arXiv subjects

Randall L. Headrick

Publications and source records attributed to Randall L. Headrick.

24 records · Page 2Linked to original sources

arXiv2015

Spatially, Temporally and Polarization-Resolved Photoluminescence Exploration of Excitons in Crystalline Phthalocyanine Thin Films

The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that investigate exciton states within a single crystalline grain in solution-processed phthalocyanine thin films. These experiments reveal the existence of a delocalized singlet exciton, polarized along the high mobility axis in this quasi-1D electronic system. The strong delocalized π orbitals overlap controlled by the molecular stacking along the high mobility axis is responsible for breaking the radiative recombination selection rules. Using our linear dichroism scanning microscopy setup we further established a rotation of molecules (i.e. a structural phase transition) that occurs above 100 K prevents the observation of this exciton at room temperature.

cond-mat.mes-hall↗

arXiv2012

Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films

We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than one volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution processed small molecule organic semiconductor thin films where relatively high energy grain boundaries are typically formed. This may be due to the crystal Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping with time constants on the order of 10 s, and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate determining mechanism of the reversible trapping.

cond-mat.mtrl-sci↗

arXiv2011

Lattice relaxation of dimer islands on Ge(001) during homoepitaxy by pulsed laser deposition

In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction with expansion and contraction present in orthogonal directions. The relaxation carries over into multilevel islands, suggesting that domains in subsequent layers form metastable stress domains. We infer that the island distribution differs from continuous deposition, enhancing the population of monodisperded islands exhibiting anisotropic relaxation.

cond-mat.mtrl-sci↗

arXiv2011

Growth of macroscopic-area single crystal polyacene thin films on arbitrary substrates

Organic electronic materials have potential applications in a number of low-cost, large area electronic devices such as flat panel displays and inexpensive solar panels. Small molecules in the series Anthracene, Tetracene, Pentacene, are model molecules for organic semiconductor thin films to be used as the active layers in such devices. This has motivated a number of studies of polyacene thin film growth and structure. Although the majority of these studies rely on vapor-deposited films, solvent-based deposition of films with improved properties onto non-crystalline substrates is desired for industrial production of devices. Improved ordering in thin films will have a large impact on their electronic properties, since grain boundaries and other defects are detrimental to carrier mobilities and lifetimes. Thus, a long-standing challenge in this field is to prepare largearea single crystal films on arbitrary substrates. Here we demonstrate a solvent-based method to deposit thin films of organic semiconductors, which is very general. Anthracene thin films with single-crystal domain sizes exceeding 1x1 cm2 can be prepared on various substrates by the technique. Films of 6,13-bis(triisopropylsilylethynyl)pentacene are also demonstrated to have grain sizes larger than 2x2 mm2. In contrast, films produced by conventional means such as vapor deposition or spin coating are polycrystalline with micron-scale grain sizes. The general propensity of these small molecules towards crystalline order in an optimized solvent deposition process shows that there is great potential for thin films with improved properties. Films prepared by these methods will also be useful in exploring the limits of performance in organic thin film devices.

cond-mat.mtrl-sci↗

arXiv2010

Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below Pc smooth films are produced, while above Pc roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi2 films are correlated with in situ measurement of stress in WSi2/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at Pc. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nano-voids.

cond-mat.mtrl-sci↗

arXiv2006

Wavelength Tunability of Ion-bombardment Induced Ripples on Sapphire

A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range-nearly two orders of magnitude-by changing the ion incidence angle. Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30. In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.

cond-mat.mtrl-sci↗