arXiv subjects

Ran Gao

Publications and source records attributed to Ran Gao.

24 records · Page 2Linked to original sources

arXiv2022

Prospects of strongly lensed fast radio bursts: Simultaneous measurement of post-Newtonian parameter and Hubble constant

Strong gravitational lensing effect is a powerful tool to probe cosmological models and gravity theories. Recently, the time-delay cosmography from strong lensing and the stellar kinematics of the deflector, which encode the Hubble constant and the post-Newtonian parameter via two distance ratios reflecting the lensing mass and dynamical mass respectively, have been proposed to investigate these two parameters simultaneously. Among strong lensing systems with different sources, strongly lensed fast radio bursts (FRBs) have been proposed as precision probes of the universe since the time delay $\sim$ 10 days between images could be measured extremely precisely because of their short duration of a few milliseconds. In this work, we investigate the ability of strongly lensed FRBs on simultaneously estimating these two parameters via simulations. Take the expected FRB detection rate of upcoming facilities and lensing probability into consideration, it is likely to accumulate 10 lensed FRBs in several years and we find that $H_0$ could be determined to a $\sim1.5\%$ precision and $γ_{\rm PPN}$ could be constrained to a $\sim8.7\%$ precision simultaneously from them. These simultaneous estimations will be helpful for properly reflecting the possible correlation between these two fundamental parameters.

astro-ph.CO↗

arXiv2022

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits.

quant-ph↗

arXiv2021

Fluxonium: an alternative qubit platform for high-fidelity operations

Superconducting qubits provide a promising path toward building large-scale quantum computers. The simple and robust transmon qubit has been the leading platform, achieving multiple milestones. However, fault-tolerant quantum computing calls for qubit operations at error rates significantly lower than those exhibited in the state of the art. Consequently, alternative superconducting qubits with better error protection have attracted increasing interest. Among them, fluxonium is a particularly promising candidate, featuring large anharmonicity and long coherence times. Here, we engineer a fluxonium-based quantum processor that integrates high qubit-coherence, fast frequency-tunability, and individual-qubit addressability for reset, readout, and gates. With simple and fast gate schemes, we achieve an average single-qubit gate fidelity of 99.97% and a two-qubit gate fidelity of up to 99.72%. This performance is comparable to the highest values reported in the literature of superconducting circuits. Thus our work, for the first time within the realm of superconducting qubits, reveals an approach toward fault-tolerant quantum computing that is alternative and competitive to the transmon system.

quant-ph↗

arXiv2017

The binarity of Galactic dwarf stars along with effective temperature and metallicity

The fraction of binary stars (fb) is one of most valuable tool to probe the star formation and evolution of multiple systems in the Galaxy. We focus on the relationship between fb and stellar metallicity ([Fe/H]) by employing the differential radial velocity (DRV) method and the large sample observed by the Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST). Main-sequence stars from A- to K-types in the third data release (DR3) of LAMOST are selected to estimate fb. Contributions to a profile of DRV from radial velocity (RV) error of single stars (σ) and orbital motion of binary stars are evaluated from the profile of DRV. Finally, we employ 365,911 stars with randomly repeating spectral observations to present a detailed analysis of fb and σin the two-dimensional (2D) space of Teff and [Fe/H]. The A-type stars are more likely to be companions in binary star systems than other stars. Furthermore, the reverse correlation between fb and [Fe/H] can be shown statistically, which suggests that fb is a joint function of Teff and [Fe/H]. At the same time, σof the sample for different Teff and [Fe/H] are fitted. Metal-rich cold stars in our sample have the best RV measurement.

astro-ph.SR↗

arXiv2016

Self-Assembled, Nanostructured, Tunable Metamaterials via Spinodal Decomposition

Self-assembly via nanoscale phase-separation offers an elegant route to fabricate nanocomposites with physical properties unattainable in single-component systems. One important class of nanocomposites are optical metamaterials which exhibit exotic properties and lead to opportunities for agile control of light propagation. Such metamaterials are typically fabricated via expensive and hard-to-scale top-down processes requiring precise integration of dissimilar materials. In turn, there is a need for alternative, more efficient routes to fabricate large-scale metamaterials for practical applications with deep-subwavelength resolution. Here, we demonstrate a bottom-up approach to fabricate scalable nanostructured metamaterials via spinodal decomposition. To demonstrate the potential of such an approach, we leverage the innate spinodal decomposition of the VO2-TiO2 system, the metal-to-insulator transition in VO2, and thin-film epitaxy, to produce self-organized nanostructures with coherent interfaces and a structural unit cell down to 15 nm (tunable between horizontally- and vertically-aligned lamellae) wherein the iso-frequency surface is temperature-tunable from elliptic- to hyperbolic-dispersion producing metamaterial behavior. These results provide an efficient route for the fabrication of nanostructured metamaterials and other nanocomposites for desired functionalities.

cond-mat.mtrl-sci↗

arXiv2015

Visible light carrier generation in co-doped epitaxial titanate films

Perovskite titanates such as SrTiO$_{3}$ (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity, and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr$^{3+}$ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

cond-mat.mtrl-sci↗