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R. Jansen

Publications and source records attributed to R. Jansen.

At least 19 recordsLinked to original sources

Atomic Clock Ensemble in Space

The Atomic Clock Ensemble in Space (ACES) mission is developing high performance clocks and links for space to test Einstein's theory of general relativity. From the International Space Station, the ACES payload will distribute a clock signal with fractional frequency stability and accuracy of 1E-16 establishing a worldwide network to compare clocks in space and on the ground. ACES will provide an absolute measurement of Einstein's gravitational redshift, it will search for time variations of fundamental constants, contribute to test topological dark matter models, and perform Standard Model Extension tests. Moreover, the ground clocks connected to the ACES network will be compared over different continents and used to measure geopotential differences at the clock locations. After solving some technical problems, the ACES flight model is now approaching its completion. System tests involving the laser-cooled Cs clock PHARAO, the active H-maser SHM and the on-board frequency comparator FCDP have measured the performance of the clock signal delivered by ACES. The ACES microwave link MWL is currently under test. The single-photon avalanche detector of the optical link ELT has been tested and will now be integrated in the ACES payload. The ACES mission concept, its scientific objectives, and the recent test results are discussed here together with the major milestones that will lead us to the ACES launch.

gr-qc

High temperature spin selectivity in a quantum dot qubit using reservoir spin accumulation

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin initialization and readout. Existing schemes rely on Zeeman splitting or Pauli spin blockade with typical energy scales of 0.1 or 1 meV for electron-based qubits, so that sufficient fidelity is obtained only at temperatures around or below 0.1 or 1 K, respectively. Here we describe a method to achieve high temperature spin selectivity in a quantum dot using a reservoir with a spin accumulation, which deterministically sets the spin of a single electron on the dot. Since spin accumulation as large as 10 meV is achievable in silicon, spin selection with electrically adjustable error rates below $10^{-4}$ is possible even in a liquid He bath at 4 K. Via the reservoir spin accumulation, induced and controlled by a nearby ferromagnet, classical information (magnetization direction) is mapped onto a spin qubit. These features provide the prospect of spin qubit operation at elevated temperatures and connect the worlds of quantum computing and spintronics.

cond-mat.mes-hall

On the observability of individual Population III stars and their stellar-mass black hole accretion disks through cluster caustic transits

Recent near-IR power-spectra and panchromatic Extragalactic Background Light measurements provide upper limits on the near-IR surface brightness (SB>31 mag/arcsec^2) that may come from Pop III stars and accretion disks around resulting stellar-mass black holes (BHs) in the epoch of First Light (z=7-17). Physical parameters for zero metallicity Pop III stars at z>7 can be estimated from MESA stellar evolution models through helium-depletion, and for BH accretion disks from quasar microlensing results and multicolor accretion models. Second-generation stars can form at higher multiplicity, so that BH accretion disks may be fed by Roche-lobe overflow from lower-mass companions in their AGB stage. The near-IR SB constraints can be used to calculate the number of caustic transits behind lensing clusters that JWST and the 25~39 m ground-based telescopes may detect for both Pop III stars and stellar mass BH accretion disks. Because Pop III stars and stellar mass BH accretion disks have sizes of a few x 10^-11 arcsec at z>7, typical caustic magnifications can be mu=10^4~10^5, with rise times of hours and decline times of < 1 year for cluster transverse velocities of v<1000 km/s. Microlensing by intracluster medium objects can modify transit magnifications, and lengthen visibility times. Depending on BH masses, accretion-disk radii and feeding efficiencies, stellar-mass BH accretion-disk caustic transits could outnumber those from Pop III stars. To observe Pop III caustic transits directly may require monitoring 3~30 lensing clusters to AB< 29 mag over a decade or more. Such a program must be started with JWST in Cycle 1, and -- depending on the role of microlensing in the Intra Cluster Light -- should be continued for decades with the GMT and TMT, where JWST and the ground-based telescopes each will play a unique and strongly complementary role.

astro-ph.GA

Populations behind the source-subtracted cosmic infrared background anisotropies

While the upcoming telescopes will reveal correspondingly fainter, more distant galaxies, a question will persist: what more is there that these telescopes cannot see? One answer is the source-subtracted Cosmic Infrared Background (CIB). The CIB is comprised of the collective light from all sources remaining after known, resolved sources are accounted for. Ever-more-sensitive surveys will identify the brightest of these, allowing them to be removed, and - like peeling layers off an onion - reveal deeper layers of the CIB. In this way it is possible to measure the contributions from populations not accessible to direct telescopic observation. Measurement of fluctuations in the source-subtracted CIB, i.e., the spatial power spectrum of the CIB after subtracting resolved sources, provides a robust means of characterizing its faint, and potentially new, populations. Studies over the past 15 years have revealed source-subtracted CIB fluctuations on scales out to ~100' which cannot be explained by extrapolating from known galaxy populations. Moreover, they appear highly coherent with the unresolved Cosmic X-ray Background, hinting at a significant population of accreting black holes among the CIB sources. Characterizing the source-subtracted CIB with high accuracy, and thereby constraining the nature of the new populations, is feasible with upcoming instruments and would produce critically important cosmological information in the next decade. New coextensive deep and wide-area near-infrared, X-ray, and microwave surveys will bring decisive opportunities to examine, with high fidelity, the spatial spectrum and origin of the CIB fluctuations and their cross-correlations with cosmic microwave and X-ray backgrounds, and determine the formation epochs and the nature of the new sources (stellar nucleosynthetic or accreting black holes).

astro-ph.CO

Electromagnetic probes of primordial black holes as dark matter

The LIGO discoveries have rekindled suggestions that primordial black holes (BHs) may constitute part to all of the dark matter (DM) in the Universe. Such suggestions came from 1) the observed merger rate of the BHs, 2) their unusual masses, 3) their low/zero spins, and 4) also from the independently uncovered cosmic infrared background (CIB) fluctuations signal of high amplitude and coherence with unresolved cosmic X-ray background (CXB). Here we summarize the prospects to resolve this important issue with electromagnetic observations using the instruments and tools expected in the 2020's. These prospects appear promising to make significant, and potentially critical, advances. We demonstrate that in the next decade, new space- and ground-borne electromagnetic instruments, combined with concurrent theoretical efforts, should shed critical light on the long-considered link between primordial BHs and DM. Specifically the new data and methodologies under this program will involve: I) Probing with high precision the spatial spectrum of source-subtracted CIB with Euclid and WFIRST, and its coherence with unresolved cosmic X-ray background using eROSITA and Athena, II) Advanced searches for microlensing of Galactic stars by the intervening Galactic Halo BHs with OGLE, Gaia, LSST and WFIRST, III) Supernovae (SNe) lensing in the upcoming surveys with WFIRST, LSST and also potentially with Euclid and JWST, IV) Advanced theoretical work to understand the details of PBH accretion and evolution and their influence on cosmic microwave background (CMB) anisotropies in light of the next generation CMB experiments, V) Better new samples and theoretical understanding involving stability and properties of ultra faint dwarf galaxies, pulsar timing, and cosmological quasar lensing.

astro-ph.CO

Pluto's lower atmosphere and pressure evolution from ground-based stellar occultations, 1988-2016

Context. Pluto's tenuous nitrogen (N2) atmosphere undergoes strong seasonal effects due to high obliquity and orbital eccentricity, and has been recently (July 2015) observed by the New Horizons spacecraft. Goals are (i) construct a well calibrated record of the seasonal evolution of surface pressure on Pluto and (ii) constrain the structure of the lower atmosphere using a central flash observed in 2015. Method: eleven stellar occultations by Pluto observed between 2002 and 2016 are used to retrieve atmospheric profiles (density, pressure, temperature) between $\sim$5 km and $\sim$380 km altitude levels (i.e. pressures from about 10 microbar to 10 nanobar). Results: (i) Pressure has suffered a monotonic increase from 1988 to 2016, that is compared to a seasonal volatile transport model, from which tight constraints on a combination of albedo and emissivity of N2 ice are derived; (ii) A central flash observed on 2015 June 29 is consistent with New Horizons REX profiles, provided that (a) large diurnal temperature variations (not expected by current models) occur over Sputnik Planitia and/or (b) hazes with tangential optical depth of about 0.3 are present at 4-7 km altitude levels and/or (c) the nominal REX density values are overestimated by an implausibly large factor of about 20% and/or (d) higher terrains block part of the flash in the Charon facing hemisphere.

astro-ph.EP

Nonlinear Electrical Spin Conversion in a Biased Ferromagnetic Tunnel Contact

The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that there is no applied bias, as in nonlocal spin detection. It is shown here that in a biased ferromagnetic tunnel contact, spin detection is strongly nonlinear. As a result, the spin-detection efficiency is not equal to the tunnel spin polarization. In silicon-based 4-terminal spin-transport devices, even a small bias (tens of mV) across the Fe/MgO detector contact enhances the spin-detection efficiency to values up to 140 \% (spin extraction bias) or, for spin injection bias, reduces it to almost zero, while, parenthetically, the charge current remains highly spin polarized. Calculations reveal that the nonlinearity originates from the energy dispersion of the tunnel transmission and the resulting nonuniform energy distribution of the tunnel current, offering a route to engineer spin conversion. Taking nonlinear spin detection into account is also shown to explain a multitude of peculiar and puzzling spin signals in structures with a biased detector, including two- and three-terminal devices, and provides a unified, consistent and quantitative description of spin signals in devices with a biased and unbiased detector.

cond-mat.mes-hall

Giant spin accumulation in silicon nonlocal spin-transport devices

Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here, using non-local spin-transport devices with an n-type Si channel and Fe/MgO magnetic tunnel contacts, we demonstrate that it is possible to create a giant spin accumulation in Si, with the spin splitting reaching 13 meV at 10 K and 3.5 meV at room temperature. The non-local spin signals are in good agreement with a numerical evaluation of spin injection and diffusion that explicitly takes the size of the injector contact into account. The giant spin accumulation originates from the large tunnel spin polarization of the Fe/MgO contacts (53 % at 10 K and 18 % at 300 K), and the spin density enhancement achieved by using a spin injector with a size comparable to the spin-diffusion length of the Si. The ability to induce a giant spin accumulation enables the development of Si spintronic devices with a large magnetic response.

cond-mat.mes-hall

Pluto's atmosphere from the 29 June 2015 ground-based stellar occultation at the time of the New Horizons flyby

We present results from a multi-chord Pluto stellar occultation observed on 29 June 2015 from New Zealand and Australia. This occurred only two weeks before the NASA New Horizons flyby of the Pluto system and serves as a useful comparison between ground-based and space results. We find that Pluto's atmosphere is still expanding, with a significant pressure increase of 5$\pm$2\% since 2013 and a factor of almost three since 1988. This trend rules out, as of today, an atmospheric collapse associated with Pluto's recession from the Sun. A central flash, a rare occurrence, was observed from several sites in New Zealand. The flash shape and amplitude are compatible with a spherical and transparent atmospheric layer of roughly 3~km in thickness whose base lies at about 4~km above Pluto's surface, and where an average thermal gradient of about 5 K~km$^{-1}$ prevails. We discuss the possibility that small departures between the observed and modeled flash are caused by local topographic features (mountains) along Pluto's limb that block the stellar light. Finally, using two possible temperature profiles, and extrapolating our pressure profile from our deepest accessible level down to the surface, we obtain a possible range of 11.9-13.7~$\mu$bar for the surface pressure.

astro-ph.EP

Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier

Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation and spin precession are observed up to 200 K. Strikingly, the observed spin voltage is several orders of magnitude larger than predicted by the theory of spin injection and diffusive spin transport. Since the devices have no oxide tunnel barrier, the discrepancy between theory and experiments cannot be explained by the often-invoked spin accumulation in localized states associated with the oxide or oxide/semiconductor interface. The observed spin voltages therefore must originate from the Ge itself, either from spins in the Ge bulk bands or its depletion region.

cond-mat.mes-hall

Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact

The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is small, the expression for the spin voltage is identical to that of linear transport. However, if the spin accumulation is comparable to the characteristic energy scale that governs the degree of non-linearity, the spin detection sensitivity and the spin voltage are notably reduced. Moreover, the non-linearity enhances the back-flow of spins into the ferromagnet and its detrimental effect on the injected spin current, and the contact resistance required to avoid back-flow is larger than for linear transport. It is also shown that by virtue of the non-linearity, a non-magnetic metal contact can be used to electrically detect spin accumulation in a semiconductor.

cond-mat.mes-hall

Spin heat accumulation induced by tunneling from a ferromagnet

An electric current from a ferromagnet into a non-magnetic material can induce a spin-dependent electron temperature. Here it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the non-magnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

cond-mat.mes-hall

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies with the thickness of the tunnel oxide. An extensive set of spin-transport data for Si and Ge magnetic tunnel devices reveals a scaling with the tunnel resistance that violates the core feature of available theories, namely, the linear proportionality of the spin voltage to the injected spin current density. Instead, an anomalous scaling of the spin signal with the tunnel resistance is observed, following a power-law with an exponent between 0.75 and 1 over 6 decades. The scaling extends to tunnel resistance values larger than 10$^{9}$ $Ωμm^2$, far beyond the regime where the classical impedance mismatch plays a role. This scaling is incompatible with existing theory for direct tunnel injection of spins into the semiconductor. It also demonstrates conclusively that the large spin signal does not originate from two-step tunneling via localized states near the oxide/semiconductor interface. Control experiments on devices with a non-magnetic metal (Ru) electrode, instead of the semiconductor, exhibit no Hanle spin signal, showing that spin accumulation in localized states within the tunnel barrier is also not responsible. Control devices in which the spin current is removed by inserting a non-magnetic interlayer exhibit no Hanle signals either, proving that the spin signals observed in the standard devices are genuine and originate from spin-polarized tunneling and the resulting spin accumulation. Altogether, the scaling results suggest that the spin signal is proportional to the applied bias voltage, rather than the (spin) current.

cond-mat.mes-hall

Injection and detection of spin in a semiconductor by tunneling via interface states

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in itself, but in parallel with direct tunneling. The spin accumulation induced in the semiconductor channel is not suppressed, as previously argued, but genuinely enhanced by the additional spin current via interface states. Spin detection with a ferromagnetic contact yields a weighted average of the spin accumulation in the channel and in the localized states. In the regime where the spin accumulation in the localized states is much larger than that in the channel, the detected spin signal is insensitive to the spin accumulation in the localized states and the ferromagnet probes the spin accumulation in the semiconductor channel.

cond-mat.mes-hall

Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.

cond-mat.mes-hall

Thermal spin current and magnetothermopower by Seebeck spin tunneling

The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of spin-angular momentum across a tunnel barrier without a charge tunnel current. In ferromagnet/insulator/semiconductor tunnel junctions this can be used to induce a spin accumulation (Δμ) in the semiconductor in response to a temperature difference (ΔT) between the electrodes. A phenomenological framework is presented to describe the thermal spin transport in terms of parameters that can be obtained from experiment or theory. Key ingredients are a spin-polarized thermoelectric tunnel conductance and a tunnel spin polarization with non-zero energy derivative, resulting in different Seebeck tunnel coefficients for majority and minority spin electrons. We evaluate the thermal spin current, the induced spin accumulation and Δμ/ΔT, discuss limiting regimes, and compare thermal and electrical flow of spin across a tunnel barrier. A salient feature is that the thermally-induced spin accumulation is maximal for smaller tunnel resistance, in contrast to the electrically-induced spin accumulation that suffers from the impedance mismatch between a ferromagnetic metal and a semiconductor. The thermally-induced spin accumulation produces an additional thermovoltage proportional to Δμ, which can significantly enhance the conventional charge thermopower. Owing to the Hanle effect, the thermopower can also be manipulated with a magnetic field, producing a Hanle magnetothermopower.

cond-mat.mes-hall

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.

cond-mat.mes-hall

Spin injection and perpendicular spin transport in graphite nanostructures

Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the direction perpendicular to the weakly bonded graphene sheets. We achieve injection of highly (75%) spin-polarized electrons into graphite nanostructures of 300-500 nm across and up to 17 nm thick, and observe transport without any measurable loss of spin information. Direct visualization of local spin transport in graphite-based spin-valve sandwiches also shows spatially uniform and near-unity transmission for electrons at 1.8 eV above the Fermi level.

cond-mat.mes-hall