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Raúl Guerrero-Avilés

Publications and source records attributed to Raúl Guerrero-Avilés.

3 recordsLinked to original sources

Toward Quantum Utility in Correlated Topological Matter: Variational Preparation of Fractional Quantum Hall Manifolds

We investigate the use of variational quantum algorithms to prepare and characterize fractional quantum Hall states on near-term quantum processors. Focusing on the $ν=1/3$ Laughlin phase described by the $V_1$ Haldane pseudopotential, we formulate the lowest-Landau-level problem in second quantization, and implement particle-number-preserving variational circuits combined with the variational quantum eigensolver (VQE) and variational quantum deflation (VQD). We benchmark the approach in two complementary geometries: Haldane sphere and torus shape. On the Haldane sphere, the target state is a unique zero-energy Laughlin ground state, providing a controlled test of the variational workflow and of excited-state reconstruction. On the torus, the problem retains the genuinely two-dimensional periodic character of the quantum Hall liquid and exhibits the threefold topological ground-state degeneracy expected for the $ν=1/3$ fractional filling factor. This feature makes the torus a more demanding benchmark than the quasi-one-dimensional cylinder or thin-torus limits commonly exploited in state-preparation quantum protocols. We benchmark the hardware-optimized variational states against exact diagonalization using energy estimates, error-mitigated observables, and subspace-containment diagnostics. Our results show that hybrid quantum algorithms can approximately reconstruct the low-energy structure of small fractional quantum Hall systems, including the topological ground-state manifold on the torus. Beyond serving as a benchmark for quantum hardware, this geometry-resolved approach provides a route toward quantum simulations of fractional Chern insulators and strongly correlated topological phases in realistic two-dimensional materials.

quant-ph↗

Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions

Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order. However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternative, hexagonal stacking is the most commonly found geometry and has been considered the most stable configuration for many years. Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer graphene stackings and showed how delicate this subject is. These few-layer graphenes appear to have two basic stackings with similar energies. The rhombohedral and Bernal stackings are selected using not only compressions but anisotropic in-plane distortions. Furthermore, switching between stable stackings is more clearly induced by deformations such as shear and breaking of the symmetries between graphene sublattices, which can be accessed during selective synthesis approaches. We seek a guide on how to better control -- by preserving and changing -- the stackings in multilayer graphene samples.

cond-mat.mes-hall↗

Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers

The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several $μ$m, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations.

cond-mat.mes-hall↗