arXiv subjects

R. de Coss

Publications and source records attributed to R. de Coss.

12 recordsLinked to original sources

arXiv2024

Magnetic-thermodynamic phase transition in strained phosphorous-doped graphene

We explore quantum-thermodynamic effects in a phosphorous (P)-doped graphene monolayer subjected to biaxial tensile strain. Introducing substitutional P atoms in the graphene lattice generates a tunable spin magnetic moment controlled by the strain control parameter $\varepsilon$. This leads to a magnetic quantum phase transition (MQPT) at zero temperature modulated by $\varepsilon$. The system transitions from a magnetic phase, characterized by an out-of-plane $sp^3$ type hybridization of the P-carbon (P-C) bonds, to a non-magnetic phase when these bonds switch to in-plane $sp^2$ hybridization. Employing a Fermi-Dirac statistical model, we calculate key thermodynamic quantities as the electronic entropy $S_e$ and electronic specific heat $C_e$. At finite temperatures, we find the MQPT is reflected in both $S_e$ and $C_e$, which display a distinctive $Λ$-shaped profile as a function of $\varepsilon$. These thermodynamic quantities sharply increase up to $\varepsilon = 5\% $ in the magnetic regime, followed by a sudden drop at $\varepsilon = 5.5\% $, transitioning to a linear dependence on $\varepsilon$ in the nonmagnetic regime. Notably, $S_e$ and $C_e$ capture the MQPT behavior for low and moderate temperature ranges, providing insights into the accessible electronic states in P-doped graphene. This controllable magnetic-to-nonmagnetic switch offers potential applications in electronic nanodevices operating at finite temperatures.

cond-mat.mes-hall↗

arXiv2022

Understanding the $sp$ magnetism in substitutional doped graphene

Defect-induced magnetism in graphene has been predicted theoretically and observed experimentally. However, there are open questions about the origin of the magnetic behavior when substitutional impurities with $sp$ electrons are considered. The aim of this work is to contribute to the understanding of impurity-induced spin magnetism in doped graphene systems. Thus, the electronic structure and spin magnetic moments for substitutional doped graphene with impurities from groups IIIA (B, Al, and Ga) and VA (N, P, As, Sb, and Bi) of the periodic table were obtained within the framework of density functional theory. The nature of the magnetic ground state was determined from calculations of the total energy as a function of the spin magnetic moment using the fixed spin moment method. We show that the spontaneous magnetization in the studied systems arises from an electronic instability by the presence of a narrow impurity band at the Fermi level. Furthermore, we found that the emergence of spin polarization requires the impurity to introduce an extra electron to the graphene lattice and that the impurity-carbon hybridization is close to the $sp^3$ geometry. These features reveal that the charge doping sign and the hybridization degree play a fundamental role in the origin of $sp$ magnetism in substitutional doped graphene.

cond-mat.mtrl-sci↗

arXiv2020

Effects of biaxial strain on the impurity-induced magnetism in P-doped graphene and N-doped silicene: A first principles study

The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes $4\times 4$, $5\times 5$, and $6\times 6$, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4 %, respectively. For both systems, the calculated magnetic moment is 1.0 $μ_B$ per impurity atom for the three studied concentrations. From the analysis of the electronic structure and the total energy as a function of the magnetization, we show that a Stoner-type model describing the electronic instability of the narrow impurity band accounts for the origin of $sp$-magnetism in P-graphene and N-silicene. Under biaxial strain the impurity band dispersion increases and the magnetic moment gradually decreases, with the consequent collapse of the magnetization at moderate strain values. Thus, we found that biaxial strain induces a magnetic quantum phase transition in P-graphene and N-silicene.

cond-mat.mes-hall↗

arXiv2017

Comment on "Electron-phonon coupling in two-dimensional silicene and germanene"

In their work, Yan et al. [Phys. Rev. B 88, 121403 (2013)] employing density functional perturbation theory (DFPT) calculations, demonstrate that silicene and germanene show weaker Kohn anomalies in the $Γ$-$E_g$ and $K$-$A_1$ phonon modes, compared to graphene. Furthermore, they compute the electron phonon (e-ph) coupling matrix elements using the frozen phonon approach and found that in silicene the average e-ph coupling matrix-element square over the Fermi surface, $\langle g_{{\bf q}ν}^2\rangle_{F}$, is about 50 % of those in graphene, but in germanene is weaker and nearly negligible. However, Yan et al. argues that the smaller Fermi velocity in silicene compensates the reduced $\langle g_{{\bf q}ν}^2\rangle_{F}$, leading to phonon linewidths ($γ_{{\bf q}ν}$) slightly larger than those in graphene. In this Comment, we show that the DFPT and the frozen phonon results of Yan et al. for silicene are inconsistent. Additionally, we have evaluated the e-ph coupling using direct DFPT calculations, analytical relations, and frozen phonon calculations, and we found systematically that $\langle g_{{\bf q}ν}^2\rangle_{F}$ and $γ_{{\bf q}ν}$ in silicene are one order of magnitude smaller than in graphene, in contrast to the conclusions of Yan et al.

cond-mat.mtrl-sci↗

arXiv2016

On the dynamical stability of ferromagnetic Ru and Os in the bct structure: a first-principles study

Recent theoretical studies have predicted magnetic states for Ru and Os in the body centered tetragonal structure (bct) with c/a < 1. In this study, we present first principles calculations of the phonon dispersion for ferromagnetic Ru- and Os-bct along the epitaxial and uniaxial Bain paths, to evaluate their dynamical stability. The phonon dispersions were computed using the density function perturbation theory, including the gradient corrections to the exchange-correlation functional within the plane-waves ultrasoft-pseudopotential approximation. The phonon dispersion for the local minimum in the Bain path with c/a < 1 as well as the uniaxial and epitaxial strained structures are analyzed. We find imaginary frequencies along different directions of the Brillouin zone, which indicates that both systems are dynamically unstable. Consequently, ferromagnetic Ru and Os in the body centered tetragonal structure with c/a < 1 are not truly metastable phases.

cond-mat.mtrl-sci↗

arXiv2016

Uniaxial strain-induced Kohn anomaly and electron-phonon coupling in acoustic phonons of graphene

Recent advances in strain engineering at the nanoscale have shown the feasibility to modulate the properties of graphene. Although the electron-phonon (e-ph) coupling and Kohn anomalies in graphene define the phonon branches contributing to the resonance Raman scattering, and is relevant to the electronic and thermal transport as a scattering source, the evolution of the e-ph coupling as a function of strain has been less studied. In this work, the Kohn anomalies and the e-ph coupling in uniaxially strained graphene along armchair (AC) and zigzag (ZZ) directions were studied by means of density functional perturbation theory calculations. In addition to the phonon anomaly at the transversal optical (TO) phonon branch in the K point for pristine graphene, we found that uniaxial strain induces a discontinuity in the frequency derivative of the longitudinal acoustic (LA) phonon branch. This behavior corresponds to the emergence of a Kohn anomaly, as a consequence of a strain-enhanced e-ph coupling. Thus, the present results for uniaxially strained graphene contrast with the commonly assumed view that the e-ph coupling around the K point is only present in the TO phonon branch.

cond-mat.mes-hall↗

arXiv2015

Landau Levels in Uniaxially Strained Graphene: A Geometrical Approach

The effect of strain on the Landau levels (LLs) spectra in graphene is studied, using an effective Dirac-like Hamiltonian which includes the distortion in the Dirac cones, anisotropy and spatial-dependence of the Fermi velocity induced by the lattice change through a renormalized linear momentum. We propose a geometrical approach to obtain the electron's wave-function and the LLs in graphene from the Sturm-Liouville theory, using the minimal substitution method. The coefficients of the renormalized linear momentum are fitted to the energy bands, which are obtained from a Density Functional Theory (DFT) calculation. In particular, we evaluate the case of Dirac cones with an ellipsoidal transversal section resulting from uniaxially strained graphene along armchair (AC) and zig-zag (ZZ) directions. We found that uniaxial strain in graphene induces a contraction of the LLs spectra for both strain directions. Also, is evaluated the contribution of the tilting of Dirac cone axis resulting from the uniaxial deformations to the contraction of the LLs spectra.

cond-mat.mtrl-sci↗

arXiv2013

Graphene Enabled Low-Control Quantum Gates between Static and Mobile Spins

We show that the feature of Klein tunneling makes graphene a unique interface for implementing low control quantum gates between static and mobile qubits. A ballistic electron spin is considered as the mobile qubit, while the static qubit is the electronic spin of a quantum dot fixed in a graphene nanoribbon. Scattering is the low control mechanism of the gate, which, in other systems, is really difficult to exploit because of both back-scattering and the momentum dependence of scattering. We find that Klein tunneling enables the implementation of quasi-deterministic quantum gates regardless of the momenta or the shape of the wave function of the incident electron. The Dirac equation is used to describe the system in the one particle approximation with the interaction between the static and the mobile spins modelled by a Heisenberg Hamiltonian. Furthermore, we discuss an application of this model to generate entanglement between two well separated static qubits.

quant-ph↗

arXiv2010

Electron-phonon coupling and two-band superconductivity of Al- and C-doped MgB2

We have studied the electron-phonon and superconducting properties of the Mg{1-x}AlxB2 and MgB{2(1-y)}C{2y} alloys within the framework of density functional theory using the self-consistent virtual-crystal approximation. For both alloys, the Eliashberg spectral functions and the electron-phonon coupling constants have been calculated in the two-band model for several concentrations up to x(Al)=0.55 and y(C)=0.175. We solved numerically the two-band Eliashberg gap equations without considering interband scattering. Using a single parameter for the Coulomb pseudopotential, which was determined for the undoped compound, we were able to reproduce the experimental doping dependence of Delta_sigma, Delta_pi, and T_c for both alloys on a quantitative level. In particular, the observed differences in the doping range of superconductivity between Al and C doping indicate a pronounced influence of the doping site, which can be explained naturally in the present approach without the need to invoke interband scattering, suggesting that this factor plays only a minor role.

cond-mat.supr-con↗

arXiv2010

Implementing quantum gates through scattering between a static and a flying qubit

We investigate whether a two-qubit quantum gate can be implemented in a scattering process involving a flying and a static qubit. To this end, we focus on a paradigmatic setup made out of a mobile particle and a quantum impurity, whose respective spin degrees of freedom couple to each other during a one-dimensional scattering process. Once a condition for the occurrence of quantum gates is derived in terms of spin-dependent transmission coefficients, we show that this can be actually fulfilled through the insertion of an additional narrow potential barrier. An interesting observation is that under resonance conditions the above enables a gate only for isotropic Heisenberg (exchange) interactions and fails for an XY interaction. We show the existence of parameter regimes for which gates able to establish a maximum amount of entanglement can be implemented. The gates are found to be robust to variations of the optimal parameters.

quant-ph↗

arXiv2010

Transmission properties of the one-dimensional array of delta potentials

The problem of one-dimensional quantum wire along which a moving particle interacts with a linear array of N delta-function potentials is studied. Using a quantum waveguide approach, the transfer matrix is calculated to obtain the transmission probability of the particle. Results for arbitrary N and for specific regular arrays are presented. Some particular symmetries and invariances of the delta-function potential array for the N = 2 case are analyzed in detail. It is shown that perfect transmission can take place in a variety of situations.

quant-ph↗

arXiv2002

Effects of Al doping on the structural and electronic properties of Mg(1-x)Al(x)B2

We have studied the structural and electronic properties of Mg(1-x)Al(x)B2 within the Virtual Crystal Approximation (VCA) by means of first-principles total-energy calculations. Results for the lattice parameters, the electronic band structure, and the Fermi surface as a function of Al doping for 0<x<0.6 are presented. The ab initio VCA calculations are in excellent agreement with the experimentally observed change in the lattice parameters of Al doped MgB2. The calculations show that the Fermi surface associated with holes a the boron planes collapses gradually with aluminum doping and vanishes for x=0.56. In addition, an abrupt topological change in the sigma-band Fermi surface was found for x=0.3. The calculated hole density correlates closely with existing experimental data for Tc(x), indicating that the observed loss of superconductivity in Mg(1-x)Al(x)B2 is a result of hole bands filling.

cond-mat.supr-con↗