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Raihan Rafi

Publications and source records attributed to Raihan Rafi.

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Linear and Nonlinear Optical Properties of SiO$_2$/TiO$_2$ Heterostructures Grown by Plasma Enhanced Atomic Layer Deposition

Second harmonic (SH) radiation can only be generated in non-centrosymmetric bulk crystals under the electric-dipole approximation. Nonlinear thin films made from bulk crystals are technologically challenging because of complex and high temperature fabrication processes. In this work, heterostructures made of amorphous materials SiO$_2$ and TiO$_2$ were prepared by a CMOS-compatible technique named plasma enhanced atomic layer deposition (PEALD) with deposition temperature at 100 {\deg}C. By using the uniaxial dispersion model, we characterized the form-birefringence properties, which can enable the phase matching condition in waveguides or other nonlinear optical applications. By applying a fringe-based technique, we determined the largest diagonal component of the effective second-order bulk susceptibility $\chi_{zzz}^{(2)}$ = 1.30$\pm$0.13 pm/V at a wavelength of 1032 nm. Noteworthy, we observed strong SH signals from two-component nanolaminates, which are several orders of magnitude larger than from single layers. The SH signals from our samples only require the broken inversion symmetry at the interface. Here optical properties of nanocomposites can be precisely tuned by the promising PEALD technology.

cond-mat.mtrl-sci

Systematic Study of Amorphous ABC Heterostructures at the Atomic Scale as a Second-Order Nonlinear Optical Metamaterial

Systematic exploration of amorphous ABC heterostructures revealed that nanoscale morphological modifications markedly improved their artificial bulk second-order susceptibility. These amorphous birefringent heterostructures were fabricated through plasma-enhanced atomic layer deposition of three oxides, effectively breaking the centrosymmetry on the nanoscale. We observe a dependence of the optical nonlinearity on the thickness variation of three constituent materials, SiO$_2$, TiO$_2$, and Al$_2$O$_3$, ranging from tens of nanometers to the atomic scale, and these thin films exhibit second-order susceptibility at their interfaces. Our findings reveal that the enhancement of nonlinear optical properties is strongly correlated with a high density of layers and superior interface quality, where the interface second-order nonlinearity transitions to bulk-like second-harmonic generation. An effective bulk second-order susceptibility of $\chi_{zzz} = 2.0 \pm 0.2$~pm/V at the wavelength of 1032~nm is achieved, comparable to typical values for conventional monocrystalline nonlinear materials.

physics.app-ph