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Rainer Wallny

Publications and source records attributed to Rainer Wallny.

4 recordsLinked to original sources

Factorizable Normalizing Flows for parameter-dependent density morphing

Normalizing Flows excel at modeling a single fixed density, yet many problems across the sciences, such as high energy physics, instead require modeling how that density deforms as a function of continuous parameters: the strength of a physical effect, a calibration constant, or a source of systematic uncertainty. Learning a separate flow for every parameter configuration quickly becomes intractable, since the number of joint settings grows exponentially with the number of parameters. We introduce Factorizable Normalizing Flows (FNFs), which represent the parameter-dependent density as a fixed, high-fidelity flow for a reference configuration composed with a learnable transformation that is polynomial in the parameters and factorized over them. This structure has a practical consequence: each parameter's effect is learned in isolation, from samples in which that parameter alone is varied. The combined response of many parameters is then recovered by summation at inference, without ever sampling their combinatorially large joint space. On a controlled problem with two interpretable deformations applied jointly to the data, the learned transformation reproduces the true deformations and matches the optimal likelihood, while optional interaction terms capture residual correlations when several parameters vary strongly at once. The resulting model is interpretable, scales linearly with the number of parameters, and keeps the likelihood tractable. This provides a general tool for any inference workflow requiring continuous density morphing, and directly enables the next generation of unbinned likelihood fits in high energy physics.

stat.ML

Profiling systematic uncertainties in Simulation-Based Inference with Factorizable Normalizing Flows

Unbinned likelihood fits maximize the information extracted from experimental data, yet their application in realistic high-dimensional analyses has been fundamentally bottlenecked by the prohibitive computational cost of profiling systematic uncertainties. Furthermore, current machine learning-based inference methods typically estimate scalar parameters, discarding complex high-dimensional correlations. To address this, we propose a general Simulation-Based Inference (SBI) framework that elevates the fit target from scalar parameters to a multivariate Distribution of Interest (DoI), a learnable, invertible transformation of the feature space. We employ Factorizable Normalizing Flows to model systematic variations as parametric deformations, preserving tractability without combinatorial explosion. Crucially, we develop an amortized training strategy that learns the conditional dependence of the DoI on nuisance parameters in a single optimization process, bypassing repetitive training during likelihood scans. To capture the finite-sample statistical variance of the neural network DoI, we introduce a Poisson-bootstrap ensemble, which we marginalize through an averaged likelihood to deliver a complete statistical-plus-systematic uncertainty budget within a single unbinned likelihood. Validated on a synthetic dataset emulating a high-energy physics measurement, our method demonstrates that rigorous, fully profiled unbinned measurements can now be extended to complete differential distributions. By turning the fit into a functional measurement, this approach offers a powerful, unifying framework for a broad range of tasks conventionally treated as distinct problems, from detector calibration and differential cross-sections to unfolding and continuous parameter estimation.

hep-ph

Letter Of Intent for a future $\mu^+ \to \mathrm{e}^+ \gamma$ experiment at the High Intensity Muon Beam facility at PSI

Searches for charged lepton flavor violation in the muon sector stand out among the most sensitive and clean probes for physics beyond the Standard Model. Currently, $\mu^+ \to \mathrm{e}^+ \gamma$ experiments provide the best constraints in this field for a wide range of models while, in the coming years, new experiments investigating the processes of $\mu^+ \to \mathrm{e}^+ \mathrm{e}^+ \mathrm{e}^-$ and $\mu \to \mathrm{e}$ conversion in the nuclear field are anticipated to reach comparable or higher sensitivities. The High-Intensity Muon Beam (HIMB) facility at PSI, which is expected to deliver muon beam intensities up to two orders of magnitude higher than the existing beam lines, offers a unique opportunity to significantly enhance the sensitivity of $\mu^+ \to \mathrm{e}^+ \gamma$ searches. The discovery potential could be substantially boosted and a sensitivity comparable to that of all the other projects could be reestablished, which is essential for discriminating among competing new-physics scenarios should an observation occur in any of the channels. In this document, we express our interest in developing a $\mu^+ \to \mathrm{e}^+ \gamma$ experimental program at HIMB, with the goal of improving, within the next decade, the sensitivity of the $\mu^+ \to \mathrm{e}^+ \gamma$ search by more than one order of magnitude relative to the expected final result of the current leading experiment, MEG II. This effort would ensure that PSI retains its leadership in this field.

hep-ex

Characterization of passive CMOS sensors with RD53A pixel modules

Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry.

physics.ins-det