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R. J. Young

Publications and source records attributed to R. J. Young.

15 recordsLinked to original sources

Signing Information in the Quantum Era

Signatures are primarily used as a mark of authenticity, to demonstrate that the sender of a message is who they claim to be. In the current digital age, signatures underpin trust in the vast majority of information that we exchange, particularly on public networks such as the internet. However, schemes for signing digital information which are based on assumptions of computational complexity are facing challenges from advances in mathematics, the capability of computers, and the advent of the quantum era. Here we present a review of digital signature schemes, looking at their origins and where they are under threat. Next, we introduce post-quantum digital schemes, which are being developed with the specific intent of mitigating against threats from quantum algorithms whilst still relying on digital processes and infrastructure. Finally, we review schemes for signing information carried on quantum channels, which promise provable security metrics. Signatures were invented as a practical means of authenticating communications and it is important that the practicality of novel signature schemes is considered carefully, which is kept as a common theme of interest throughout this review.

cs.CR

Anomalous twin boundaries in 2D materials

The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth.

cond-mat.mes-hall

Using Quantum Confinement to Uniquely Identify Devices

Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give unique outputs in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with few resources in simple electronic structures above room temperature.

cond-mat.mtrl-sci

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (100). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1ppb level are needed to achieve high quality quantum well growth.

cond-mat.mtrl-sci

Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite

Graphene is one of the stiffest known materials, with a Young's modulus of 1 TPa, making it an ideal candidate for use as a reinforcement in high-performance composites. However, being a one-atom thick crystalline material, graphene poses several fundamental questions: (1) can decades of research on carbon-based composites be applied to such an ultimately-thin crystalline material? (2) is continuum mechanics used traditionally with composites still valid at the atomic level? (3) how does the matrix interact with the graphene crystals and what kind of theoretical description is appropriate? We have demonstrated unambiguously that stress transfer takes place from the polymer matrix to monolayer graphene, showing that the graphene acts as a reinforcing phase. We have also modeled the behavior using shear-lag theory, showing that graphene monolayer nanocomposites can be analyzed using continuum mechanics. Additionally, we have been able to monitor stress transfer efficiency and breakdown of the graphene/polymer interface.

cond-mat.mtrl-sci

Quantum Memories. A Review based on the European Integrated Project "Qubit Applications (QAP)"

We perform a review of various approaches to the implementation of quantum memories, with an emphasis on activities within the quantum memory sub-project of the EU Integrated Project "Qubit Applications". We begin with a brief overview over different applications for quantum memories and different types of quantum memories. We discuss the most important criteria for assessing quantum memory performance and the most important physical requirements. Then we review the different approaches represented in "Qubit Applications" in some detail. They include solid-state atomic ensembles, NV centers, quantum dots, single atoms, atomic gases and optical phonons in diamond. We compare the different approaches using the discussed criteria.

quant-ph

A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.

cond-mat.mes-hall

A site-controlled quantum dot system offering both high uniformity and spectral purity

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.

cond-mat.mes-hall

Bell-inequality violation with a triggered photon-pair source

Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showing a clear violation, highlighting that a quantum dot entangled photon source is suitable for communication exploiting non-local quantum correlations.

quant-ph

Biphoton interference with a quantum dot entangled light source

We demonstrate optical interferometry beyond the limits imposed by the photon wavelength using 'triggered' entangled photon pairs from a semiconductor quantum dot. Interference fringes of the entangled biphoton state reveals a periodicity half of that obtained with the single photon, and much less than that of the pump laser. High fringe visibility indicates that biphoton interference is less sensitive to decoherence than interference of two sequential single photons. The results suggest that quantum interferometry may be possible using a semiconductor LED-like device.

quant-ph

Coherence of an Entangled Exciton-Photon State

We study the effect of the exciton fine-structure splitting on the polarisation-entanglement of photon pairs produced by the biexciton cascade in a single quantum dot. The entanglement is found to persist despite separations between the intermediate energy levels of up to 4 micro-eV. Measurements demonstrate that entanglement of the photon pair is robust to the dephasing of the intermediate exciton state responsible for the first order coherence time of either single photon. We present a theoretical framework taking into account the effects of spin-scattering, background light and dephasing. We distinguish between the first-order coherence time, and a parameter which we measure for the first time and define as the cross-coherence time.

quant-ph

Controlling the polarisation correlation of photon pairs from a charge-tuneable quantum dot

Correlation between the rectilinear polarisations of the photons emitted from the biexciton decay in a single quantum dot is investigated in a device which allows the charge-state of the dot to be controlled. Optimising emission from the neutral exciton states maximises the operating efficiency of the biexciton decay. This is important for single dot applications such as a triggered source of entangled photons. As the bias on the device is reduced correlation between the two photons is found to fall dramatically as emission from the negatively charged exciton becomes significant. Lifetime measurements demonstrate that electronic spin-scattering is the likely cause.

quant-ph

Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing

Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to in-plane asymmetries. Here we demonstrate that the exciton splitting of an individual dot can be tuned through zero by thermal annealing. Repeated annealing blueshifts the exciton emission line of the dot, accompanied by a reduction and inversion in polarization splitting. Annealing is also demonstrated to control the detuning between the exciton and biexciton transitions in any selected dot.

quant-ph

Inversion of exciton level splitting in quantum dots

The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.

quant-ph

Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots

By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, and has enabled the splitting to be tuned to zero within the resolution of our experiments. Observed behaviour allows us to determine g-factors and exchange splittings for different types of dots.

quant-ph