theoretical results obtained by solving a master equation for independent electrons. Orbital and spin effects in electron tunneling in the presence of a perpendicular magnetic field are identified and discussed in terms of the Fock-Darwin spectrum with spin. In the nonlinear regime, a regular pattern of negative differential conductances is observed. Electrical asymmetries in tunnel rates and capacitances must be introduced in order to account for the experimental findings. Fast relaxation of the excited states in the quantum dot have to be assumed, in order to explain the absence of certain structures in the transport spectra.

cond-mat.mes-hall↗

arXiv2005

Tunneling resonances in quantum dots: Coulomb interaction modifies the width

Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-life-time broadening of the quantum dot states and a quantitative comparison of the experimental data with a non-equilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.

cond-mat.mes-hall↗

arXiv2005

Spin noise spectroscopy in GaAs

We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the electron spin relaxation time and the electron Lande g-factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with an unpretentious theory based on Poisson distribution probability.

cond-mat.other↗