arXiv subjects

Rafael González-Hernández

Publications and source records attributed to Rafael González-Hernández.

21 records · Page 2Linked to original sources

arXiv2020

Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism

Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet.

cond-mat.mtrl-sci↗

arXiv2020

Crystal Hall effect in Collinear Antiferromagnets

Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, discovered more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin-structure of a ferromagnetic, noncolinear antiferromagnetic or skyrmionic form. Here we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at non-centrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room-temperature collinear antiferromagnet RuO$_2$ and catalogue, based on our symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin-structure sheds new light on symmetry breaking phenomena in complex magnets and opens an alternative avenue towards quantum materials engineering for low-dissipation nanoelectronics.

cond-mat.mes-hall↗

arXiv2018

Electrical switching of perpendicular magnetization in L10 FePt single layer

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.

cond-mat.mtrl-sci↗