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R. Swami

Publications and source records attributed to R. Swami.

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Experimental set-up for thermal measurements at the nanoscale using an SThM probe with niobium nitride thermometer

Scanning Thermal Microscopy (SThM) has become an important measurement tool for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM) probe and a very sensitive resistive thermometry; the thermometer being located at the apex of the probe tip allows the mapping of temperature or thermal properties of nanostructured materials with very high spatial resolution. The high interest of the SThM technique in the field of thermal nanoscience currently suffers from a low temperature sensitivity despite its high spatial resolution. To address this challenge, we developed a high vacuum-based AFM system hosting a highly sensitive niobium nitride (NbN) SThM probe to demonstrate its unique performance. As a proof of concept, we utilized this custom-built system to carry out thermal measurements using the 3$\omega$ method. By measuring the $V_{3\omega}$ voltage on the NbN resistive thermometer in vacuum conditions we were able to determine the SThM probe's thermal conductance and thermal time constant. The performance of the probe is demonstrated by doing thermal measurements in-contact with a sapphire sample.

cond-mat.mes-hall

Electronic Transport and Fermi Surface Topology of Zintl Phase Compound SrZn2Ge2

We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi liquid behavior. However, a notable deviation is observed from this behavior at lower temperatures as a pronounced resistivity plateau emerges below 10 K. This plateau is remarkably robust, and persists under the magnetic fields of up to 10 T. Both the transverse and longitudinal magnetoresistance exhibit a crossover at critical field B* from weak-field quadratic-like to high-field unsaturated linear field dependence at low temperatures (T \leq 50 K). Possible sources of linear magnetoresistance are discussed based on the Fermi surface topology, classical and quantum transport models. The Hall resistivity data establish SrZn2Ge2 as a multiband system with contributions from both the electrons and holes. The Hall coefficient is observed to decrease with increasing temperature and magnetic field, changing its sign from positive to negative. The negative Hall coefficient observed at low temperatures in high fields and at high temperatures over the entire field range suggests that the highly mobile electron charge carriers dominate the electronic transport. Our first-principles calculations show that nontrivial topological surface states exist in SrZn2Ge2 within the bulk gap along the Gamma-M path. Notably, these surface states extend from the valence to conduction band with their number varying based on the Sr and Ge termination plane. The Fermi surface of the compound exhibits a distinct tetragonal petal-like structure, with one open and several closed surfaces. Overall, these findings offer crucial insights into the mechanisms underlying the electronic transport of the compound.

cond-mat.str-el