arXiv subjects

Rajesh Mandal

Publications and source records attributed to Rajesh Mandal.

6 recordsLinked to original sources

arXiv2026

Thickness-dependent crack suppression and wrinkle formation in freestanding BaTiO3 membranes

Freestanding ferroelectric oxide membranes offer a promising route toward silicon-integrated low-power electronic and memory devices, but reproducible membrane quality remains challenging, particularly in ultrathin BaTiO3 (BTO), where cracking and wrinkling hinder integration. Here, we show that crack and wrinkle formation in released BaTiO3 membranes can be tuned by jointly controlling oxide thickness and polymer support thickness. Reducing the BaTiO3 thickness from 15 nm to 5 nm suppresses large-area, optically visible cracking across the analysed regions, but promotes dense nanoscale wrinkling, revealing a trade-off between fracture mitigation and morphological instability. In 10 nm BaTiO3 membranes, polymer support thickness further modulates wrinkling, with an intermediate thickness reducing wrinkle density. Piezoresponse force microscopy reveals time-dependent evolution of written contrast after release, indicating that apparent ferroelectric response is influenced by polarization switching, post-release morphology, interfacial contact, charge screening, and strain relaxation. These results establish processing guidelines for integrating freestanding ferroelectrics into future devices.

cond-mat.mtrl-sci↗

arXiv2026

Designing dislocation-driven polar vortex networks in twisted perovskites

Twisting two atomic layers produces a geometric moire pattern, but bonding-induced interfacial reconstruction fundamentally transforms this into an ordered dislocation network - a distinction obscured in weakly-bonded van der Waals systems. Although in-plane topological vortex nanostructures arising from twisting-induced lateral strain modulation have been linked to periodic moire patterns in freestanding perovskite layers and 2D bilayers, their coupling to the interfacial dislocation network in twisted layers remains unresolved. Here we demonstrate that twisting freestanding SrTiO3 layers undergo interfacial reconstruction into a network of screw dislocations, accompanied by the emergence of in-plane topological vortices. Unlike in previous reports, these vortices are associated with the periodicity of the dislocation network rather than with geometric moire patterns. Four-dimensional scanning transmission electron microscopy (4D-STEM) reveals long-range ordered vortex-antivortex arrays with nearly continuous polarisation rotation. A machine-learning interatomic potential, trained on first-principles calculations, together with phase-field modelling, confirms that competing strains within the dislocation network stabilize polar vortex-antivortex pairs and drive the emergence of an electronic superlattice with a well-defined periodicity. Our results establish twist-controlled dislocation networks as a new and versatile route to designing local polar and electronic structures in oxide materials.

cond-mat.mtrl-sci↗

arXiv2024

Low-power Rapid Planar Superconducting Logic Devices

The rapid-pace growing demand for high-performance computation and big-data manipulation entails substantial increase in global power consumption, and challenging thermal management. Thus, there is a need in allocating competitive alternatives for complementary metal-oxide-semiconductor (CMOS) technologies. Superconducting platforms, such as rapid single flux quantum (RSFQ) lack electric resistance and excel in power efficiency and time performance. However, traditional RSFQs require 3D geometry for their Josephson junctions (JJs) imposing a large footprint, and hence preventing device miniaturization and increasing processing time. Here, we demonstrate that RSFQ logic circuits of planar geometry with weak-link bridges are scalable, relatively easy to process and are CMOS-compatible on a Si chip. Universal logic gates, as well as combinational arithmetic circuiting that are based on these devices are demonstrated. The power consumption and processing time of these logic circuits were as low as 0.8 nW and 13 ps, an order of magnitude improvement with respect to the equivalent traditional-RSFQ logic circuits and two orders of magnitude with respect to CMOS. The competitive performance of planar RSFQ logic circuits renders them for promising CMOS substitutes, especially in the supercomputational realm.

cond-mat.supr-con↗

arXiv2020

Enhanced electrocatalytic oxygen evolution activity in geometrically designed SrRuO3 thin films

For generation of sustainable, clean and highly efficient energy, the electrocatalytic oxygen evolution reaction represents an attractive platform, thus inviting immense research activities in recent years. However, designing the catalyst with enhanced electrocatalytic activity remains one of the major challenges. Here, we examined the oxygen evolution reaction activities of geometrically designed (with and without step-textured morphology) thin films of an electrocatalytically active correlated metallic SrRuO3 perovskite grown on c- and r-plane sapphire substrates. On c-plane sapphire, as compared to the uniform surface, the step-textured films endowed with active Ru-sites show remarkable decrease in the overpotential (25 mV). Interestingly, the behavior is opposite for the r-plane case, highlighting the significance of the active sites, in addition with the polar surface termination of selective crystal facets. Density functional theory calculation confirms the favorable energy reaction pathway for the active site dependent enhancement in OER. Our strategy might pave the way towards designing the surfaces of various oxide thin films for high performance energy conversion based devices.

cond-mat.mtrl-sci↗

arXiv2019

Temperature dependence of the Spin Seebeck effect in a mixed valent manganite

We report on temperature dependent measurements of the Longitudinal Spin Seebeck Effect (LSSE) in the mixed valent manganite La$_{0.7}$Ca$_{0.3}$MnO$_3$. By disentangling the contribution arising due to the Anisotropic Nernst effect, we observe that these two thermally driven phenomena vary disparately with temperature. In a narrow low temperature regime, the LSSE exhibits a $T^{0.55}$ dependence, which matches well with that predicted by the magnon-driven spin current model. Across the double exchange driven paramagnetic-ferromagnetic transition, the LSSE exponent is significantly higher than the magnetization one. These observations highlights the importance of individually ascertaining the temperature evolution of different mechanisms which contribute to the measured spin Seebeck signal.

cond-mat.str-el↗

arXiv2018

Nature of magnetism and transport in BxCyNz thin films: The intriguing role of nitrogen defects in the electronic structure

Boron carbonitride (BxCyNz) represents an interesting family of materials containing all light elements and two dimensional graphene like hybrid layers. Although rich literature exists on this peculiar material in chemically processed form, there are relatively fewer reports on device application-worthy thin film form. This form also offers a natural platform for basic studies on important aspects such as magnetism and transport, which have attracted attention in the context of ferromagnetism in doped and defect carbon systems. Thus, in this work we have grown thin films of this compound using Pulsed Laser Deposition (PLD) method, and investigated their magnetic and transport properties in their entirety along with the detailed electronic structure using various spectroscopic techniques like X-ray photoelectron spectroscopy (XPS), Valence Band Spectroscopy (VBS) and X-ray absorption near edge spectroscopy (XANES). In depth analysis of the typical role of dopants and defects, especially the prevalent nitrogen defects, is elucidated using Density Functional Theory (DFT) calculations to understand the experimental observations. A dramatic crossover in the transport mechanism of charge carriers is observed in this system with the change in doping level of specific nitrogen defects. A robust and high saturation magnetization is achieved in BCN films which is higher by almost hundred times as compared to that in similarly grown undoped carbon film. An anomalous transition and increase in coercive field is also observed at low temperature. A careful analysis brings out the intriguing role of specific nitrogen defects in defining the peculiar nature and concentration dependence of the physical properties of this system.

cond-mat.mtrl-sci↗