SearcharxivSearch

arXiv subjects

Rajesh L. Patel

Publications and source records attributed to Rajesh L. Patel.

2 recordsLinked to original sources

A defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ($T_2$) is 246(7) $μ$s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

cond-mat.mtrl-sci

Microscopic processes during ultra-fast laser generation of Frenkel defects in diamond

Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mechanisms and precision engineering of vacancies is desirable. We present a theoretical and experimental study into the ultra-fast laser generation of vacancy-interstitial pairs (Frenkel defects) in diamond. The process is described by a set of coupled rate equations of the pulsed laser interaction with the material and of the non-equilibrium dynamics of charge carriers during and in the wake of the pulse. We find that a model for Frenkel defect generation via the recombination of a bound biexciton as the electron plasma cools provides good agreement with experimental data, reproducing an effective non-linearity of $\sim$ 40 for Frenkel defect generation with respect to laser pulse energy.

cond-mat.mtrl-sci