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Rajibul Islam

Publications and source records attributed to Rajibul Islam.

At least 37 records · Page 2Linked to original sources
arXiv2023

Investigations of 2D ion crystals in a hybrid optical cavity trap for quantum information processing

We numerically investigate a hybrid trapping architecture for 2D ion crystals using static electrode voltages and optical cavity fields for in-plane and out-of-plane confinements, respectively. By studying the stability of 2D crystals against 2D-3D structural phase transitions, we identify the necessary trapping parameters for ytterbium ions. Multiple equilibrium configurations for 2D crystals are possible, and we analyze their stability by estimating potential barriers between them. We find that scattering to anti-trapping states limits the trapping lifetime, which is consistent with recent experiments employing other optical trapping architectures. These 2D ion crystals offer an excellent platform for quantum simulation of frustrated spin systems, benefiting from their 2D triangular lattice structure and phonon-mediated spin-spin interactions. Quantum information processing with tens of ions is feasible in this scheme with current technologies.

quant-ph↗
arXiv2023

Preserving a qubit during adjacent measurements at a few micrometers distance

Protecting a quantum object against irreversible accidental measurements from its surroundings is necessary for controlled quantum operations. This becomes especially challenging or unfeasible if one must simultaneously measure or reset a nearby object's quantum state, such as in quantum error correction. In atomic systems - among the most established quantum information processing platforms - current attempts to preserve qubits against resonant laser-driven adjacent measurements waste valuable experimental resources such as coherence time or extra qubits and introduce additional errors. Here, we demonstrate high-fidelity preservation of an `asset' ion qubit while a neighboring `process' qubit is reset or measured at a few microns distance. We achieve $< 1\times 10^{-3}$ probability of accidental measurement of the asset qubit while the process qubit is reset, and $< 4\times 10^{-3}$ probability while applying a detection beam on the same neighbor for experimentally demonstrated fast detection times, at a distance of $6\ \rm{μm}$ or four times the addressing Gaussian beam waist. These low probabilities correspond to the preservation of the quantum state of the asset qubit with fidelities above $99.9\%$ (state reset) and $99.6\%$ (state measurement). Our results are enabled by precise wavefront control of the addressing optical beams while utilizing a single ion as a quantum sensor of optical aberrations. Our work demonstrates the feasibility of in-situ state reset and measurement operations, building towards enhancements in the speed and capabilities of quantum processors, such as in simulating measurement-driven quantum phases and realizing quantum error correction.

quant-ph↗
arXiv2023

Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$

Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication.

cond-mat.mes-hall↗
arXiv2023

A guided light system for agile individual addressing of Ba$^+$ qubits with $10^{-4}$ level intensity crosstalk

Trapped ions are one of the leading platforms for quantum information processing, exhibiting the highest gate and measurement fidelities of all contending hardware. In order to realize a universal quantum computer with trapped ions, independent and parallel control over the state of each qubit is necessary. The manipulation of individual qubit states in an ion chain via stimulated Raman transitions generally requires light focused on individual ions. In this manuscript, we present a novel, guided-light individual addressing system for hyperfine Ba$^+$ qubits. The system takes advantage of laser-written waveguide technology, enabled by the atomic structure of Ba$^+$, allowing the use of visible light to drive Raman transitions. Such waveguides define the spatial mode of light, suppressing aberrations that would have otherwise accumulated in a free-space optics set up. As a result, we demonstrate a nearest neighbour relative intensity crosstalk on the order of 10$^{-4}$, without any active aberration compensation. This is comparable to or better than other previous demonstrations of individual addressing. At the same time, our modular approach provides independent and agile control over the amplitude, frequency, and phase of each channel; combining the strengths of previous implementations.

quant-ph↗
arXiv2023

Sign change of the anomalous Hall effect and the anomalous Nernst effect in Weyl semimetal CeAlSi

We report the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) data for the non-collinear Weyl semimetal CeAlSi. The anomalous Hall conductivity (σ_ij^A) was measured for two different orientations of the magnetic field (B), namely σ_yz^A for B II a and σ_xy^A for B II c, where a and c denote the crystallographic axes. We find that σ_xy^A and σ_yz^A are of opposite sign and both are large below the Curie temperature (T_C). In the paramagnetic phase, σ_xy^A raises even more and goes through a maximum at T ~ 170 K, whereas the absolute value of σ_yz^A decreases with increasing temperature. The origin of the sign difference between σ_xy^A and σ_yz^A was attributed to the reconstruction of the band structure under the variation of the spin orientation. Further, in a system where humps in the AHE are present and scalar spin chirality is zero, we show that the k-space topology plays an important role to determine the transport properties at both low and high temperatures. We also observed the anomalous contribution in the Nernst conductivity (α_xy^A) measured for B II c. α_xy^A/T turns out to be sizeable in the magnetic phase and above T_C slowly decreases with temperature. We were able to recreate the temperature dependences of σ_xy^A and α_xy^A/T in the paramagnetic phase using a single band toy-model assuming a non-zero Berry curvature in the vicinity of the Weyl node. A decisive factor appears to be a small energy distance between the Fermi level and a Weyl point.

cond-mat.str-el↗
arXiv2023

Engineering axion insulator phase in superlattices with inversion symmetry breaking

We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnTe, which is the ground state amongst all magnetic configurations. Defining $T$ as the time-reversal symmetry, this axion insulator phase is protected by a magnetic two-fold rotational symmetry $C_2{\cdot}T$. The axion insulator phase evolves into a trivial insulator as we increase the thickness of the magnetic layers. By switching the Néel vector direction into the $ab$ plane, the system realizes different antiferromagnetic topological insulators depending on the thickness of MnTe. These phases feature gapless surface Dirac cones shifted away from high-symmetry points on surfaces perpendicular to the Néel vector direction of the magnetic layers. In the presence of ferromagnetism, the system realizes a magnetic Weyl semimetal and a ferromagnetic semimetal for out-of-plane and in-plane magnetization directions, respectively. We observe large anomalous Hall conductivity in the presence of ferromagnetism in the three-dimensional superlattice.

cond-mat.mtrl-sci↗
arXiv2023

Correlation-driven topological transition in Janus VSiGeP2As2

The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z=P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), while in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.

cond-mat.mtrl-sci↗
arXiv2023

Interfacial Dzyaloshinskii-Moriya interaction in epitaxial W/Co/Pt multilayers

Dzyaloshinskii-Moriya interaction (DMI) manifesting in asymmetric layered ferromagnetic films gives rise to non-colinear spin structures stabilizing magnetization configurations with nontrivial topology. In this work magnetization reversal, domain structure, and strength of DMI are related with the structure of W/Co/Pt multilayers grown by molecular beam epitaxy. Applied growth method enables fabrication of layered systems with higher crystalline quality than commonly applied sputtering techniques. As a result, a high value of D coefficient was determined from the aligned magnetic domain stripe structure, substantially exceeding 2 mJ/m2. The highest value of DMI value D$_{eff}$ = 2.64mj/m2 and strength of surface DMI parameter DS = 1.83pJ/m for N=10 has been observed. Experimental results coincide precisely with those obtained from structure based micromagnetic modelling and density functional theory calculations performed for well-defined layered stacks. This high value of DMI strength originates from dominating contributions of the interfacial atomic Co layers and additive character from both interface types.

cond-mat.mtrl-sci↗
arXiv2023

Topological transition in Pb1-xSnxSe using Meta-GGA

We calculate the mirror Chern number (MCN) and the band gap for the alloy Pb1-xSnxSe as a function of the concentration x by using virtual crystalline approximation. We use the electronic structure from the relativistic density functional theory calculations in the Generalized-Gradient- Approximation (GGA) and meta-GGA approximation. Using the modified Becke-Johnson meta- GGA functional, our results are comparable with the available experimental data for the MCN as well as for the band gap. We advise to use modified Becke-Johnson approximation with the parameter c=1.10 to describe the transition from trivial to topological phase for this class of compounds.

cond-mat.mtrl-sci↗
arXiv2022

Unprotected edge modes in quantum spin Hall insulator candidate materials

The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also support additional edge states, which can contribute to the scattering and the transport. We use first-principles calculations to derive an effective tight-binding model for HgTe/CdTe, HgS/CdTe and InAs/GaSb heterostructures, and we show that all these materials support additional edge states which are sensitive to the edge termination. We trace the microscopic origin of these states back to a minimal model supporting flat bands with a nontrivial quantum geometry that gives rise to polarization charges at the edges. We show that the polarization charges transform into the additional edge states when the flat bands are coupled to each other and to the other states to form the Hamiltonian describing the full heterostructure. Interestingly, in the HgTe/CdTe quantum wells the additional edge states are far away from the Fermi level so that they do not contribute to the transport but in the HgS/CdTe and InAs/GaSb heterostructures they appear within the bulk energy gap giving rise to the possibility of multimode edge transport. Finally, we demonstrate that because these additional edge modes are non-topological it is possible to remove them from the bulk energy gap by modifying the edge potential for example with the help of a side gate or chemical doping.

cond-mat.mes-hall↗
arXiv2022

Switchable large-gap quantum spin Hall state in two-dimensional MSi$_2$Z$_4$ materials class

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi$_2$Z$_4$ (M = Mo or W and Z = P or As) materials family with $1T^\prime$ structure. A structural distortion in the $2H$ phase drives a band inversion between the metal (Mo/W) $d$ and $p$ states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as $\sim 204$ meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi$_2$Z$_4$ materials family with $1T^\prime$ structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity.

cond-mat.mes-hall↗
arXiv2022

Fast and high-yield fabrication of axially symmetric ion-trap needle electrodes via two step electrochemical etching

Despite the progress in building sophisticated microfabricated ion traps, Paul traps employing needle electrodes retain their significance due to the simplicity of fabrication while producing high-quality systems suitable for quantum information processing, atomic clocks etc. For low noise operations such as minimizing `excess micromotion', needles should be geometrically straight and aligned precisely with respect to each other. Self-terminated electrochemical etching, previously employed for fabricating ion trap needle electrodes employs a sensitive and time-consuming technique resulting in a low success rate of usable electrodes. Here we demonstrate an etching technique for quick fabrication of straight and symmetric needles with a high success rate and a simple apparatus with reduced sensitivity to alignment imperfections. The novelty of our technique comes from using a two-step approach employing turbulent etching for fast shaping and slow etching/polishing for subsequent surface finish and tip cleaning. Using this technique, needle electrodes for an ion-trap can be fabricated within a day, significantly reducing the setup time for a new apparatus. The needles fabricated via this technique have been used in our ion-trap to achieve trapping lifetimes of several months.

physics.ins-det↗
arXiv2022

Ion Trap Long-Range XY Model for Quantum State Transfer and Optimal Spatial Search

Linear ion trap chains are a promising platform for quantum computation and simulation. The XY model with long-range interactions can be implemented with a single side-band Molmer-Sorensen scheme, giving interactions that decay as $1/r^α$, where $α$ parameterises the interaction range. Lower $α$ leads to longer range interactions, allowing faster long-range gate operations for quantum computing. However, decreasing $α$ causes an increased generation of coherent phonons and appears to dephase the effective XY interaction model. We characterise and show how to correct for this effect completely, allowing lower $α$ interactions to be coherently implemented. Ion trap chains are thus shown to be a viable platform for spatial quantum search in optimal $O(\sqrt{N})$ time, for $N$ ions. Finally, we introduce a $O(\sqrt{N})$ quantum state transfer protocol, with a qubit encoding that maintains a high fidelity.

quant-ph↗
arXiv2022

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

cond-mat.mtrl-sci↗
arXiv2022

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors.

cond-mat.mtrl-sci↗
arXiv2021

Limits on atomic qubit control from laser noise

Technical noise present in laser systems can limit their ability to perform high fidelity quantum control of atomic qubits. The ultimate fidelity floor for atomic qubits driven with laser radiation is due to spontaneous emission from excited energy levels. The goal is to suppress the technical noise from the laser source to below the spontaneous emission floor such that it is no longer a limiting factor. It has been shown that the spectral structure of control noise can have a large influence on achievable control fidelities, while prior studies of laser noise contributions have been restricted to noise magnitudes. Here, we study the unique spectral structure of laser noise and introduce a new metric that determines when a stabilised laser source has been optimised for quantum control of atomic qubits. We find requirements on stabilisation bandwidths that can be orders of magnitude higher than those required to simply narrow the linewidth of a laser. We introduce a new metric, the $χ$-separation line, that provides a tool for the study and engineering of laser sources for quantum control of atomic qubits below the spontaneous emission floor.

quant-ph↗
arXiv2021

Simulating a measurement-induced phase transition for trapped ion circuits

The rise of programmable quantum devices has motivated the exploration of circuit models which could realize novel physics. A promising candidate is a class of hybrid circuits, where entangling unitary dynamics compete with disentangling measurements. Novel phase transitions between different entanglement regimes have been identified in their dynamical states, with universal properties hinting at unexplored critical phenomena. Trapped ion hardware is a leading contender for the experimental realization of such physics, which requires not only traditional two-qubit entangling gates, but a constant rate of local measurements accurately addressed throughout the circuit. Recent progress in engineering high-precision optical addressing of individual ions makes preparing a constant rate of measurements throughout a unitary circuit feasible. Using tensor network simulations, we show that the resulting class of hybrid circuits, prepared with native gates, exhibits a volume-law to area-law transition in the entanglement entropy. This displays universal hallmarks of a measurement-induced phase transition. Our simulations are able to characterize the critical exponents using circuit sizes with tens of qubits and thousands of gates. We argue that this transition should be robust against additional sources of experimental noise expected in modern trapped ion hardware, and will rather be limited by statistical requirements on post selection. Our work highlights the powerful role that tensor network simulations can play in advancing the theoretical and experimental frontiers of critical phenomena.

quant-ph↗
arXiv2021

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi$_2$Z$_4$ monolayers is found to generate dynamically stable bilayer and bulk materials with thickness-dependent properties. When spin-orbit coupling (SOC) is included in the computations, MSi$_2$N$_4$ monolayers display indirect bandgaps and large spin-split states at the $K$ and $K'$ symmetry points at the corners of the Brillouin zone with nearly 100\% spin polarization. The spins are locked in opposite directions along an out-of-the-plane direction at $K$ and $K'$, leading to spin-valley coupling effects. As expected, spin polarization is absent in the pristine bilayers due to the presence of inversion symmetry, but it can be induced via an external out-of-plane electric field much like the case of Mo(W)S$_2$ bilayers. A transition from an indirect to a direct bandgap can be driven by replacing N by As in MSi$_2$(N, As)$_4$ monolayers. Our study indicates that the MSi$_2$Z$_4$ materials can provide a viable alternative to the MoS$_2$ class of 2D materials for valleytronics and optoelectronics applications.

cond-mat.mes-hall↗