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Raffaele Colombelli

Publications and source records attributed to Raffaele Colombelli.

29 records · Page 2Linked to original sources

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $μ$m. The first steps towards achieving an integrated photonic circuit are demonstrated.

physics.app-ph↗

III-V on CaF2: a possible waveguiding platform for mid-IR photonic devices

We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is preserved while introducing an optical entryway through the substrate. Replacing the metallic backplane also allows double-side patterning of the active region. Using this approach, we demonstrate strong light-matter coupling between an intersubband transition (lambda $\sim$ 10 microns) and a dispersive resonator, at 300 K and at 78 K. Finally, we evaluate the potential of this approach as a platform for waveguiding in the mid-IR spectral range, with numerical simulations that reveal losses in the 1-10 cm$^{-1}$ range.

physics.app-ph↗

Strong coupling of ionising transitions

We demonstrate that a ionising transition can be strongly coupled to a photonic resonance. The strong coupling manifests itself with the appearance of a narrow optically active resonance below the ionisation threshold. Such a resonance is due to electrons transitioning into a novel bound state created by the collective coupling of the electron gas with the vacuum field of the photonic resonator. Applying our theory to the case of bound-to-continuum transitions in microcavity-embedded doped quantum wells, we show how those strong-coupling features can be exploited as a novel knob to tune both optical and electronic properties of semiconductor heterostructures.

physics.optics↗

Mid-Infrared intersubband polaritons in dispersive metal-insulator-metal resonators

We demonstrate room-temperature strong-coupling between a mid-infrared ($λ$=9.9 $μ$m) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k=0 where - potentially - polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and - simultaneously - to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the concept of strong critical coupling is highlighted.

cond-mat.mes-hall↗

Perfect energy-feeding into strongly coupled systems and interferometric control of polariton absorption

The ability to feed energy into a system, or - equivalently - to drive that system with an external input is a fundamental aspect of light-matter interaction. The key concept in many photonic applications is the "critical coupling" condition: at criticality, all the energy fed to the system via an input channel is dissipated within the system itself. Although this idea was crucial to enhance the efficiency of many devices, it was never considered in the context of systems operating in a non-perturbative regime. In this so-called strong coupling regime, the matter and light degrees of freedom are in fact mixed into dressed states, leading to new eigenstates called polaritons. Here we demonstrate that the strong coupling regime and the critical coupling condition can indeed coexist; in this situation, which we term strong critical coupling, all the incoming energy is converted into polaritons. A semiclassical theory - equivalently applicable to acoustics or mechanics - reveals that the strong critical coupling corresponds to a special curve in the phase diagram of the coupled light-matter oscillators. In the more general case of a system radiating via two scattering ports, the phenomenology displayed is that of coherent perfect absorption (CPA), which is then naturally understood and described in the framework of critical coupling. Most importantly, we experimentally verify polaritonic CPA in a semiconductor-based intersubband-polariton photonic-crystal membrane resonator. This result opens new avenues in the exploration of polariton physics, making it possible to control the pumping efficiency of a system almost independently of its Rabi energy, i.e., of the energy exchange rate between the electromagnetic field and the material transition.

quant-ph↗

Intersubband electroluminescent devices operating in the strong coupling regime

We present a detailed study of the electroluminescence of intersubband devices operating in the light-matter strong coupling regime. The devices have been characterized by performing angle resolved spectroscopy that shows two distinct light intensity spots in the momentum-energy phase diagram. These two features of the electroluminescence spectra are associated with photons emitted from the lower polariton branch and from the weak coupling of the intersubband transition with an excited cavity mode. The same electroluminescent active region has been processed into devices with and without the optical microcavity to illustrate the difference between a device operating in the strong and weak coupling regime. The spectra are very well simulated as the product of the polariton optical density of states, and a function describing the energy window in which the polariton states are populated. The voltage evolution of the spectra shows that the strong coupling regime allows the observation of the electroluminescence at energies otherwise inaccessible.

cond-mat.mes-hall↗

Optical properties of metal-dielectric-metal microcavities in the THz frequency range

We present an experimental and theoretical study of the optical properties of metal-dielectric-metal structures with patterned top metallic surfaces, in the THz frequency range. When the thickness of the dielectric slab is very small with respect to the wavelength, these structures are able to support strongly localized electromagnetic modes, concentrated in the subwavelength metal-metal regions. We provide a detailed analysis of the physical mechanisms which give rise to these photonic modes. Furthermore, our model quantitatively predicts the resonance positions and their coupling to free space photons. We demonstrate that these structures provide an efficient and controllable way to convert the energy of far field propagating waves into near field energy.

physics.optics↗

Coupling of a surface plasmon with localized subwavelength microcavity modes

Mid-infrared photonic modes of a periodically patterned metal-dielectric-metal structure have been investigated theoretically and experimentally. We have observed an anticrossing behaviour between cavity modes localized in the double-metal regions and the surface plasmon polariton, signature of a hybridisation between the two modes.

physics.optics↗

Electrically injected cavity polaritons

We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a planar microcavity, based on the GaAs/AlGaAs material system. At zero bias, the structure is characterised using reflectivity measurements which show, up to room temperature, a wide polariton anticrossing between an intersubband transition and the resonant cavity photon mode. Under electrical injection the spectral features of the emitted light change drastically, as electrons are resonantly injected in a reduced part of the polariton branches. Our experiment demonstrates that electrons can be selectively injected into polariton states up to room temperature.

cond-mat.other↗

Photovoltaic Probe of Cavity Polaritons in a Quantum Cascade Structure

The strong coupling between an intersubband excitation in a quantum cascade structure and a photonic mode of a planar microcavity has been detected by angle-resolved photovoltaic measurements. A typical anticrossing behavior, with a vacuum-field Rabi splitting of 16 meV at 78K, has been measured, for an intersubband transition at 163 meV. These results show that the strong coupling regime between photons and intersubband excitations can be engineered in a quantum cascade opto-electronic device. They also demonstrate the possibility to perform angle-resolved mid-infrared photodetection and to develop active devices based on intersubband cavity polaritons.

quant-ph↗

Design of mid-IR and THz quantum cascade laser cavities with complete TM photonic bandgap

We present the design of mid-infrared and THz quantum cascade laser cavities formed from planar photonic crystals with a complete in-plane photonic bandgap. The design is based on a honeycomb lattice, and achieves a full in-plane photonic gap for transverse-magnetic polarized light while preserving a connected pattern for efficient electrical injection. Candidate defects modes for lasing are identified. This lattice is then used as a model system to demonstrate a novel effect: under certain conditions - that are typically satisfied in the THz range - a complete photonic gap can be obtained by the sole patterning of the top metal contact. This possibility greatly reduces the required fabrication complexity and avoids potential damage of the semiconductor active region.

physics.optics↗