arXiv subjects

R. W. Nunes

Publications and source records attributed to R. W. Nunes.

At least 19 recordsLinked to original sources

arXiv2017

Magnetic states of linear defects in graphene monolayers: effects of strain and interaction

The combined effects of defect-defect interaction and of uniaxial or biaxial strains of up to 10\% on the development of magnetic states on the defect-core-localized quasi-one-dimensional electronic states generated by the so-called 558 linear extended defect in graphene monolayers are investigated by means of {\it ab initio} calculations. Results are analyzed on the basis of the heuristics of the Stoner criterion. We find that conditions for the emergence of magnetic states on the 558 defect can be tuned by uniaxial tensile parallel strains (along the defect direction) at both limits of isolated and interacting 558 defects. Parallel strains are shown to lead to two cooperative effects that favor the emergence of itinerant magnetism: enhancement of the DOS of the resonant defect states in the region of the Fermi level and tuning of the Fermi level to the maximum of the related DOS peak. A perpendicular strain is likewise shown to enhance the DOS of the defect states, but it also effects a detunig of the Fermi level that shifts away from the maximum of the DOS of the defect states, which inhibts the emergence of magnetic states. As a result, under biaxial strains the stabilization of a magnetic state depends on the relative magnitudes of the two components of strain.

cond-mat.mes-hall↗

arXiv2016

Topologically-protected metallic states induced by a one-dimensional extended defect in a 2D topological insulator

We report ab initio calculations showing that a single one-dimensional extended defect can originate topologically-protected metallic states in the bulk of two-dimensional topological insulators. We find that a narrow extended defect composed of periodic units consisting of one octogonal and two pentagonal rings embedded in the hexagonal bulk of a bismuth bilayer introduces two pairs of one-dimensional Dirac-fermion states with opposite spin-momentum locking. Although both Dirac pairs are localized along the extended-defect core, their interactions are screened due to the trivial topological nature of the extended defect.

cond-mat.mtrl-sci↗

arXiv2014

Theoretical chemistry of $α$-graphyne: functionalization, symmetry breaking, and generation of Dirac-fermion mass

We investigate the electronic structure and lattice stability of pristine and functionalized (with either hydrogen or oxygen) $α$-graphyne systems. We identify lattice instabilities due to soft-phonon modes, and describe two mechanisms leading to gap opening in the Dirac-fermion electronic spectrum of these systems: symmetry breaking, connected with the lattice instabilities, and partial incorporation of an $sp^3$-hybrid character in the covalent-bonding network of a buckled hydrogenated $α$-graphyne lattice that retains the symmetries of the parent pristine $α$-graphyne. In the case of an oxygen-functionalized $α$-graphyne structure, each O atom binds asymmetrically to two twofold-coordinated C atoms, breaking inversion and mirror symmetries, and leading to the opening of a sizeable gap of 0.22 eV at the Dirac point. Generally, mirror symmetries are found to suffice for the occurrence of gapless Dirac cones in these $α$-graphyne systems, even in the absence of inversion symmetry centers. Moreover, we analyze the gapless and gapped Dirac cones of pristine and functionalized $α$-graphynes from the perspective of the dispersion relations for massless and massive free Dirac fermions. We find that mirror-symmetry breaking mimics a Dirac-fermion mass-generation mechanism in the oxygen-functionalized $α$-graphyne, leading to gap opening and to isotropic electronic dispersions with a rather small electron-hole asymmetry. In the hydrogen-functionalized case, we find that carriers show a remarkable anisotropy, behaving as massless fermions along the M-K line in the Brillouin zone and as massive fermions along the $Γ$-K line.

cond-mat.mtrl-sci↗

arXiv2012

Stability of extended defects on boron nitride and graphene monolayers: the role of chemical environment

We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and nitrogen species in the synthesis process. In an N-rich environment, a zigzag APB with N-rich core is the most stable structure, while under B-rich or intrinsic growth conditions, an armchair APB with stoichiometric core is the most stable. This stability transition is shown to arise from a competition between homopolar-bond (B-B and N-N) and elastic energy costs in the core of the APBs. Moreover, in the presence of a carbon source we find that a carbon-doped zigzag APB becomes the most stable boundary near the N-rich limit. The electronic structure of the two types of APBs in BN is shown to be particularly distinct, with the zigzag APB depicting defect-like deep electronic bands in the band gap, while the armchair APB shows bulk-like shallow electronic bands.

cond-mat.mes-hall↗

arXiv2012

Non-hexagonal-ring defects and structures induced by strain in graphene and in functionalized graphene

We perform {\textit ab initio} calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol (planar COH). We find that the simplest of such topological defects, the Stone-Wales defect, acts as a seed for strain-induced dissociation and multiplication of topological defects. Through the application of inhomogeneous deformations to graphene, graphane and graphenol with initially small concentrations of pentagonal and heptagonal rings, we obtain several novel stable structures that possess, at the same time, large concentrations of non-hexagonal rings (from fourfold to elevenfold) and small formation energies.

cond-mat.mes-hall↗

arXiv2011

Correlated magnetic states in domain and grain boundaries in graphene

Ab initio calculations indicate that while the electronic states introduced by grain boundaries in graphene are only partially confined to the defect core, a domain boundary introduces states near the Fermi level that are very strongly confined to the core of the defect, and that display a ferromagnetic ground state. The domain boundary is fully immersed within the graphene matrix, hence this magnetic state is protected from reconstruction effects that have hampered experimental detection in the case of ribbon edge states. Furthermore, our calculations suggest that charge transfer between one-dimensional extended defects and the bulk in graphene is short ranged for both grain and domain boundaries.

cond-mat.mes-hall↗

arXiv2010

Surface dangling bond states and band-lineups in hydrogen-terminated Si, Ge, and Ge/Si nanowires

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels e(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3 +/- 0.1 eV below the vacuum level. Calculations of e(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.

cond-mat.mes-hall↗

arXiv2010

Gap opening in topological-defect lattices in graphene

Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.

cond-mat.mes-hall↗

arXiv2010

DNA-psoralen: single-molecule experiments and first principles calculations

The authors measure the persistence and contour lengths of DNA-psoralen complexes, as a function of psoralen concentration, for intercalated and crosslinked complexes. In both cases, the persistence length monotonically increases until a certain critical concentration is reached, above which it abruptly decreases and remains approximately constant. The contour length of the complexes exhibits no such discontinuous behavior. By fitting the relative increase of the contour length to the neighbor exclusion model, we obtain the exclusion number and the intrinsic intercalating constant of the psoralen-DNA interaction. Ab initio calculations are employed in order to provide an atomistic picture of these experimental findings.

physics.bio-ph↗

arXiv2010

Semiconducting chains of gold and silver

The authors introduce a geometry for ultrathin Au and Ag wires that ab initio calculations indicate to be more stable than previously considered planar geometries for these systems, by about 0.1 eV per atom. This structure is insulating for both metals and for related Ag_(0.5)-Au_(0.5) alloys, with gaps of 1.3 eV for Au, 0.8 eV for Ag, and varying between 0.1 eV and 1.9 eV for the alloys. The insulating nature of the geometry is not a result of Peierls instabilities, and is analyzed in terms of an interplay between geometric and electronic structure effects.

cond-mat.mtrl-sci↗

arXiv2010

On the inner Double-Resonance Raman scattering process in bilayer graphene

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.

cond-mat.mes-hall↗

arXiv2009

Complex evolution of the electronic structure from polycrystalline to monocrystalline graphene: generation of a new Dirac point

First principles calculations, employed to address the properties of polycrystalline graphene, indicate that the electronic structure of tilt grain boundaries in this system displays a rather complex evolution towards graphene bulk, as the tilt angle decreases, with the generation of a new Dirac point at the Fermi level, and an anisotropic Dirac cone of low energy excitations. Moreover, the usual Dirac point at the {\bf K} point falls below the Fermi level, and rises towards it as the tilt angle decreases. Further, our calculations indicate that the grain-boundary formation energy behaves non-monotonically with the tilt angle, due to a change in the the spatial distribution and relative contributions of the bond-stretching and bond-bending deformations associated with the formation of the defect.

cond-mat.mes-hall↗

arXiv2004

Electronic structure of nanocones of boron nitrite

We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles $θ=nπ/3$. Nanocones with odd values of $n$ present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the bulk BN value, by as much as 2 eV. In contrast, nanocones with even values of $n$ do not have such defects and present work functions that are very similar to the BN bulk value. These results should have strong consequences for the field emission properties of boron nitride nanocones and nanotubes.

cond-mat.mtrl-sci↗

arXiv2004

A stacking-fault based microscopic model for platelets in diamond

We propose a new microscopic model for the $\{001\}$ planar defects in diamond commonly called platelets. This model is based on the formation of a metastable stacking fault, which can occur because of the ability of carbon to stabilize in different bonding configurations. In our model the core of the planar defect is basically a double layer of three-fold coordinated $sp^2$ carbon atoms embedded in the common $sp^3$ diamond structure. The properties of the model were determined using {\it ab initio} total energy calculations. All significant experimental signatures attributed to the platelets, namely, the lattice displacement along the $[001]$ direction, the asymmetry between the $[110]$ and the $[1\bar{1}0]$ directions, the infrared absorption peak $B^\prime$, and broad luminescence lines that indicate the introduction of levels in the band gap, are naturally accounted for in our model. The model is also very appealing from the point of view of kinetics, since naturally occurring shearing processes will lead to the formation of the metastable fault.

cond-mat.mtrl-sci↗

arXiv2001

Berry-phase treatment of the homogeneous electric field perturbation in insulators

A perturbation theory of the static response of insulating crystals to homogeneous electric fields, that combines the modern theory of polarization (MTP) with the variation-perturbation framework is developed, at unrestricted order of perturbation. First, we address conceptual issues related to the definition of such a perturbative approach. In particular, in our definition of an electric-field-dependent energy functional for periodic systems, the position operator appearing in the perturbation term is replaced by a Berry-phase expression, along the lines of the MTP. Moreover, due to the unbound nature of the perturbation, a regularization of the Berry-phase expression for the polarization is needed in order to define a numerically-stable variational procedure. Regularization is achieved by means of discretization, which can be performed either before or after the perturbation expansion. We compare the two possibilities and apply them to a model tight-binding Hamiltonian. Lowest-order as well as generic formulas are presented for the derivatives of the total energy, the normalization condition, the eigenequation, and the Lagrange parameters.

cond-mat.mtrl-sci↗

arXiv2000

Models of core reconstruction for the 90-degree partial dislocation in semiconductors

We compare the models that have been proposed in the literature for the atomic structure of the 90-degree partial dislocation in the homopolar semiconductors, silicon, diamond, and germanium. In particular, we examine the traditional single-period and our recently proposed double-period core structures. Ab-initio and tight-binding results on the core energies are discussed, and the geometries are compared in light of the available experimental information about dislocations in these systems. The double-period geometry is found to be the ground-state structure in all three materials. We address boundary-conditions issues that have been recently raised about these results. The structures of point excitations (kinks, solitons, and kink-soliton complexes) in the two geometries are also reviewed.

cond-mat.mtrl-sci↗

arXiv2000

Stability of the Period-Doubled Core of the 90-degree Partial in Silicon

In a recent Letter [N. Lehto and S. Oberg, Phys. Rev. Lett. 80, 5568 (1998)], Lehto and Oberg investigated the effects of strain fields on the core structure of the 90-degree partial dislocation in silicon, especially the influence of the choice of supercell periodic boundary conditions in theoretical simulations. We show that their results for the relative stability between the two structures are in disagreement with cell-size converged tight-binding total energy (TBTE) calculations, which suggest the DP core to be more stable, regardless of the choice of boundary condition. Moreover, we argue that this disagreement is due to their use of a Keating potential.

cond-mat.mtrl-sci↗

arXiv1998

Theoretical search for Chevrel phase based thermoelectric materials

We investigate the thermoelectric properties of some semiconducting Chevrel phases. Band structure calculations are used to compute thermopowers and to estimate of the effects of alloying and disorder on carrier mobility. Alloying on the Mo site with transition metals like Re, Ru or Tc to reach a semiconducting composition causes large changes in the electronic structure at the Fermi level. Such alloys are expected to have low carrier mobilities. Filling with transition metals was also found to be incompatible with high thermoelectric performance based on the calculated electronic structures. Filling with Zn, Cu, and especially with Li was found to be favorable. The calculated electronic structures of these filled Chevrel phases are consistent with low scattering of carriers by defects associated with the filling. We expect good mobility and high thermopower in materials with the composition close to (Li,Cu)$_4$Mo$_6$Se$_8$, particularly when Li-rich, and recommend this system for experimental investigation.

cond-mat.mtrl-sci↗