arXiv subjects

Raşit Turan

Publications and source records attributed to Raşit Turan.

6 recordsLinked to original sources

arXiv2026

Production of Upgraded Metallurgical Grade (UMG) silicon for a low-cost high-efficiency and reliable PV technology

UMG-Si has the potential to reduce the cost of PV technology and to improve its environmental profile. In this contribution, we summarize the extensive work made in the research and development of UMG technology for PV, which has led to the demonstration of UMG-Si as a competitive alternative to polysilicon for the production of high-efficiency multicrystalline solar cells and modules. The tailoring of the processing steps along the complete Ferrosolar's UMG-Si manufacturing value chain has been addressed, commencing with the purification stage that results in a moderately compensated material due to the presence of phosphorous and boron. Gallium is added as a dopant at the crystallization stage to obtain a uniform resistivity profile 1 Ohm*cm along the ingot height. Defect engineering techniques based on phosphorus diffusion gettering have been optimized to improve the bulk electronic quality of UMG-Si wafers. Black silicon texturing, compatible with subsequent gettering and surface passivation, has been successfully implemented. Industrial-type BSF and PERC solar cells have been fabricated, achieving cell efficiencies in the range of those obtained with conventional polysilicon substrates. TOPCon solar cell processing key steps have also been tested to further evaluate the potential of the material in advanced device architectures beyond PERC. Degradation mechanisms related to light exposure and operation temperature have been shown not to be significant in UMG PERC solar cells when a regeneration step is implemented, and PV modules with several years of outdoor operation have demonstrated similar performance to reference ones based on poly-Si. LCA has been carried out to evaluate the environmental impact of UMG-based PV technology when compared to the poly-Si-based one, considering different scenarios both for the manufacturing sites and the PV installations.

cond-mat.mtrl-sci↗

arXiv2025

Hydrogenated Aluminum Doped Zinc Oxide as Highly Transparent and Passivating Indium-Free Recombination Junction for TOPCon-Based Bottom Cell

Tandem solar cells offer a promising alternative to exceed the efficiency limits of single-junction silicon photovoltaics, yet they require high-performance recombination junctions that are transparent, passivating, and electrically efficient. Indium tin oxide (ITO), which is conventionally used as a recombination junction material, faces challenges related to indium scarcity and sputter-induced damage. This work investigates hydrogenated aluminum-doped zinc oxide (AZO:H) deposited by spatial atomic layer deposition (s-ALD) as a viable indiumfree alternative for TOPCon-based bottom cells. The deposited AZO:H films demonstrate excellent transparency, exceeding 90% in the 380-1200 nm wavelength range. When applied to n-TOPCon surfaces with an AlOx capping layer, the stack achieves an outstanding passivation quality, indicated by implied open-circuit voltage (iVoc) values up to 734 mV after annealing. The AlOx capping layer proved crucial for enhancing thermal stability by preventing hydrogen effusion at higher temperatures. While the contact resistivity was high for the 20 nm thick films tested, the combination of superior optical and passivation properties establishes spatial ALD-deposited AZO:H as a highly promising material for creating efficient and indiumfree recombination junctions in next-generation tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2025

Simulation of TOPCon/PERC Hybrid Bottom Structure for Perovskite/Silicon Tandem Solar Cells using Quokka3

This work emphasizes the potential of perovskite/silicon tandem solar cells for increased power conversion efficiencies. By employing crystalline silicon (c-Si) as the bottom cell, particularly with p-type PERC technology, there are cost-effective and advantageous physical properties. However, traditional phosphorus-doped emitters in PERC Si bottom cells are hindered by high surface recombination, which limits their performance. This research introduces a novel hybrid PERC/TOPCon structure that integrates a phosphorus-doped poly-Si (n+ TOPCon) layer as the front emitter to address these challenges. Numerical simulations using Quokka3 confirmed the feasibility of the design, focusing on optimizing the rear side metallization to enhance implied open-circuit voltage (Voc) and fill factor (FF). A two-step process systematically varied local contact openings to examine their impact on performance metrics. Results highlighted optimal rear metallization parameters, achieving optimal metal fractions approximately 2%. This innovative approach demonstrates the effectiveness of combining TOPCon and PERC technologies for bottom cells in tandem structures, providing valuable insights into their development and optimization. The study underscores the potential of the hybrid PERC/TOPCon structure in enhancing the functionality and efficiency of perovskite/silicon tandem solar cells.

physics.app-ph↗

arXiv2023

Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography

Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces.

physics.app-ph↗

arXiv2022

High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures

High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim of this study is twofold: on the one hand, to ascertain the efficiency potential of solar cells based on this material in terms of carrier lifetime; and on the other hand, to explore, as a result of that, the adoption of high-efficiency cell architectures by establishing an effective rear-side passivation scheme for the implementation of passivated emitter rear contact (PERC) devices. The carrier lifetime and the surface passivation efficacy are investigated for different passivating layer configurations after single and double P-diffusion gettering processes. Layer stacks consisting of Al2O3, SiOxNy and a-SiNx:H capping overlayers have been optimized, on industrial size, saw-damage-etched UMG wafers and results compared to those obtained using reference iodine-ethanol (IE) passivation. Diagnosis based on minority carrier lifetime and implied Voc (iVoc) measurements helped monitor the impact of parameter optimization on wafer quality, particularly after firing processes. Carrier lifetimes over 600 us at 10^15 cm-3 injection level as well as up to 790 us locally have been measured in UMG-Si wafers passivated with IE after a Phosphorus Diffusion Gettering (PDG), demonstrating the suitability of the material for high-efficiency cell architectures. Values higher than 300 us have been obtained with Al2O3-based passivation layers for gettered UMG wafers, with implied Voc values up to 710 mV. These record-breaking lifetimes and iVoc figures obtained with p-type multicrystalline UMG-Si material demonstrate a significant upgrading of its electronic quality by means of industry-scalable technical processes.

cond-mat.mtrl-sci↗

arXiv2010

Stark effect, polarizability and electroabsorption in silicon nanocrystals

Demonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with respect to the applied field. The polarizability of embedded Si NCs including the excitonic effects is extracted over a diameter range of 2.5--6.5 nm, which displays a cubic scaling, $α=c D^3$, with $c=2.436\times 10^{-11}$ C/(Vm), where $D$ is the NC diameter. Finally, based on intraband electroabsorption analysis, it is predicted that p-doped Si NCs will show substantial voltage tunability, whereas n-doped samples should be almost insensitive. Given the fact that bulk silicon lacks the linear electro-optic effect as being a centrosymmetric crystal, this may offer a viable alternative for electrical modulation using p-doped Si NCs.

cond-mat.mes-hall↗