arXiv subjects

R. O. Cunha

Publications and source records attributed to R. O. Cunha.

3 recordsLinked to original sources

arXiv2026

Phase-selective orbital-charge conversion in $\mathrm{MoTe_2}$

Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising materials for spin--orbitronics owing to their strong spin--orbit coupling and rich electronic phases. However, their orbital transport properties remain largely unexplored. Here, we demonstrate that the orbitronic response of $\mathrm{MoTe_2}$ is governed by a thickness-driven structural phase transition. RF-sputtered $\mathrm{MoTe_2}$ thin films exhibit a crossover at a critical thickness of approximately $4.5\,\mathrm{nm}$, stabilizing in the metallic $1T^\prime$ phase below this threshold and in the semiconducting $2H$ phase above it. Raman spectroscopy and scanning tunneling spectroscopy (STS) confirm the structural and electronic transition, revealing gapless behavior in ultrathin films and a finite band gap in thicker samples. Spin-pumping measurements detect an additional transverse charge-conversion signal exclusively in metallic $1T^\prime$-$\mathrm{MoTe_2}$, in agreement with first-principles calculations that identify a dominant orbital Rashba--Edelstein response as the underlying conversion mechanism.

cond-mat.mtrl-sci↗

arXiv2022

Efficient spin-to-charge interconversion in Weyl semimetal TaP at room temperature

In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pumping effect (SPE) from microwave-driven ferromagnetic resonance and are detected by a dc voltage along the TaP crystal, at room temperature. We observe a field-symmetric voltage signal without the contamination of asymmetrical lines due to spin rectification effects observed in studies using metallic ferromagnets. The observed voltage is attributed to spin-to-charge current conversion based on the IREE, made possible by the spin-orbit coupling induced intrinsically by the bulk band structure of Weyl semimetals. The measured IREE coefficient $λ_{IREE}=(0.30 \pm{0.01})$ nm is two orders of magnitude larger than in graphene and is comparable to or larger than the values reported for some metallic interfaces and for several topological insulators.

cond-mat.mes-hall↗

arXiv2020

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pumping process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\leq|λ_{IREE}|\leq$ 2.2 pm. These results support the fact that the surface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices with fast and efficient spin-charge conversion.

cond-mat.mes-hall↗