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Rafael O. Cunha

Publications and source records attributed to Rafael O. Cunha.

2 recordsLinked to original sources

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature

We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pumping process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pumping and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.

cond-mat.mes-hall↗

Bulk and Interface Effects Based on Rashba-Like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

In this work, employing spin-pumping techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR signal, the YIG/Pt/Ti structure exhibited a significantly stronger signal attributed to the orbital Hall effect of Ti. Substituting the Ti layer with Ru revealed a similar phenomenon, wherein the effect is ascribed to the combined action of both spin and orbital Hall effects. Furthermore, we measured the SP-FMR signal in the YIG/Pt(2)/Ru(6)/Ti(6) and YIG/Pt(2)/Ti(6)/Ru(6) heterostructures by just altering the stack order of Ti and Ru layers, where the peak value of the spin pumping signal is larger for the first sample. To verify the influence on the oxidation of Ti and Ru films, we studied a series of thin films subjected to controlled and natural oxidation. As Cu and CuOx is a system that is already known to be highly influenced by oxidation, this metal was chosen to carry out this study. We investigated these samples using SP-FMR in YIG/Pt(2)/CuOx(tCu) and X-ray absorption spectroscopy and concluded that samples with natural oxidation of Cu exhibit more significant results than those when the CuOx is obtained by reactive sputtering. In particular, samples where the Cu layer is naturally oxidized exhibit a Cu2O-rich phase. Our findings help to elucidate the mechanisms underlying the inverse orbital Hall and inverse orbital Rashba-Edelstein-like effects. These insights indeed contribute to the advancement of devices that rely on orbital-charge conversion.

cond-mat.mtrl-sci↗