arXiv subjects

R. Sankar

Publications and source records attributed to R. Sankar.

60 records · Page 4Linked to original sources

arXiv2013

THz Generation and Detection on Dirac Fermions in Topological Insulators

This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.

cond-mat.mes-hall↗

arXiv2013

Plasmons dispersion and nonvertical interband transitions in single-crystal Bi2Se3 investigated by electron energy loss spectroscopy

Plasmons dispersion and nonvertical interband transitions in Bi2Se3 single crystals were investigated by electron energy-loss spectroscopy in conjunction with (scanning) transmission electron microscopy, (S)TEM-EELS. Both volume plasmons (π plasmon at 7 eV and π+σ plasmon at 17 eV) and surface plasmons (~5.5 and 10 eV) were demonstrated in STEM-EELS spectra and the corresponding spectral imaging in real space. In the further EELS experiments in reciprocal space, the momentum-dependent spectra reveal very different dispersion behavior between π and π+σ plasmons, with π+σ plasmons showing a typical quadratic dependence whereas the π plasmon exhibiting a linear dispersion analogous to what was reported for graphene. Furthermore, a low energy excitation 0.7~1.6 eV was also observed which is attributed to direct nonvertical interband transitions along the gamma-F direction.

cond-mat.mtrl-sci↗

arXiv2012

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

A Z2 topological insulator protected by time-reversal symmetry is realized via spin-orbit interaction driven band inversion. For example, the topological phase in the Bi-Sb system is due to an odd number of band inversions. A related spin-orbit system, the (Pb/Sn)Te class, has been known to contain an even number of inversions based on band theory. Here we experimentally investigate the possibility of a mirror symmetry protected topological crystalline insulator phase in the (Pb/Sn)Te class of materials which has been theoretically predicted to exist in its non-alloyed version. Our experimental results show that at a finite-Pb composition above the topological inversion phase transition, the surface exhibits even number of spin-polarized Dirac cone states (as opposed to odd as observed in Bi-Sb alloy or Bi2Se3) revealing mirror protected topological order distinct from that observed in Bi-Sb or Bi2Se3. Our observation of the spin-polarized Dirac surface states in the inverted (Pb/Sn)Te and their absence in the non-inverted compounds related via a topological phase transition (spin-orbit induced band inversion type) provide the experimental groundwork for opening the research on novel topological order in future quantum devices.

cond-mat.mes-hall↗

arXiv2012

Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.

cond-mat.mtrl-sci↗

arXiv2012

Electron-phonon Coupling on the Surface of the Topological Insulator Bi2Se3: Determined from Surface Phonon Dispersion Measurements

In this letter we report measurements of the coupling between Dirac fermion quasiparticles (DFQs) and phonons on the (001) surface of the strong topological insulator Bi2Se3. While most contemporary investigations of this coupling have involved examining the temperature dependence of the DFQ self-energy via angle-resolved photoemission spectroscopy (ARPES) measurements, we employ inelastic helium atom scattering to explore, for the first time, this coupling from the phonon perspective. Using a Hilbert transform, we are able to obtain the imaginary part of the phonon self-energy associated with a dispersive surface phonon branch identified in our previous work [1] as having strong interactions with the DFQs. From this imaginary part of the self-energy we obtain a branch-specific electron-phonon coupling constant of 0.43, which is stronger than the values reported form the ARPES measurements.

cond-mat.mtrl-sci↗

arXiv2011

Interaction of Phonons and Dirac Fermions on the Surface of Bi2Se3: A Strong Kohn Anomaly

We report the first measurements of phonon dispersion curves on the (001) surface of the strong three-dimensional topological insulator Bi2Se3. The surface phonon measurements were carried out with the aid of coherent helium beam surface scattering techniques. The results reveal a prominent signature of the exotic metallic Dirac fermion quasi-particles, including a strong Kohn anomaly. The signature is manifest in a low energy isotropic convex dispersive surface phonon branch with a frequency maximum of 1.8 THz, and having a V-shaped minimum at approximately 2kF that defines the Kohn anomaly. Theoretical analysis attributes this dispersive profile to the renormalization of the surface phonon excitations by the surface Dirac fermions. The contribution of the Dirac fermions to this renormalization is derived in terms of a Coulomb-type perturbation model.

cond-mat.mtrl-sci↗