arXiv subjects

R. S. Sundaram

Publications and source records attributed to R. S. Sundaram.

3 recordsLinked to original sources

arXiv2013

Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector

We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.

cond-mat.mtrl-sci↗

arXiv2012

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

cond-mat.mes-hall↗

arXiv2012

2μm Solid-State Laser Mode-locked By Single-Layer Graphene

We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.

cond-mat.mes-hall↗