arXiv subjects

R. Watters

Publications and source records attributed to R. Watters.

2 recordsLinked to original sources

arXiv2026

Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation.

cond-mat.mtrl-sci↗

arXiv2025

Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties

Guided by a comprehensive analysis of accumulation mode transistor physics and oxide semiconductor materials properties, we demonstrate an innovative oxide semiconductor transistor structure and process flow that break the constraint between performance and reliability observed in conventional InGaZnO4 (IGZO) transistors. The newly proposed 10 nm innovative IGZO transistor features high on-current, high extrinsic mobility (20 cm2V-1s-1), near-zero hysteresis, and only 15 mV Vt shift after positive-bias-stress (PBS) of 3 MV/cm stress for 1000s at room temperature.

cond-mat.mtrl-sci↗