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Ramesh Kudalippalliyalil

Publications and source records attributed to Ramesh Kudalippalliyalil.

2 recordsLinked to original sources

Ultrasensitive Polarization-Resolved Probing of Transient Dynamics in MoS$_2$ on Silicon Nitride Microresonators

We present an ultrasensitive technique for probing transient optical changes in atomically thin molybdenum disulfide (MoS$_2$) layers integrated onto silicon nitride (Si$_3$N$_4$) ring resonators. The MoS$_2$ is illuminated by a femtosecond laser, while a tunable near-infrared (NIR) continuous-wave laser probes the microresonator resonance. The NIR light polarization can be adjusted to either transverse electric (TE, parallel to the 2D material) or transverse magnetic (TM, perpendicular), a configuration that is impossible to achieve with conventional normal-incidence pump-probe techniques. By capturing the transmitted signal on a fast oscilloscope, we detect transient optical shifts with unprecedented sensitivity, observing phenomena over time scales ranging from picoseconds to microseconds. Our results reveal both a rapid, carrier-induced nonlinear optical shift in the resonance, and a slower thermo-optic transient. The ability to simultaneously measure these fast and slow dynamics offers new insight into the complex optoelectronic behavior of 2D materials when integrated with microresonators. This method provides a significant advance over traditional pump-probe approaches, enabling the detection of exceedingly small transient signals and opening new avenues for exploring the optical properties of atomically thin materials. Our findings highlight the potential of this approach for investigating polarization-dependent nonlinear effects, with applications in photonics, sensing, and optoelectronics.

physics.optics↗

Towards Scalable, Energy-Efficient and Ultra-Fast Optical SRAM

Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device components such as cross-coupled micro-ring resonators and photodiodes. Based on the chosen photonic components, the memory operates at a speed of 20 Gb/s and requires ultra-low static (switching) energy of ~ 16.7 aJ/bit (~ 1.04 pJ/bit) to store a single bit. The footprint of the bit cell is ~ 2400 μm^2. The proposed O-SRAM can be configured in a 2D memory array by replicating the bit-cells along rows and columns for creating ultra-large scale on-chip optical memory sub-system. Such manufacturing-friendly, large-scale optical-SRAM could form the underlying memory backbone for photonics integrated circuits with wide applications in novel computing and networking.

physics.app-ph↗