arXiv subjects

Randall K. Chan

Publications and source records attributed to Randall K. Chan.

6 recordsLinked to original sources

arXiv2026

Magnetic Brightening and Nanoscale Imaging of Spin-Polarized Helical Edge Modes

Efficient sub-10 nm electric transport remains a major challenge for nanoelectronics due to high losses and impedance mismatches in conventional Drude metals. Despite their promise of dissipationless, reflection-free conduction, topologically protected chiral edge modes remain little explored in their nanoscale spin polarized transport-particularly regarding real-space visualization, magnetic field tunability, and high-frequency edge conductivity. Here, we report magnetic brightening and nanoscale visualization of highly spin-polarizable infrared helical edge states using cryogenic magneto-infrared scattering-type scanning near-field optical microscopy (cm-IR-sSNOM). Our measurements reveal magnetic field-induced near-field conductivity at step edges, uncovering quantum spin Hall spin-splitting modes with enhanced infrared polarizability and slightly narrowed near-field profiles. In addition, the infrared edge electrodynamic response scales nearly linearly with atomic layer number, providing compelling evidence that magnetic-field-induced gaps do not disrupt individual-layer edge states at energies of around 100 meV. These results sharply contrast with microwave and DC transport, where even small magnetically induced gaps decrease edge conduction. Magnetically tunable, topologically robust high-frequency edge modes open a pathway toward ultralow-loss nanoscale interconnects and quantum logic architectures for next-generation microelectronics, spintronics and quantum information science.

cond-mat.mes-hall↗

arXiv2026

Terahertz magneto-nanoscopy of encapsulated monolayer graphene

This study investigates the nanoscale conductivity of encapsulated monolayer graphene at temperatures down to 5 K and magnetic fields of up to 1 T. We use the scattering-type scanning near-field optical microscopy (s-SNOM) technique to probe magnetic-field-dependent responses from graphene close to charge neutrality in the terahertz spectral region. We observe the near-perfect high-$q$ reflector behavior of graphene but with subtle changes by the presence of magnetic fields. Measurements align with calculations of the magneto-optical conductivity and the near-field spectroscopic contrast that describes the field-tunable cyclotron resonance of Dirac fermions. Our result provides an initial step toward understanding temperature and magnetic-field effects on nanoscale terahertz transport in two-dimensional quantum materials.

cond-mat.mes-hall↗

arXiv2026

Terahertz-nanoscale visualization of the microscopic spin-charge architecture of colossal magnetoresistive switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-based microelectronics and quantum logic architectures. Yet, the requirement of simultaneous control of high magnetic field, cryogenic environment, and nanometer-scale resolution has remained an elusive benchmark for terahertz nanoscopy, leaving the obscured nano-scale high-frequency dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) platform to resolve the nanoscale, THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal $\text{Pr}_{2/3}\text{Ca}_{1/3}\text{MnO}_{3}$. Our measurements provide a real-space visualization of the local THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the phase transition from an antiferromagnetic insulator to a ferromagnetic metal. THz nano-imaging, together with an ellipsoidal near-field model, reveals a multi-scale transition initiated by 1-2 nm isolated spin-flip sites at low magnetic fields, which coalesce into $\sim$15~nm conducting regions as the threshold field is approached. These results provide an in situ, previously inaccessible THz real-space view of CMR switching, establishing a general analysis framework for mapping spin-charge-lattice-orbit-coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

cond-mat.str-el↗

arXiv2025

Vortex-Controlled Quasiparticle Multiplication and Self-Growth Dynamics in Superconducting Resonators

Even in the quantum limit, non-equilibrium quasiparticle (QP) populations induce QP poisoning that irreversibly relaxes the quantum state and significantly degrades the coherence of transmon qubits. A particularly detrimental yet previously unexplored mechanism arises from QP multiplication facilitated by vortex trapping in superconducting quantum circuits, where a high-energy QP relaxes by breaking additional Cooper pairs and amplifying the QP population due to the locally reduced excitation gap and enhanced quantum confinement within the vortex core. Here we directly resolve this elusive QP multiplication process by revealing vortex-controlled QP self-generation in a highly nonequilibrium regime preceding the phonon bottleneck of QP relaxation. At sufficiently low fluence, femtosecond-resolved magneto-reflection spectroscopy directly reveals a continuously increasing QP population that is strongly dependent on magnetic-field-tuned vortex density and absent at higher excitation fluences. Quantitative analysis of the emergent QP pre-bottleneck dynamics further reveals that, although the phonon population saturates within $\simeq$10~ps, both free and trapped QPs continue to grow in a self-sustained manner--hallmarks of the long-anticipated QP-vortex interactions in nonequilibrium superconductivity. We estimate a substantial increase of $\sim$34\% in QP density at vortex densities of $\sim$ 100 magnetic flux quanta per $\mathrm{μm^{2}}$. Our findings establish a powerful spectroscopic tool for uncovering QP multiplication and reveal vortex-assisted QP relaxation as a critical materials bottleneck whose mitigation will be essential for resolving QP poisoning and enhancing coherence in superconducting qubits.

cond-mat.supr-con↗

arXiv2025

Correlating Superconducting Qubit Performance Losses to Sidewall Near-Field Scattering via Terahertz Nanophotonics

Elucidating dielectric losses, structural heterogeneity, and interface imperfections is critical for improving coherence in superconducting qubits. However, most diagnostics rely on destructive electron microscopy or low-throughput millikelvin quantum measurements. Here, we demonstrate noninvasive terahertz (THz) nano-imaging/-spectroscopy of encapsulated niobium transmon qubits, revealing sidewall near-field scattering that correlates with qubit coherence. We further employ a THz hyperspectral line scan to probe dielectric responses and field participation at Al junction interfaces. These findings highlight the promise of THz near-field methods as a high-throughput proxy characterization tool for guiding material selection and optimizing processing protocols to improve qubit and quantum circuit performance.

cond-mat.mes-hall↗

arXiv2025

Identifying Materials-Level Sources of Performance Variation in Superconducting Transmon Qubits

The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T$_1$ lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.

quant-ph↗