arXiv subjects

R. Mathieu

Publications and source records attributed to R. Mathieu.

At least 73 records · Page 4Linked to original sources

arXiv2004

Photoemission studies of the annealing induced modifications of (Ga,Mn)As

Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments

cond-mat.mtrl-sci↗

arXiv2003

Anomalous Hall Effect and Magnetic Monopoles in Momentum-Space

Efforts to find the magnetic monopole in real space have been made in cosmic rays and in accelerators, but up to now there is no firm evidence for its existence due to the very heavy mass $\sim 10^{16}$GeV. However, we show that the magnetic monopole can appear in the crystal-momentum space of solids in the accessible low energy region ($\sim0.1-1$eV) in the context of the anomalous Hall effect. We report experimental results together with first-principles calculations on the ferromagnetic crystal SrRuO$_3$ that provide evidence for the magnetic monopole in the crystal-momentum space.

cond-mat.str-el↗

arXiv2003

Magnetization of ultrathin (Ga,Mn)As layers

Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 Å) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 Å) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary Ion Mass Spectrometry (SIMS) experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.

cond-mat.mtrl-sci↗

arXiv2002

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.

cond-mat.mtrl-sci↗

arXiv2002

Photoemission studies of Ga$_{1-x}$Mn$_{x}$As: Mn-concentration dependent properties

Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in Ga$_{1-x}$Mn$_{x}$As with Mn concentrations in the range 1--6%. We find that the Mn-induced changes in the valence-band spectra depend strongly on the Mn concentration, suggesting that the interaction between the Mn ions is more complex than assumed in earlier studies. The relative position of the Fermi level is also found to be concentration-dependent. In particular we find that for concentrations around 3.5--5% it is located very close to the valence-band maximum, which is in the range where metallic conductivity has been reported in earlier studies. For concentration outside this range, larger as well as smaller, the Fermi level is found to be pinned at about 0.15 eV higher energy.

cond-mat.mtrl-sci↗

arXiv2002

Strong rejuvenation in a chiral-glass superconductor

The glassy paramagnetic Meissner phase of a Bi$_2$Sr$_2$CaCu$_2$O$_x$ superconductor ($x$ = 8.18) is investigated by squid magnetometry, using ``dc-memory'' experiments employed earlier to study spin glasses. The temperature dependence of the zero-field-cooled and thermo-remanent magnetization is recorded on re-heating after specific cooling protocols, in which single or multiple halts are performed at constant temperatures. The 'spin' states equilibrated during the halts are retrieved on re-heating. The observed memory and rejuvenation effects are similar to those observed in Heisenberg-like spin glasses.

cond-mat.mtrl-sci↗

arXiv2002

Fe/V and Fe/Co (001) superlattices: growth, anisotropy, magnetisation and magnetoresistance

Some physical properties of bcc Fe/V and Fe/Co (001) superlattices are reviewed. The dependence of the magnetic anisotropy on the in-plane strain introduced by the lattice mismatch between Fe and V is measured and compared to a theoretical derivation. The dependence of the magnetic anisotropy (and saturation magnetisation) on the layer thickness ratio Fe/Co is measured and a value for the anisotropy of bcc Co is derived from extrapolation. The interlayer exchange coupling of Fe/V superlattices is studied as a function of the layer thickness V (constant Fe thickness) and layer thickness of Fe (constant V thickness). A region of antiferromagnetic coupling and GMR is found for V thicknesses 12-14 monolayers. However, surprisingly, a 'cutoff' of the antiferromagnetic coupling and GMR is found when the iron layer thickness exceeds about 10 monolayers.

cond-mat.mtrl-sci↗

arXiv2002

Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs nonmagnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.

cond-mat.mtrl-sci↗

arXiv2002

Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices

Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers.

cond-mat.mtrl-sci↗

arXiv2001

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 Å) and thick (above 50 Å) GaMnAs layers.

cond-mat.mtrl-sci↗

arXiv2001

Cooling rate dependence of the antiferromagnetic domain structure of a single crystalline charge ordered manganite

The low temperature phase of single crystals of Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ and Gd$_{0.5}$Ca$_{0.5}$MnO$_3$ manganites is investigated by squid magnetometry. Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ undergoes a charge-ordering transition at $T_{CO}$=245K, and a long range CE-type antiferromagnetic state is established at $T_N$=145K. The dc-magnetization shows a cooling rate dependence below $T_N$, associated with a weak spontaneous moment. The associated excess magnetization is related to uncompensated spins in the CE-type antiferromagnetic structure, and to the presence in this state of fully orbital ordered regions separated by orbital domain walls. The observed cooling rate dependence is interpreted to be a consequence of the rearrangement of the orbital domain state induced by the large structural changes occurring upon cooling.

cond-mat.mtrl-sci↗

arXiv2001

Interlayer exchange coupling and giant magnetoresistance in Fe/V (001) superlattices

Magnetization and magnetoresistivity studies of Fe/V (001) superlattices are reported. The first giant magnetoresistance peak with respect to the vanadium and iron layer thicknesses is investigated. The interlayer antiferromagnetic coupling strength is found to show a peak at a vanadium layer thickness of 13 atomic monolayers ($\approx$ 20 Å) with a full width at half maximum of about 2 monolayers. The antiferromagnetic coupling shows a maximum at an iron layer thickness of about 6 monolayers ($\approx$ 9 Å) for series of superlattices with vanadium thicknesses around 13 monolayers. The magnitude of the giant magnetoresistance shows a similar variation as the antiferromagnetic coupling strength.

cond-mat.mtrl-sci↗

arXiv2001

Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3

Transport properties of an epitaxial film of La_0.7Sr_0.3MnO_3 (LSMO), deposited epitaxially on a LaAlO_3 bi-crystal substrate having a misorientation angle of 9.2 deg., have been studied. The film was patterned into a meander containing 100 grain boundaries. The resistivity of the sample exhibits two components; one originating from the grain boundary regions, and one from the LSMO elements in the meander; the latter contribution is similar to the resistivity of a reference epitaxial LSMO film. The low (<0.5 T) and high (up to 6 T) field magnetoresistance was also studied. The meander show a large low field magnetoresistance, increasing with decreasing temperature, and a constant high field slope of the magnetoconductance, results that are well explained by a two-step spin polarized tunneling model.

cond-mat.mtrl-sci↗

arXiv2001

Memory and chaos in an Ising spin glass

The non-equilibrium dynamics of the model 3d-Ising spin glass - Fe$_{0.55}$Mn$_{0.45}$TiO$_3$ - has been investigated from the temperature and time dependence of the zero field cooled magnetization recorded under certain thermal protocols. The results manifest chaos, rejuvenation and memory features of the equilibrating spin configuration that are very similar to those observed in corresponding studies of the archetypal RKKY spin glass Ag(Mn). The sample is rapidly cooled in zero magnetic field, and the magnetization recorded on re-heating. When a stop at constant temperature $T_s$ is made during the cooling, the system evolves toward its equilibrium state at this temperature. The equilibrated state established during the stop becomes frozen in on further cooling and is retrieved on re-heating. The memory of the aging at $T_s$ is not affected by a second stop at a lower temperature $T'_s$. Reciprocally, the first equilibration at $T_s$ has no influence on the relaxation at $T'_s$, as expected within the droplet model for domain growth in a chaotic landscape.

cond-mat.mtrl-sci↗

arXiv2001

Structural and magnetic properties of GaMnAs layers with high Mn content grown by Migration Enhanced Epitaxy on GaAs(100) substrates

We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As condensation. Secondary ion mass spectroscopy and X-ray diffraction measurements confirmed a higher Mn content in the films grown by this method in comparison to the GaMnAs layers grown by low temperature molecular beam epitaxy. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.9 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition dependent density of point defects. It is stressed that this effect must be taken into account for any assessment of Mn content from X-ray diffraction data. Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.5% is broken. We tentatively assign this to the variation of the carrier concentration, including contributions from donor and acceptor centers formed by antisite defects and Mn doping, and increased density of magnetically active Mn ions.

cond-mat.mtrl-sci↗

arXiv2000

Memory and superposition in a spin glass

Non-equilibrium dynamics in a Ag(Mn) spin glass are investigated by measurements of the temperature dependence of the remanent magnetisation. Using specific cooling protocols before recording the thermo- or isothermal remanent magnetisations on re-heating, it is found that the measured curves effectively disclose non-equilibrium spin glass characteristics such as ageing and memory phenomena as well as an extended validity of the superposition principle for the relaxation. The usefulness of this "simple" dc-method is discussed, as well as its applicability to other disordered magnetic systems.

cond-mat.mtrl-sci↗

arXiv2000

Short range ferromagnetism and spin glass state in $\mathrm{Y_{0.7}Ca_{0.3}MnO_{3}}$

Dynamic magnetic properties of $\mathrm{Y_{0.7}Ca_{0.3}MnO_{3}}$ are reported. The system appears to attain local ferromagnetic order at $T_{\mathrm{SRF}} \approx 70$ K. Below this temperature the low field magnetization becomes history dependent, i.e. the zero field cooled (ZFC) and field cooled (FC) magnetization deviate from each other and closely logarithmic relaxation appears at our experimental time scales (0.3-$10^{4}$ sec). The zero field cooled magnetization has a maximum at $T_{\mathrm{f}}\approx 30$ K, whereas the field cooled magnetization continues to increase, although less sharply, also below this temperature. Surprisingly, the dynamics of the system shows non-equilibrium spin glass (SG) features not only below the maximum in the ZFC magnetization, but also in the temperature region between this maximum and $T_{\mathrm{SRF}}$. The aging and temperature cycling experiments show only quantitative differences in the dynamic behavior above and below the maximum in the ZFC-magnetization; similarly, memory effects are observed in both temperature regions. We attribute the high temperature behavior to the existence of clusters of short range ferromagnetic order below $T_{\mathrm{SRF}}$; the configuration evolves into a conventional spin glass state at temperatures below $T_{\mathrm{f}}$.

cond-mat.mtrl-sci↗

arXiv2000

Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$

The low field magnetotransport of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) films grown on SrTiO$_3$ substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO$_2$ display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit i) a low temperature tail in the low field magnetoresistance; ii) a magnetoconductance with a constant high field slope; and iii) a comparably large AMR effect. A model based on a two-step tunneling process, including spin-flip tunneling, is discussed and shown to be consistent with the experimental findings of the bi-epitaxial films.

cond-mat.mtrl-sci↗