arXiv subjects

Rachael Keneipp

Publications and source records attributed to Rachael Keneipp.

3 recordsLinked to original sources

arXiv2025

Amino Acid Translocation Through a Dual Nanopore Platform

We demonstrate a dual nanopore platform (DNP) containing a top 2D MoS2 pore in series with a 3 to 5 nm thick SiN pore, vertically separated by 30 nm, with diameters of 1.0 and 3.0 nm, respectively. This platform enables independent probing of analytes by each pore, thereby providing complementary information. We measure translocations of single amino acids (AA) and evaluate current blockades recorded across the two pores upon applying voltage. Small diameters ensured tight passage of individual AAs through the nanopores and provided a good signal-tonoise ratio (RMS current noise of 16 pA_RMS and SNR = 6). We focus on measurements of O-Phospho-L-tyrosine at 400 mV, demonstrating single amino acid detection and a good quantitative agreement with the calculated open pore and blocked currents. Based on these results, future device performance can benefit from slightly smaller pores, specifically the SiN pore, higher voltages and electrolyte concentration, and lower system noise.

physics.app-ph↗

arXiv2025

Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers

Controlling the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for tailoring their optical and electronic properties. While phase transitions in monolayer TMDs and semiconductor-to-metal conversions have been widely studied, structural transitions between semiconducting polytypes - particularly in bilayer (2L) systems - remain underexplored. Here, we demonstrate a W doping-induced phase transition from non-centrosymmetric AA stacking to centrosymmetric AB' in 2L MoS2 synthesized by chemical vapor deposition (CVD). Using polarization-resolved second harmonic generation (SHG) and low-frequency Raman spectroscopy, we identify a phase transition correlated with increasing tungsten (W) concentration. The dilute W-doped 2L system exhibits a vanishing SHG signal and a stiffening of the layer-breathing (LB) vibrational mode, in contrast to undoped samples with strong SHG and a softer LB mode. Aberration corrected scanning transmission electron microscopy (AC-STEM) demonstrates the spatial distribution of W concentration and associated structural changes. These findings highlight W-doping as an effective strategy for inducing phase transitions in 2L TMDs, opening new possibilities for engineered heterostructures, phase-controlled device applications or as a source of single photon emitters.

cond-mat.mtrl-sci↗

arXiv2024

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS2 channel and a ferroelectric Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a fivefold increase in on-state current (~120 uA/um at 1 V) and on-to-off ratio (~2*10^7) in the FeFETs. In addition, the high carrier concentration in the MoS2 channel during the on-state (> 10^14 cm^-2) facilitates the observation of a metal-to-insulator phase transition in monolayer MoS2 permitting observation of high field effect mobility (> 100 cm^2V^-1s^-1) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provides a unique platform to implement high-carrier-density transport in a 2D channel.

physics.app-ph↗