arXiv subjects

R. Singha

Publications and source records attributed to R. Singha.

3 recordsLinked to original sources

arXiv2024

Uniaxial strain effects on the Fermi surface and quantum mobility of the Dirac nodal-line semimetal ZrSiS

ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hole pockets, and multiple magnetic breakdown orbits. In this work we use uniaxial strain as a tuning parameter for the Fermi surface and the low energy excitations. We measure the magnetoresistance of a single crystal under tensile (up to 0.34 %) and compressive (up to -0.28 %) strain exerted along the $a$ axis and in magnetic fields up to 30 T. We observe a systematic weakening of the peak structure in the Shubnikov-de Haas frequency spectrum upon changing from compressive to tensile strain. This effect may be explained by a decrease in the effective quantum mobility upon decreasing the $c/a$ ratio, which is corroborated by a concurrent increase in the Dingle temperature.

cond-mat.mtrl-sci↗

arXiv2017

Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS

While the discovery of Dirac and Weyl type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications, is an experimental challenge. In all the reported materials, linear dispersion survives only up to a few hundred meV from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, ARPES measurements have shown an unusually robust linear dispersion (up to $\sim$2 eV) with multiple non-degenerate Dirac nodes. In this context, we present the magnetotransport study on ZrSiS crystal, which represents a large family of materials (\textit{WHM} with \textit{W} = Zr, Hf; \textit{H} = Si, Ge, Sn; \textit{M} = O, S, Se, Te) with identical band topology. Along with extremely large and non-saturating magnetoresistance (MR), $\sim$ 1.4 $\times$ 10$^{5}$ \% at 2 K and 9 T, it shows strong anisotropy depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. Non-trivial $π$ Berry phase confirms the Dirac fermionic nature for both types of charge carriers. The long-sought relativistic phenomenon of massless Dirac fermions, known as Adler-Bell-Jackiw chiral anomaly, has also been observed.

cond-mat.mtrl-sci↗

arXiv2016

Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$

To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the strength of the magnetic field and carrier density via In doping. With the increase in magnetic field, the scattering time crosses over from being nearly energy independent to a regime of linear dependence. On the other hand, the scattering time enters into the inverse energy-dependent regime and the Fermi surface strongly modifies with 2\% In doping at Cd site. With further increase in In content from 2 to 4\%, we did not observe any Shubnikov-de Haas oscillation up to 9 T field, but the magnetoresistance is found to be quite large as in the case of undoped sample.

cond-mat.str-el↗