arXiv subjects

R. Joynt

Publications and source records attributed to R. Joynt.

17 recordsLinked to original sources

arXiv2014

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples.

cond-mat.mes-hall↗

arXiv2011

Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being low-Z, are better suited for spintronics applications. This leads to predictions of spin lifetimes in w-AlN exceeding 2 ms at helium temperatures and, relevant to spintronic devices, spin lifetimes up to 0.5 $μs$ at room temperature.

cond-mat.mes-hall↗

arXiv2010

Tunable spin-selective loading of a silicon spin qubit

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

cond-mat.mes-hall↗

arXiv2010

Theory of Electron Spin Relaxation in n-Doped Quantum Wells

Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin relaxation times in GaAs and CdTe quantum wells.

cond-mat.mes-hall↗

arXiv2009

Spin-orbit splittings in Si/SiGe quantum wells

We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic modeling tool, NEMO-3D. We describe the relevant parameters as a function of applied electric field and well width in our numerical simulations. For a silicon membrane, we find the bulk Rashba parameter to be linear in field, $α= α^1E_z$ with $α^1 \simeq 2\times$ 10 $^{-5}$nm$^{-2}$. The dominant contribution to the spin-orbit splitting is from Dresselhaus-type terms, and the magnitude for a typical flat SiGe/Si/SiGe quantum well can be as high as 1$μ$eV.

cond-mat.mes-hall↗

arXiv2009

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.

cond-mat.mes-hall↗

arXiv2009

Spin Relaxation in Isotopically Purified Silicon Quantum Dots

We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isotope $^{29}$Si concentration for which this mechanism become dominant.

cond-mat.mes-hall↗

arXiv2009

Theory of Electron Spin Relaxation in ZnO

Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $τ_{s}$ has been measured by optical orientation experiments, and it shows a surprising non-monotonic behavior with temperature. We explain this behavior by invoking spin exchange between localized and extended states. Interestingly, the effects of spin-orbit coupling are by no means negligible, in spite of the relatively small valence band splitting. This is due to the wurtzite crystal structure of ZnO. Detailed analysis allows us to characterize the impurity binding energies and densities, showing that optical orientation experiments can be used as a characterization tool for semiconductor samples.

cond-mat.mtrl-sci↗

arXiv2008

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics.

cond-mat.mes-hall↗

arXiv2008

Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots

We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the plane of the dot, the spin-orbit coupling is important and virtual states are not required. We find that there can be strong anisotropy for different field directions: parallel magnetic field can increase substantially the relaxation time due to Zeeman splitting, but when the magnetic field is applied perpendicular to the plane, the enhancement of the spin-orbit effect shortens the relaxation time. We find the relaxation to be orders of magnitude longer than for GaAs quantum dots, due to weaker hyperfine and spin-orbit effects.

cond-mat.other↗

arXiv2004

Theory of Optical Orientation in n-Type Semiconductors

Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday rotation and time-resolved Kerr rotation the evolution of the magnetization can be followed as a function of temperature, applied field, doping level and excitation level. We present a theory for the spin relaxation in n-GaAs based on a set of rate equations for two interacting thermalized subsystems of spins: localized states on donor sites and itinerant states in the conduction band. The conduction band spins relax by scattering from defects or phonons through the D'yakonov-Perel' mechanism, while the localized spins relax by interacting with phonons (when in an applied field) or through the Dzyaloshinskii-Moriya interaction. In this model, numerous features of the data, including puzzling temperature and doping dependences of the relaxation time, find an explanation.

cond-mat.mtrl-sci↗

arXiv2002

A Relativistic Mean Field Model for Entrainment in General Relativistic Superfluid Neutron Stars

General relativistic superfluid neutron stars have a significantly more intricate dynamics than their ordinary fluid counterparts. Superfluidity allows different superfluid (and superconducting) species of particles to have independent fluid flows, a consequence of which is that the fluid equations of motion contain as many fluid element velocities as superfluid species. Whenever the particles of one superfluid interact with those of another, the momentum of each superfluid will be a linear combination of both superfluid velocities. This leads to the so-called entrainment effect whereby the motion of one superfluid will induce a momentum in the other superfluid. We have constructed a fully relativistic model for entrainment between superfluid neutrons and superconducting protons using a relativistic $σ- ω$ mean field model for the nucleons and their interactions. In this context there are two notions of ``relativistic'': relativistic motion of the individual nucleons with respect to a local region of the star (i.e. a fluid element containing, say, an Avogadro's number of particles), and the motion of fluid elements with respect to the rest of the star. While it is the case that the fluid elements will typically maintain average speeds at a fraction of that of light, the supranuclear densities in the core of a neutron star can make the nucleons themselves have quite high average speeds within each fluid element. The formalism is applied to the problem of slowly-rotating superfluid neutron star configurations, a distinguishing characteristic being that the neutrons can rotate at a rate different from that of the protons.

gr-qc↗

arXiv2001

Transport and the Order Parameter of Superconducting UPt3

We calculate the ultrasonic absorption and the thermal conductivity in the superconducting state of UPt$_{3}$ as functions of temperature and direction of propagation and polarization. Two leading candidates for the superconducting order parameter are considered: the $E_{1g}$ and $E_{2u}$ representations. Both can fit the data except for the ultrasonic absorption in the $A$ phase. To do that, it is necessary to suppose that the system has only a single domain, and that must be chosen as the most favorable one. However, the $E_{2u}$ theory requires fine-tuning of parameters to fit the low temperature thermal conductivity. Thus, transport data favor the $E_{1g}$ theory. Measurements of the thermal conductivity as a function of pressure at low temperature could help to further distinguish the two theories.

cond-mat.supr-con↗

arXiv2001

Transport and the Order Parameter of Superconducting Sr$_2$RuO$_4$

Recent experiments make it appear more likely that the order parameter of the unconventional superconductor Sr$_2$RuO$_4$ has a spin-triplet $f$-wave symmetry. We study ultrasonic absorption and thermal conductivity of superconducting Sr$_2$RuO$_4$ and fit to the recent data for various $f$-wave candidates. It is shown that only $f_{x^2-y^2}$-wave symmetry can account qualitatively for the transport data.

cond-mat.supr-con↗

arXiv1996

Ginzburg-Landau Theory of Josephson Field Effect Transistors

A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data on JoFETs made by the hole-overdoped Ca-SBCO bicrystal junctions (three terminal devices). The measurements showed a large modulation of the critical current as a function of the applied voltage due to charge modulation in the bicrystal junction. The experimental data agree with the solutions of the theoretical model. This provides an explanation of the large field effect, based on the strong suppresion of the carrier density near the grain boundary junction in the absence of applied field and the subsequent modulation of the density by the field.

supr-con↗

arXiv1995

Mixed symmetry superconductivity in two-dimensional Fermi liquids

We consider a 2D isotropic Fermi liquid with attraction in both $s$ and $d$ channels and examine the possibility of a superconducting state with mixed $s$ and $d$ symmetry of the gap function. We show that both in the weak coupling limit and at strong coupling, a mixed $s+id$ symmetry state is realized in a certain range of interaction. Phase transitions between the mixed and the pure symmetry states are second order. We also show that there is no stable mixed $s+d$ symmetry state at any coupling.

cond-mat↗

arXiv1995

Temperature dependent gap anisotropy in Bi$_{2}$Sr$_{2}$CaCu$_{2}$ O$_{8+x}$ as evidence for a mixed-symmetry ground state

In a recent experiment, Ma et al. measured the temperature dependence of the gap anisotropy of oxygen-annealed Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$. Their measurements were taken along the two directions $Γ- M$ and $Γ- X$. They found that the gap along both directions is nonzero at low temperatures and that the ratio is strongly temperature dependent. We show, using Ginzburg-Landau theory, that this behavior can be obtained if one assumes the existence of s-wave and d-wave components for the order parameter. Our theory predicts orthorhombic anisotropy in the gap and anomalous behavior for the electronic specific heat below T$_c$.

cond-mat↗