arXiv subjects

Rajesh Kumar Ulaganathan

Publications and source records attributed to Rajesh Kumar Ulaganathan.

8 recordsLinked to original sources

arXiv2026

Pressure-induced reentrant superconductivity in a misfit layered compound $\mathrm{(SnS)_{1.15}(TaS_2)}$

Misfit layered compounds are natural van der Waals heterostructures in which electronically active transition-metal dichalcogenide layers are decoupled by incommensurate blocking layers, enabling bulk realization of quasi-two-dimensional quantum states. Here we investigate the superconducting, transport,and structural properties of the misfit compound $\mathrm{(SnS)_{1.15}(TaS_2)}$ under pressures up to 150 GPa. The low-pressure superconducting phase is gradually suppressed and disappears near 14.7 GPa,accompanied by increasing residual resistance. Remarkably, a distinct superconducting phase reemerges above 80 GPa and persists to the highest pressures achieved. This reentrant superconductivity follows a pressure-induced sign reversal of the Hall coefficient near 60 GPa and a nonmonotonic evolution of the normal-state resistance, indicating an electronic reconstruction. No structural phase transition is detected over the entire pressure range. Our results demonstrate a pressure-driven electronic reconstruction leading to reentrant superconductivity in a misfit layered compound, establishing pressure as an effective route to engineer superconductivity and electronic states in natural van der Waals heterostructures.

cond-mat.supr-con↗

arXiv2026

Tuning magnetic, lattice, and transport properties in CoNb3S6 via Fe doping

We present a comprehensive investigation of the effects of Fe doping on the lattice dynamics, magnetic ordering, and magneto-transport properties of the intercalated van der Waals antiferromagnets Co1-xFexNb3S6 (x = 0.1 and 0.3). Temperature- and polarization-dependent Raman scattering measurements reveal a pronounced blue shift of the 180 cm-1 phonon mode with increasing Fe concentration, indicating enhanced sensitivity of lattice vibrations to Fe-induced structural and mass effects. While the temperature evolution of the phonon modes is dominated by conventional anharmonic phonon softening, subtle anomalies observed near the Néel temperature for x = 0.1 point to weak spin-phonon coupling. Electrical transport and magnetic susceptibility data show clear signatures of the antiferromagnetic phase transitions at TN ~ 20.5-23.7 K for x = 0.1 and TN ~ 32.0 K for x = 0.3. Out-of-plane magnetization measurements reveal hysteretic behavior with two field-induced transitions for x =0.1, which evolve into a single hysteresis loop at x =0.3, signaling a subtle reconstruction of the magnetic ground state. Magneto-transport measurements for x = 0.1 further display a butterfly-shaped hysteretic magnetoresistance and a weak topological Hall effect; however, both features are strongly suppressed at x = 0.3. These results illustrate the critical role of Fe-induced magnetic structure reconstruction in fine-tuning topological and magnetic transport phenomena in intercalated van der Waals antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Field-Angle Dependence of Phonon Thermal Hall Effect in Na2X2TeO6 (X = Co, Zn)

The mechanism behind thermal Hall effects by phonons, which are observed in various materials, is not clarified despite the dominant contribution as heat carriers. Theoretically, mechanisms based on the intrinsic Berry phase and those on extrinsic impurity-induced scatterings have been proposed, which can be distinguished by comparing the field-angle dependence of the thermal Hall effect and that of the magnetic anisotropy. Here, we investigate the field-angle dependence of the thermal Hall effects in the antiferromagnet Na2Co2TeO6 and its non-magnetic isostructural analogue Na2Zn2TeO6 in the ac plane. We find that the field-angle dependence of the thermal Hall conductivity in both materials well follows that of the out-of-plane magnetization, showing a common mechanism by extrinsic impurity-induced scatterings in both the phonon thermal Hall effect and that enhanced by a coupling with the magnetism.

cond-mat.mtrl-sci↗

arXiv2025

Strong and selective magnon-phonon coupling in van der Waals antiferromagnet CoPS$_3$

The Raman scattering response of the biaxial antiferromagnet CoPS$_3$ has been investigated as a function of both magnetic field and temperature. The peaks observed in the low-frequency spectral range (90--200~cm$^{-1}$) have been identified as hybrid magnon--phonon excitations. The energies of the bare magnon and phonon modes, as well as the effective coupling strengths between different excitation pairs, have been determined. The strong and selective magnon--phonon interaction largely accounts for the pronounced splitting of two phonon-like modes observed at 152~cm$^{-1}$ and 158~cm$^{-1}$ in the antiferromagnetic phase of CoPS$_3$. Based on the identification of bare magnon excitations and their magnetic-field dependence, we propose an updated set of parameters for the effective exchange ($J_{\mathrm{eff}} = 9.9$~meV) and biaxial magnetic anisotropy ($D = 4.3$~meV and $E = -0.7$~meV) and advocate for an apparent anisotropic $g$-factor ($g_x = g_y = 2$, $g_z = 4$) in the CoPS$_3$ antiferromagnet.

cond-mat.mes-hall↗

arXiv2025

Manipulation of anisotropic Zhang-Rice exciton in van der Waals antiferromagnets NiPS3-xSex by anion substitution

Spin-entangled excitons have emerged as intriguing quasi-particle excitations in van der Waals magnets. Among them, the recently observed Zhang-Rice (ZR) exciton in NiPS3 has garnered significant research interest due to its strong correlation with magnetic ordering and its exceptionally long-lived coherence. Herein, we present our in-depth temperature- and polarization-dependent photoluminescence (PL) study of anion-substituted NiPS3-xSex (x=0.008,0.03,0.06 and 0.09 ) to explore the nature and dynamics of the ZR exciton. Our results reveal that, similar to the cation substitution, a small percentage of anion substitution effectively destroys and modulates the ZR exciton, as evidenced by the emergence of a weaker, lower-energy PL peak in addition to the primary ZR peak. The primary and secondary PL peaks exhibit the same anisotropic polarization but differ in their peak energy shift and intensity evolution with Se substitution, suggesting varying charge transfers of p-orbitals. Notably, the ZR exciton undergoes rapid thermal destabilization at much lower temperatures than two-magnon excitations, highlighting that p-orbital inhomogeneity beyond the magnetic ordering structure is a decisive factor in driving its thermal quenching.

cond-mat.mtrl-sci↗

arXiv2024

Interplay between magnetic and lattice excitations and emergent multiple phase transitions in MnPSe3-xSx

The intricate interplay between spin and lattice degrees of freedom in two-dimensional magnetic materials plays a pivotal role in modifying their magnetic characteristics, engendering hybrid quasiparticles, and implementing functional devices. Herein, we present our comprehensive and in-depth investigations on magnetic and lattice excitations of MnPSe3-xSx (x = 0, 0.5, and 1.5) alloys, utilizing temperature- and polarization-dependent Raman scattering. Our experimental results reveal the occurrence of multiple phase transitions, evidenced by notable changes in phonon self-energy and the appearance or splitting of phonon modes. These emergent phases are tied to the development of long and short-range spin-spin correlations, as well as to spin reorientations or magnetic instabilities. Our analysis of two-magnon excitations as a function of temperature and composition showcases their hybridization with phonons whose degree weakens with increasing x. Moreover, the suppression of spin-dependent phonon intensity in chemically most-disordered MnPSe3-xSx (x = 1.5) suggests that chalcogen substitution offers a control knob of tuning spin and phonon dynamics by modulating concurrently superexchange pathways and a degree of trigonal distortions.

cond-mat.mtrl-sci↗

arXiv2023

A High-Performance Quasi-1D MoS$_2$ Nanoribbon Photodetector

Molybdenum disulfide (MoS$_2$) nanoribbons have attracted increased interest due to their properties which can be tailored by tuning their dimensions. Herein, we demonstrate the growth of highly crystalline quasi-one-dimensional (1D)MoS$_2$ nanoribbons and aligned 3D triangular crystals with predominantly 3R or 2H stacking orientation. The synthesis method relies on the reaction between an ultra-thin MoO3-x film grown by Pulsed Laser Deposition (PLD) and NaF in a sulfur-rich environment. The quasi-1D MoS$_2$ nanoribbons can reach several micrometres in length, and feature single-layer (1L) edges aligned with the nanoribbon core, thereby forming a 1L-multilayer (ML) homojunction due to abrupt discontinuity in thickness. The 1L edges of the nanostructures show a pronounced second harmonic generation (SHG) due to the symmetry breaking, in contrast to the centrosymmetric ML structure, which is unsusceptible to the second-order nonlinear process. A pronounced splitting of the Raman spectra was observed in quasi-1D MoS$_2$ nanoribbons arising from distinct contributions from the 2D edges and a multilayer core. Nanoscale imaging reveals the blue-shifted exciton emission of the monolayer nanoribbon compared to the triangular MoS$_2$ counterpart due to built-in local strain and disorder. We further report on a versatile and ultrasensitive photodetector made of a single quasi-1D MoS$_2$ nanoribbon with a maximum responsivity of 872 A/W at the wavelength of 532 nm. The optoelectronic performance of the MoS$_2$ nanoribbon is superior to the previously reported single-nanoribbon photodetectors. Our findings can inspire the design of TMD semiconductors with tunable geometries for efficient optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at room temperature. The weak gate tuning behavior in the depletion regime of SnS devices is explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from intrinsic defects induced holes in SnS. Through etching and n-type surface doping by Cs2CO3 to reduce/compensate the not-gatable holes near SnS flake's top surface, the devices gained an order of magnitude improvement in the ON-OFF ratio and hole Hall mobility ~ 100 cm$^2$/Vs at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of carriers in the semiconductor.

cond-mat.mes-hall↗