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R. Patti

Publications and source records attributed to R. Patti.

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Solid State Detectors and Tracking for Snowmass

Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03).

physics.ins-det

Integration and Packaging

Vertically integrated (3D) combinations of sensors and electronics provide the ability to fabricate small, fine pitch pixels with very small total capacitance monolithically integrated with complex circuitry. The small capacitance, enabled by the fine pixel pitch and low interconnect capacitance available in 3D hybrid bonding, provides excellent signal/noise with moderate power. This combination enables fabrication of integrated sensors and electronics with both excellent position and time resolution. In this white paper a discussion will be presented on 3D integration advantages, ongoing projects and prospects in high energy physics and beyond.

hep-ex

200 mm Sensor Development Using Bonded Wafers

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $\> 200\ m^2$ for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than $200\ m^2$ of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than $600\ m^2$. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on $200 mm$ wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.

physics.ins-det