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Raman Sankar

Publications and source records attributed to Raman Sankar.

At least 55 records · Page 3Linked to original sources
arXiv2017

Quasiparticle Interference in ZrSiS - Strongly Band-Selective Scattering Depending on Impurity Lattice Site

Scanning tunneling microscopy visualizations of quasiparticle interference (QPI) enable powerful insights into the k-space properties of superconducting, topological, Rashba and other exotic electronic phases, but their reliance on impurities acting as scattering centers is rarely scrutinized. Here we investigate QPI at the vacuum-cleaved (001) surface of the Dirac semimetal ZrSiS. We find that interference patterns around impurities located on the Zr and S lattice sites appear very different, and can be ascribed to selective scattering of different sub-sets of the predominantly Zr 4d-derived band structure, namely the m = 0 and m = +/-1 components. We show that the selectivity of scattering channels requires an explanation beyond the different bands' orbital characteristics and their respective charge density distributions over Zr and S lattices sites. Importantly, this result shows that the usual assumption of generic scattering centers allowing observations of quasiparticle interference to shed light indiscriminately and isotropically upon the \textit{q}-space of scattering events does not hold, and that the scope and interpretation of QPI observations can therefore be be strongly contingent on the material defect chemistry. This finding promises to spur new investigations into the quasiparticle scattering process itself, to inform future interpretations of quasiparticle interference observations, and ultimately to aid the understanding and engineering of quantum electronic transport properties.

cond-mat.mtrl-sci↗
arXiv2017

Anomalous Acoustic Plasmon Mode from Topologically Protected States

Plasmons, the collective excitations of electrons in the bulk or at the surface, play an important role in the properties of materials, and have generated the field of Plasmonics. We report the observation of a highly unusual acoustic plasmon mode on the surface of a three-dimensional topological insulator (TI), Bi2Se3, using momentum resolved inelastic electron scattering. In sharp contrast to ordinary plasmon modes, this mode exhibits almost linear dispersion into the second Brillouin zone and remains prominent with remarkably weak damping not seen in any other systems. This behavior must be associated with the inherent robustness of the electrons in the TI surface state, so that not only the surface Dirac states but also their collective excitations are topologically protected. On the other hand, this mode has much smaller energy dispersion than expected from a continuous media excitation picture, which can be attributed to the strong coupling with surface phonons.

cond-mat.mtrl-sci↗
arXiv2017

Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures

Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity effect in the bulk states of Bi2Se3 induced by NbSe2. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi2Se3 on NbSe2 sample, the bulk state gap value near the top surface is ~ 159 μeV, while the second gap value is ~ 120 μeV at 40 mK. The second gap value decreased with increasing Bi2Se3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the same for different Bi2Se3 thicknesses. It is plausible that this is due to superconductivity in Bi2Se3 topological surface states induced through the bulk states. The two induced gaps in the PCS measurement are consistent with the three-dimensional bulk state and the two-dimensional surface state superconducting gaps observed in the angle-resolved photoemission spectroscopy (ARPES) measurement.

cond-mat.supr-con↗
arXiv2017

Observation of surface superstructure induced by systematic vacancies in the topological Dirac semimetal Cd$_{3}$As$_{2}$

The Dirac semimetal phase found in Cd$_{3}$As$_{2}$ is protected by a $C_{4}$ rotational symmetry derived from a corkscrew arrangement of systematic Cd vacancies in its complicated crystal structure. It is therefore surprising that no microscopic observation, direct or indirect, of these systematic vacancies has so far been described. To this end, we revisit the cleaved (112) surface of Cd$_{3}$As$_{2}$ using a combined approach of scanning tunneling microscopy and \textit{ab initio} calculations. We determine the exact position of the (112) plane at which Cd$_{3}$As$_{2}$ naturally cleaves, and describe in detail a structural periodicity found at the reconstructed surface, consistent with that expected to arise from the systematic Cd vacancies. This reconciles the current state of microscopic surface observations with those of crystallographic and theoretical models, and demonstrates that this vacancy superstructure, central to the preservation of the Dirac semimetal phase, survives the cleavage process and retains order at the surface.

cond-mat.mtrl-sci↗
arXiv2017

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ~5 - 10 cm$^2$/Vs. However, the devices showed appreciable OFF state conductance and an ON-OFF ratio ~10 at room temperature. The weak gate tuning behavior in the depletion regime of SnS devices is explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from intrinsic defects induced holes in SnS. Through etching and n-type surface doping by Cs2CO3 to reduce/compensate the not-gatable holes near SnS flake's top surface, the devices gained an order of magnitude improvement in the ON-OFF ratio and hole Hall mobility ~ 100 cm$^2$/Vs at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of carriers in the semiconductor.

cond-mat.mes-hall↗
arXiv2016

Tunability of the topological nodal-line semimetal phase in ZrSiX-type materials

The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X = S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises of the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center ($Γ$) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-$Γ$-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling (SOC) strength via the X anion.

cond-mat.mes-hall↗
arXiv2016

Superconducting Topological Surface States in Non-centrosymmetric Bulk Superconductor PbTaSe2

The search for topological superconductors (TSCs) is one of the most urgent contemporary problems in condensed matter systems. TSCs are characterized by a full superconducting gap in the bulk and topologically protected gapless surface (or edge) states. Within each vortex core of TSCs, there exist the zero energy Majorana bound states, which are predicted to exhibit non-Abelian statistics and to form the basis of the fault-tolerant quantum computation. So far, no stoichiometric bulk material exhibits the required topological surface states (TSSs) at Fermi level combined with fully gapped bulk superconductivity. Here, we report atomic scale visualization of the TSSs of the non-centrosymmetric fully-gapped superconductor, PbTaSe2. Using quasiparticle scattering interference (QPI) imaging, we find two TSSs with a Dirac point at E~1.0eV, of which the inner TSS and partial outer TSS cross Fermi level, on the Pb-terminated surface of this fully gapped superconductor. This discovery reveals PbTaSe2 as a promising candidate as a TSC.

cond-mat.supr-con↗
arXiv2016

Topological quantum phase transition and superconductivity induced by pressure in the bismuth tellurohalide BiTeI

A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor BiTeI with giant Rashba spin splitting. In this work, the evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr while the resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that the superconductivity may develop from the multi-valley semiconductor phase. The superconducting transition temperature Tc increases with applied pressure and reaches a maximum value of 5.2 K at 23.5 GPa for BiTeI (4.8 K at 31.7 GPa for BiTeBr), followed by a slow decrease. Our results demonstrate that BiTeX (X = I, Br) compounds with non-trivial topology of electronic states display new ground states upon compression.

cond-mat.supr-con↗
arXiv2016

Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd

Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first principles calculations demonstrate the existence of the spin polarized surface states at high-binding energy. The absence of such spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behavior on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials.

cond-mat.mes-hall↗
arXiv2016

Observation of Topological Nodal Fermion Semimetal Phase in ZrSiS

Unveiling new topological phases of matter is one of the current objectives in condensed matter physics. Recent experimental discoveries of Dirac and Weyl semimetals prompt to search for other exotic phases of matter. Here we present a systematic angle-resolved photoemission spectroscopy (ARPES) study of ZrSiS, a prime topological nodal semimetal candidate. Our wider Brillouin zone (BZ) mapping shows multiple Fermi surface pockets such as the diamond-shaped Fermi surface, ellipsoidal-shaped Fermi surface, and a small electron pocket encircling at the zone center (G) point, the M point and the X point of the BZ, respectively. We experimentally establish the spinless nodal fermion semimetal phase in ZrSiS, which is supported by our first-principles calculations. Our findings evidence that the ZrSiS-type of material family is a new platform to explore exotic states of quantum matter, while these materials are expected to provide an avenue for engineering two-dimensional topological insulator systems.

cond-mat.mes-hall↗
arXiv2016

Topological Dirac States and Pairing Correlations in the Non-Centrosymmetric Superconductor PbTaSe2

Superconductivity in topological band structures is a platform for many novel exotic quantum phenomena such as emergent supersymmetry. This potential nourishes the search for topological materials with intrinsic superconducting instabilities, in which Cooper pairing is introduced to electrons with helical spin texture such as the Dirac states of topological insulators and Dirac Semimetals, forming a natural topological superconductor of helical kind. We employ first-principles calculations, ARPES experiments and new theoretical analysis to reveal that PbTaSe2, a non-centrosymmetric superconductor, possesses a nonzero Z2 topological invariant and fully spin-polarized Dirac states. Moreover, we analyze the phonon spectrum of PbTaSe2 to show how superconductivity can emerge due to a stiffening of phonons by the Pb intercalation, which diminishes a competing charge-density-wave instability. Our work establishes PbTaSe2 as a stoichiometric superconductor with nontrivial Z2 topological band structure, and shows that it holds great promise for studying novel forms of topological superconductivity not realized previously.

cond-mat.mes-hall↗
arXiv2015

Intrinsic electron mobility exceeding 1000 cm$^2$/Vs in multilayer InSe FETs

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe is not only a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multi-layer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the devices' field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 77-300K fall in the range of 0.1-2.0$\times$10$^3$ cm$^2$/Vs, which are comparable or better than the state of the art FETs made of 2D transition metal-dichalcogenides.

cond-mat.mes-hall↗
arXiv2015

Single crystal growth and physical property characterization of PbTaSe2 as a noncentrosymmetric type-II superconductor

The single crystal growth and superconducting properties of PbTaSe2 with non-centrosymmetric crystal structure is reported. Using the chemical vapor transport (CVT) technique, PbTaSe2 crystallizes in a layered structure and the crystal symmetry has been shown belonging to a non-centrosymmetric space group P6-m2 confirmed by the consistent band picture near the Fermi level between the angle-resolved photoemission spectrum (ARPES) and theoretical calculations. Superconductivity with Tc =3.83 K has been characterized fully with electrical resistivity \r{ho}(T), magnetic susceptibility \c{hi}(T), and specific heat C(T) measurements using single crystal samples. The superconducting anisotropy, electron-phonon coupling λep, superconducting energy gap Δ0, and the specific heat jump ΔC/λTc at Tc confirms that PbTaSe2 can be categorized as a weakly coupled type-II superconductor.

cond-mat.supr-con↗
arXiv2015

Experimental discovery of a topological Weyl semimetal state in TaP

Weyl semimetals are expected to open up new horizons in physics and materials science because they provide the first realization of Weyl fermions and exhibit protected Fermi arc surface states. However, they had been found to be extremely rare in nature. Recently, a family of compounds, consisting of TaAs, TaP, NbAs and NbP was predicted as Weyl semimetal candidates. Here, we experimentally realize a Weyl semimetal state in TaP. Using photoemission spectroscopy, we directly observe the Weyl fermion cones and nodes in the bulk and the Fermi arcs on the surface. Moreover, we find that the surface states show an unexpectedly rich structure, including both topological Fermi arcs and several topologically-trivial closed contours in the vicinity of the Weyl points, which provides a promising platform to study the interplay between topological and trivial surface states on a Weyl semimetal's surface. We directly demonstrate the bulk-boundary correspondence and hence establish the topologically nontrivial nature of the Weyl semimetal state in TaP, by resolving the net number of chiral edge modes on a closed path that encloses the Weyl node. This also provides, for the first time, an experimentally practical approach to demonstrating a bulk Weyl fermion from a surface state dispersion measured in photoemission.

cond-mat.mes-hall↗
arXiv2015

Atomic Scale Visualization of Quantum Interference on a Weyl Semimetal Surface by Scanning Tunneling Microscopy/Spectroscopy

Weyl semimetals may open a new era in condensed matter physics, materials science and nanotech after graphene and topological insulators. We report the first atomic scale view of the surface states of a Weyl semimetal (NbP) using scanning tunneling microscopy/spectroscopy. We observe coherent quantum interference patterns that arise from the scattering of quasiparticles near point defects on the surface. The measurements reveal the surface electronic structure both below and above the chemical potential in both real and reciprocal spaces. Moreover, the interference maps uncover the scattering processes of NbP's exotic surface states. Through comparison between experimental data and theoretical calculations, we further discover that the scattering channels are largely restricted by the orbital and/or spin texture of the surface band. The visualization of the scattering processes can help design novel transport effects and electronics on the topological surface of a Weyl semimetal.

cond-mat.mtrl-sci↗
arXiv2015

Electronic structure and relaxation dynamics in a superconducting topological material

Topological superconductors host new states of quantum matter which show a pairing gap in the bulk and gapless surface states providing a platform to realize Majorana fermions. Recently, alkaline-earth metal Sr intercalated Bi2Se3 has been reported to show superconductivity with a Tc ~ 3 K and a large shielding fraction. Here we report systematic normal state electronic structure studies of Sr0.06Bi2Se3 (Tc ~ 2.5 K) by performing photoemission spectroscopy. Using angle-resolved photoemission spectroscopy (ARPES), we observe a quantum well confined two-dimensional (2D) state coexisting with a topological surface state in Sr0.06Bi2Se3. Furthermore, our time-resolved ARPES reveals the relaxation dynamics showing different decay mechanism between the excited topological surface states and the two-dimensional states. Our experimental observation is understood by considering the intra-band scattering for topological surface states and an additional electron phonon scattering for the 2D states, which is responsible for the superconductivity. Our first-principles calculations agree with the more effective scattering and a shorter lifetime of the 2D states. Our results will be helpful in understanding low temperature superconducting states of these topological materials.

cond-mat.mes-hall↗