arXiv subjects

R. J. Warburton

Publications and source records attributed to R. J. Warburton.

At least 19 recordsLinked to original sources

arXiv2023

MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration

We report on MoSi-based superconducting nanowire single-photon detectors on a gallium arsenide substrate. MoSi deposited on a passivated GaAs surface has the same critical temperature as MoSi deposited on silicon. The critical temperature decreases slightly on depositing MoSi directly on the native oxide of GaAs. Hence, MoSi works well as a thin-film superconductor on GaAs. We propose that the amorphous structure of MoSi ensures compatibility with the GaAs matrix. Superconducting nanowire single-photon detectors (SNSPDs) are fabricated with MoSi on GaAs using a meander-wire design. The SNSPD metrics are very similar to those of devices fabricated with the same procedure on a silicon substrate. We observe a plateau in the response-versus-bias curve signalling a saturated internal quantum efficiency. The plateau remains even at an elevated temperature, 2.2 K, at a wavelength of 980 nm. We achieve a timing jitter of 50 ps and a recovery time of 29 ns. These results point to the promise of integrating MoSi SNSPDs with GaAs photonic circuits.

physics.app-ph↗

arXiv2022

Spectrally stable nitrogen-vacancy centers in diamond formed by carbon implantation into thin microstructures

The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks. Employing photonic structures for maximizing the photon collection efficiency in these applications typically leads to broadened optical linewidths for the emitters, which are commonly created via nitrogen ion implantation. With studies showing that only native nitrogen atoms contribute to optically coherent NVs, a natural conclusion is to either avoid implantation completely, or substitute nitrogen implantation by an alternative approach to vacancy creation. Here, we demonstrate that implantation of carbon ions yields a comparable density of NVs as implantation of nitrogen ions, and that it results in NV populations with narrow optical linewidths and low charge-noise levels even in thin diamond microstructures. We measure a median NV linewidth of 150 MHz for structures thinner than 5 $μ$m, with no trend of increasing linewidths down to the thinnest measured structure of 1.9 $μ$m. We propose a modified NV creation procedure in which the implantation is carried out after instead of before the diamond fabrication processes, and confirm our results in multiple samples implanted with different ion energies and fluences.

quant-ph↗

arXiv2021

Wafer-Scale Epitaxial Modulation of Quantum Dot Density

Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

cond-mat.mtrl-sci↗

arXiv2017

Electric field sensing with a scanning fiber-coupled quantum dot

We demonstrate the application of a fiber-coupled quantum-dot-in-a-tip as a probe for scanning electric field microscopy. We map the out-of-plane component of the electric field induced by a pair of electrodes by measurement of the quantum-confined Stark effect induced on a quantum dot spectral line. Our results are in agreement with finite element simulations of the experiment. Furthermore, we present results from analytic calculations and simulations which are relevant to any electric field sensor embedded in a dielectric tip. In particular, we highlight the impact of the tip geometry on both the resolution and sensitivity.

physics.app-ph↗

arXiv2014

A low-loss, broadband antenna for efficient photon collection from a coherent spin in diamond

We report the creation of a low-loss, broadband optical antenna giving highly directed output from a coherent single spin in the solid-state. The device, the first solid-state realization of a dielectric antenna, is engineered for individual nitrogen vacancy (NV) electronic spins in diamond. We demonstrate a directionality close to 10. The photonic structure preserves the high spin coherence of single crystal diamond (T2>100us). The single photon count rate approaches a MHz facilitating efficient spin readout. We thus demonstrate a key enabling technology for quantum applications such as high-sensitivity magnetometry and long-distance spin entanglement.

cond-mat.mes-hall↗

arXiv2014

Quantum dot opto-mechanics in a fully self-assembled nanowire

We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, this opto-mechanical interaction enables the dynamical tuning of two neighboring QDs into resonance, possibly allowing for emitter-emitter coupling. Both the QDs and the coupling mechanism -- material strain -- are intrinsic to the NW structure and do not depend on any functionalization or external field. Such systems open up the prospect of using QDs to probe and control the mechanical state of a NW, or conversely of making a quantum non-demolition readout of a QD state through a position measurement.

cond-mat.mes-hall↗

arXiv2011

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.

cond-mat.mes-hall↗

arXiv2011

Laser spectroscopy of individual quantum dots charged with a single hole

We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement.

cond-mat.mes-hall↗

arXiv2011

Controlling the Interaction of Electron and Nuclear Spins in a Tunnel-Coupled Quantum Dot

We present a technique for manipulating the nuclear spins and the emission polarization from a single optically active quantum dot. When the quantum dot is tunnel coupled to a Fermi sea, we have discovered a natural cycle in which an electron spin is repeatedly created with resonant optical excitation. The spontaneous emission polarization and the nuclear spin polarization exhibit a bistability. For a sigma(+) pump, the emission switches from sigma(+) to sigma(-) at a particular detuning of the laser. Simultaneously, the nuclear spin polarization switches from positive to negative. Away from the bistability, the nuclear spin polarization can be changed continuously from negative to positive, allowing precise control via the laser wavelength.

cond-mat.mes-hall↗

arXiv2010

Robust quantum dot state preparation via adiabatic passage with frequency-swept optical pulses

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.

cond-mat.mes-hall↗

arXiv2009

Non-invasive probing of random local potential fluctuations in ZnCdSe/ZnSe quantum wells

Temperature dependence and recombination behavior of trapped charge carriers in ZnCdSe/ZnSe multiple quantum wells are investigated employing surface acoustic waves. These weakly perturb the carrier system, but remain highly sensitive even at small conductivities. Using this non-invasive probe we are able to detect persistent photoconductivity minutes after optical excitation. Measurement of exciting photon energies, the temperature dependence and ability to quench the conductivity with energies lower than the bandgap, support the notion of spatial separation of electrons and holes in the wells, due to random local potential fluctuations possibly induced by compositional fluctuations.

cond-mat.mes-hall↗

arXiv2008

Dressed excitonic states and quantum interference in a three-level quantum dot ladder system

We observe dressed states and quantum interference effects in a strongly driven three-level quantum dot ladder system. The effect of a strong coupling field on one dipole transition is measured by a weak probe field on the second dipole transition using differential reflection. When the coupling energy is much larger than both the homoge-neous and inhomogeneous linewidths an Autler-Townes splitting is observed. Striking differences are observed when the transitions resonant with the strong and weak fields are swapped, particularly when the coupling energy is nearly equal to the measured linewidth. This result is attributed to quantum interference: a modest destructive or constructive interference is observed depending on the pump / probe geometry. The data demonstrate that coher-ence of both the bi-exciton and the exciton is maintained in this solid-state system, even under intense illumina-tion, which is crucial for prospects in quantum information processing and non-linear optical devices.

cond-mat.mtrl-sci↗

arXiv2008

Coulomb interactions in single, charged self-assembled quantum dots: radiative lifetime and recombination energy

We present results on the charge dependence of the radiative recombination lifetime, Tau, and the emission energy of excitons confined to single self-assembled InGaAs quantum dots. There are significant dot-to-dot fluctuations in the lifetimes for a particular emission energy. To reach general conclusions, we present the statistical behavior by analyzing data recorded on a large number of individual quantum dots. Exciton charge is controlled with extremely high fidelity through an n-type field effect structure, providing access to the neutral exciton (X0), the biexciton (2X0) and the positively (X1+) and negatively (X1-) charged excitons. We find significant differences in the recombination lifetime of each exciton such that, on average, Tau(X1-) / Tau(X0) = 1.25, Tau(X1+) / Tau(X0) = 1.58 and Tau(2X0) / Tau(X0) = 0.65. We attribute the change in lifetime to significant changes in the single particle hole wave function on charging the dot, an effect more pronounced on charging X0 with a single hole than with a single electron. We verify this interpretation by recasting the experimental data on exciton energies in terms of Coulomb energies. We show directly that the electron-hole Coulomb energy is charge dependent, reducing in value by 5-10% in the presence of an additional electron, and that the electron-electron and hole-hole Coulomb energies are almost equal.

cond-mat.mtrl-sci↗

arXiv2008

Power-law carrier dynamics in semiconductor nanocrystals at nanosecond time scales

We report the observation of power law dynamics on nanosecond to microsecond time scales in the fluorescence decay from semiconductor nanocrystals, and draw a comparison between this behavior and power-law fluorescence blinking from single nanocrystals. The link is supported by comparison of blinking and lifetime data measured simultaneously from the same nanocrystal. Our results reveal that the power law coefficient changes little over the nine decades in time from 10 ns to 10 s, in contrast with the predictions of some diffusion based models of power law behavior.

cond-mat.other↗

arXiv2008

Entanglement on demand through time reordering

Entangled photons can be generated "on demand" in a novel scheme involving unitary time reordering of the photons emitted in a radiative decay cascade. The scheme yields polarization entangled photon pairs, even though prior to reordering the emitted photons carry significant "which path information" and their polarizations are unentangled. This shows that quantum chronology can be manipulated in a way that is lossless and deterministic (unitary). The theory can, in principle, be tested and applied to the biexciton cascade in semiconductor quantum dots.

quant-ph↗

arXiv2007

Absorptive and dispersive optical responses of excitons in a single quantum dot

We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak electromagnetic field coherently scattered by the quantum dot is detected with a cryogenic Fabry-Perot setup by combined differential transmission and reflectivity measurements.

cond-mat.mes-hall↗

arXiv2007

Optically probing the fine structure of a single Mn atom in an InAs quantum dot

We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective spin J=1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of micro-eV, but vanishingly small for electrons.

cond-mat.mtrl-sci↗

arXiv2007

Exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff

We report the observation of strong exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn$_{0.9}$Cd$_{0.1}$Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO$_2$/Ta$_2$O$_5$ mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of $23.6 meV$ at $20 K$; composite evolution of the lower and upper polaritons; and narrowing of the lower polariton linewidth near resonance. The heavy hole exciton oscillator strength per quantum well is also deduced to be $1.78 \times 10^{13} cm^{-2}$.

physics.optics↗