arXiv subjects

Rafiqul Alam

Publications and source records attributed to Rafiqul Alam.

4 recordsLinked to original sources

arXiv2026

Observation of correlation-driven topological transport and robust ferromagnetism in 2D CrS$_2$

The realization of correlated layered magnets hosting robust ferromagnetism with emergent topological transport remains a key challenge in quantum materials. Here we report the first catalyst-free chemical vapour deposition growth of layered 1T-CrS$_2$, establishing a highly stable vdWs ferromagnet with an out-of-plane easy-axis anisotropy and a Curie temperature above room temperature. Transport measurements reveal a semimetal--insulator crossover near 80 K and pronounced negative magnetoresistance up to 350 K. A topological Hall effect emerges below 30 K, a rare signature of correlated transport in layered transition-metal dichalcogenide ferromagnets. First-principles calculations show that spin--orbit coupling gaps Dirac-like crossings, while electronic correlations reconstruct the Fermi surface by suppressing electron pockets and reducing the carrier density, enhancing momentum-dependent out-of-plane spin polarization. Magnetic measurements, supported by Heisenberg exchange calculations, reveal strong nearest-neighbour ferromagnetic exchange that stabilizes long-range ferromagnetism. Our results establish 1T-CrS$_2$ as a rare correlated 3$d$ layered ferromagnet in which electronic correlations and spin--orbit coupling cooperatively drive emergent topological transport.

cond-mat.mtrl-sci↗

arXiv2026

Dynamics of Charge-Density-Wave puddles in 2$H$-NbSe$_2$

Electronic phases in quantum materials are often governed by nanoscale inhomogeneity, where local order develops within spatially confined regions or puddles. A prominent example is an incommensurate charge-density-wave (I-CDW) that comprises locally commensurate domains. In 2$H$-NbSe$_2$, such an I-CDW state persists alongside lattice anharmonicity and superconductivity, raising fundamental questions about the dynamical stabilization of CDW order in puddles. Here, we probe the puddle-dynamics in 2$H$-NbSe$_2$. Raman scattering reveals a strong Fano-coupling between the interlayer shear vibration and the CDW amplitude mode. Time-resolved reflectivity measurement shows a low-frequency ~0.15 THz coherent overdamped oscillation onsetting within the CDW regime at ~17 K, pointing towards a so far unexplored transition. This we identify as a Fano-coupled phonon-CDW hybrid emerging from the collective dynamics of CDW puddles. We establish a framework for capturing intertwinned glassy dynamics with an overdamped oscillatory model. Such dynamics in 2H-NbSe2 highlight how lattice pinning and electronic correlations in layered materials affect the CDW order, which is crucial for the design of novel Van der Waals devices.

cond-mat.str-el↗

arXiv2023

Detection of nontrivial topology driven by charge density wave in a semi-Dirac metal

The presence of electron correlations in a system with topological order can lead to exotic ground states. Considering single crystals of LaAgSb2 which has a square net crystal structure, one finds multiple charge density wave transitions (CDW) as the temperature is lowered. We find large planar Hall (PHE) signals in the CDW phase, which are still finite in the high temperature phase though they change sign. Optimising the structure within first-principles calculations, one finds an unusual chiral metallic phase. This is because as the temperature is lowered, the electrons on the Ag atoms get more localized, leading to stronger repulsions between electrons associated with atoms on different layers. This leads to successive layers sliding with respect to each other, thereby stabilising a chiral structure in which inversion symmetry is also broken. The large Berry curvature associated with the low temperature structure explains the low temperature PHE. At high temperature the PHE arises from the changes induced in the tilted Dirac cone in a magnetic field. Our work represents a route towards detecting and understanding the mechanism in a correlation driven topological transition through electron transport measurements, complemented by ab-initio electronic structure calculations.

cond-mat.mtrl-sci↗

arXiv2022

Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor

Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating. Trapping-detrapping processes closed to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuations arising due to any remote charge fluctuations inside the bulk of the substrate are effectively screened by the heavily doped substrate. Here, we present electronic transport and low frequency noise characteristics of large area CVD graphene field effect transistor (FET) prepared on a lightly doped Si/SiO$_2$ substrate (N$_A$ $\sim$ 10$^{15}$cm$^{-3}$). Through a systematic characterization of transport, noise and capacitance at various temperature, we reveal that remote Si/SiO$_2$ interface can affect the charge transport in graphene severely and any charge fluctuations inside bulk of the silicon substrate can be sensed by the graphene channel. The resistance (R) vs. back gate voltage (V$_{bg}$) characteristics of the device shows a hump around the depletion region formed at the SiO$_2$/Si interface, confirmed by the capacitance (C) - Voltage (V) measurement. Low frequency noise measurement on these fabricated devices shows a peak in the noise amplitude close to the depletion region. This indicates that due to the absence of any charge layer at Si/SiO$_2$ interface, screening ability decreases and as a consequence, any fluctuations in the deep level coulomb impurities inside the silicon substrate can be observed as a noise in resistance in graphene channel via mobility fluctuations. Noise behavior on ionic liquid gated graphene on the same substrate exhibits no such peak in noise and can be explained by the interfacial trapping - detrapping processes closed to the graphene channel.

cond-mat.mes-hall↗