SearcharxivSearch

arXiv subjects

Raul Perea-Causin

Publications and source records attributed to Raul Perea-Causin.

At least 19 recordsLinked to original sources

Topological Order Without Band Topology in Moiré Graphene

The discovery of zero-field fractional Chern insulators (FCIs) in moiré materials has attracted intense interest in the interplay between topology and correlations. Here, we demonstrate that fractionalized topological order can emerge under realistic conditions even within a topologically trivial moiré band. By projecting long-range Coulomb interactions into a trivial band of twisted multilayer graphene, we identify a set of incompressible FCI ground states exhibiting fractional quantized Hall conductance. Their Laughlin-like behavior is further confirmed through the particle-cut entanglement spectrum. We trace the origin of this phase to the strongly inhomogeneous distribution of quantum geometry within the moiré Brillouin zone, which reshapes interaction effects independently of the band topology. Extending this heuristic quantum geometric mechanism, we demonstrate that similarly unexpected Laughlin-like FCIs can also be stabilized in higher-Chern-number moiré bands under experimentally accessible conditions. Our results establish realistic scenarios under which many-body topological order can emerge independently of single-particle band topology.

cond-mat.mes-hall

Quantum spin Hall crystals at fractional filling of twisted MoTe$_2$

We predict and classify interaction-driven quantum spin Hall crystals (QSHCs), a class of states emerging at fractional filling through an interplay of topology and spontaneous translation-symmetry breaking. QSHCs form nearly degenerate manifolds whose members can realize distinct topological phases protected by time-reversal or valley $U(1)_v$ symmetry, with time-reversal acting nontrivially within the manifold. As a representative of this broad class of states we provide evidence for 9-fold quasi-degenerate $\sqrt{3}\times\sqrt{3}$ charge ordered QSHCs at $ν= -8/3$ of twisted bilayer MoTe$_2$ near a $5^\circ$ twist. Here a $\mathbb{Z}_3$ index organizes states related by lattice translation into three time-reversal invariant states with nontrivial $\mathbb{Z}_2$ topology and three time-reversal related doublets whose individual members spontaneously break time-reversal and carry a $U(1)_v$ protected spin-Chern number. Finally, we determine the conditions that favor QSHCs over closely competing intervalley-coherent crystals.

cond-mat.str-el

Topological Order and Non-Hermitian Skin Effect in Generalized Ideal Chern Bands

Fractionalization in ideal Chern bands and non-Hermitian topological physics are two active but so far separate research directions. Merging these, we generalize the notion of ideal Chern bands to the non-Hermitian realm and uncover several striking consequences both on the level of band theory and in the strongly interacting regime. Specifically, we show that the lowest band of a Kapit--Mueller lattice model with an imaginary gauge potential satisfies a generalized ideal condition with complex Berry curvature in sync with a complex quantum metric. The ideal band remains purely real and exactly flat on both the torus and cylinder: eigenstates are extended on the torus, while on the cylinder all right and left eigenstates localize at the boundaries, yielding a non-Hermitian skin effect without spectral winding. In the interacting regime, we find that the generalized ideal condition stabilizes an incompressible liquid at fractional fillings, retaining intrinsic non-Hermitian features on both cylinder and torus, while strikingly distinct on different manifolds. On the cylinder, the ground states are always skin-Laughlin states. In contrast, on the torus, we instead observe an unconventional competition between topologically ordered Laughlin-like states and negative collective modes, arising purely from non-Hermiticity.

cond-mat.mes-hall

Influence of sulphur vacancies on ultrafast charge separation in WS$_2$-graphene heterostructures

Understanding how defects influence charge separation in WS$_2$-graphene heterostructures is crucial for future applications in light harvesting and detection. Previous studies have reported widely varying lifetimes for the charge-separated state, all supposedly linked to electron trapping at sulphur vacancies. The exact impact of these defects, however, has remained unclear. Here, we deliberately introduce sulphur vacancies by annealing the heterostructures at high temperatures in ultrahigh vacuum. Angle-resolved photoemission spectroscopy (ARPES) reveals that these vacancies modify both the band alignment and doping level of the heterostructure. Time-resolved ARPES (trARPES) further shows that increasing the sulphur vacancy concentration prolongs the lifetime of electrons in the WS$_2$ conduction band but shortens the lifetime of the charge-separated state. Guided by model calculations, we attribute this behaviour to shifts in the energy alignment between sulphur vacancy states and graphene's Dirac point, combined with a reduced excitonic absorption. The model also yields a transfer time for electrons tunneling from sulphur vacancies into graphene's Dirac cone of $\sim$4ps, consistent with our trARPES measurements. Our study clarifies the role of sulphur vacancies in WS$_2$-graphene heterostructures, further improving our microscopic understanding of charge dynamics for future optoelectronic applications.

cond-mat.mes-hall

Exciton fractional Chern insulators in moiré heterostructures

Moiré materials have emerged as a powerful platform for exploring exotic quantum phases. While recent experiments have unveiled fractional Chern insulators exhibiting the fractional quantum anomalous Hall effect based on electrons or holes, the exploration of analogous many-body states with bosonic constituents remains largely uncharted. In this work, we predict the emergence of bosonic fractional Chern insulators arising from long-lived excitons in a moiré superlattice formed by twisted bilayer WSe$_2$ stacked on monolayer MoSe$_2$. Performing exact diagonalization on the exciton flat Chern band present in this structure, we provide compelling evidence for the existence of Abelian and non-Abelian phases at band filling $\frac{1}{2}$ and $1$, respectively, through multiple robust signatures including ground-state degeneracy, spectral flow, many-body Chern number, and particle-cut entanglement spectrum. The obtained energy gap of $\sim 10$ meV for the Abelian states suggests a remarkably high stability of this phase, which persists for a relatively wide range of twist angles and vertical electric fields. Our findings establish the presence of robust bosonic fractional Chern insulators in highly tunable and experimentally accessible moiré heterostructures and unveil a promising pathway for realizing non-Abelian anyons.

cond-mat.mes-hall

ARPES signatures of trions in van der Waals materials

Angle-resolved photoemission spectroscopy (ARPES) has recently emerged as a direct probe of excitonic correlations in two-dimensional semiconductors, resolving their dispersion and dynamics in energy-momentum space, including dark exciton states inaccessible to optical techniques. However, the ARPES fingerprint of charged excitons (trions), which plays a key role in all doped and gated 2D material systems, has remained unknown so far. We present a first theoretical analysis of trion signatures in monolayer transition-metal dichalcogenides, highlighting how the additional charge carrier modifies the spectral position and shape relative to neutral excitons in ARPES spectra. Interestingly, we further predict that mass-imbalanced trions yield a characteristic double-peak structure, clearly separated in energy and line shape from neutral excitons. The predicted temperature dependence of these features offers guidance for experimental investigations aimed at identifying trionic states, thereby establishing a framework for ARPES studies of many-body Coulomb complexes in doped two-dimensional semiconductors.

cond-mat.mes-hall

Electrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer

Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.

cond-mat.mes-hall

Quantum anomalous Hall crystals in moiré bands with higher Chern number

The realization of fractional Chern insulators in moiré materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous Hall crystals (QAHCs), which combine the zero-field quantum Hall effect with spontaneously broken discrete translation symmetry. Here, we employ exact diagonalization to demonstrate the existence of stable QAHCs arising from $\frac{2}{3}$-filled moiré bands with Chern number $C=2$. Our calculations show that these topological crystals, which are characterized by a quantized Hall conductivity of $1$ (in units of $e^2/h$) and a tripled unit cell, are robust in an ideal model of twisted bilayer-trilayer graphene -- providing a novel explanation for experimental observations in this heterostructure. Furthermore, we predict that the QAHC remains robust in a realistic model of twisted double bilayer graphene and, in addition, we provide a range of optimal tuning parameters, namely twist angle and electric field, for experimentally realizing this phase. Overall, our work demonstrates the stability of QAHCs at odd-denominator filling of $C=2$ bands, provides specific guidelines for future experiments, and establishes chiral multilayer graphene as a theoretical platform for studying topological phases beyond the Landau-level paradigm.

cond-mat.mes-hall

Parafermions in Moiré Minibands

Moiré materials provide a remarkably tunable platform for topological and strongly correlated quantum phases of matter. Very recently, the first zero field Abelian fractional Chern insulators (FCIs) have been experimentally demonstrated and it has been theoretically predicted that non-Abelian states with Majorana fermion excitations may be realized in the nearly dispersionless minibands of these systems. Here we provide telltale evidence in terms of low-energy quantum numbers, spectral flow and entanglement spectra for the even more exotic possibility of moiré-based non-Abelian FCIs exhibiting Fibonacci parafermion excitations.

cond-mat.str-el

Stability of Wigner crystals and Mott insulators in twisted moiré structures

Transition metal dichalcogenides (TMDs) constitute an intriguing platform for studying charge-ordered states including conventional and generalized Wigner crystals as well as Mott insulating states. In this work, we combine a phonon mode expansion of the electronic crystal vibrations with the Lindemann criterion to investigate the quantum and thermal stability of these strongly correlated phases in the exemplary materials of MoSe$_2$ monolayers and twisted MoSe$_2$-WSe$_2$ heterostructures. We find that the moiré potential in heterobilayers acts as a harmonic trap, flattening the energy dispersion of phonon excitations and resulting in an order of magnitude larger melting temperatures compared to monolayer Wigner crystals. Furthermore, we explore the tunability of the correlated states with respect to dielectric environment and bilayer stacking. In particular, we show that the reduced screening in free-standing TMDs results in a tenfold increase in the melting temperature compared to hBN-encapsulated TMDs. Moreover, the deeper moiré potential in R-type stacked heterostructures makes generalized Wigner crystals more stable than in H-type stacking. Overall, our study provides important microscopic insights on the stability and tunability of charge-ordered states in TMD-based structures.

cond-mat.mtrl-sci

Electrically tunable layer-hybridized trions in doped WSe$_2$ bilayers

Doped van der Waals heterostructures host layer-hybridized trions, i.e. charged excitons with layer-delocalized constituents holding promise for highly controllable optoelectronics. Combining a microscopic theory with photoluminescence (PL) experiments, we demonstrate the electrical tunability of the trion energy landscape in naturally stacked WSe$_2$ bilayers. We show that an out-of-plane electric field modifies the energetic ordering of the lowest lying trion states, which consist of layer-hybridized $Λ$-point electrons and layer-localized K-point holes. At small fields, intralayer-like trions yield distinct PL signatures in opposite doping regimes characterized by weak Stark shifts in both cases. Above a doping-asymmetric critical field, interlayer-like species are energetically favored and produce PL peaks with a pronounced Stark red-shift and a counter-intuitively large intensity arising from efficient phonon-assisted recombination. Our work presents an important step forward in the microscopic understanding of layer-hybridized trions in van der Waals heterostructures and paves the way towards optoelectronic applications based on electrically controllable atomically-thin semiconductors.

cond-mat.mes-hall

Phonon-bottleneck enhanced exciton emission in 2D perovskites

Layered halide perovskites exhibit remarkable optoelectronic properties and technological promise, driven by strongly bound excitons. The interplay of spin-orbit and exchange coupling creates a rich excitonic landscape, determining their optical signatures and exciton dynamics. Despite the dark excitonic ground state, surprisingly efficient emission from higher-energy bright states has puzzled the scientific community, sparking debates on relaxation mechanisms. Combining low-temperature magneto-optical measurements with sophisticated many-particle theory, we elucidate the origin of the bright exciton emission in perovskites by tracking the thermalization of dark and bright excitons under a magnetic field. We clearly attribute the unexpectedly high emission to a pronounced phonon-bottleneck effect, considerably slowing down the relaxation towards the energetically lowest dark states. We demonstrate that this bottleneck can be tuned by manipulating the bright-dark energy splitting and optical phonon energies, offering valuable insights and strategies for controlling exciton emission in layered perovskite materials that is crucial for optoelectronics applications.

cond-mat.mes-hall

Trion photoluminescence and trion stability in atomically thin semiconductors

The optical response of doped monolayer semiconductors is governed by trions, i.e. photoexcited electron-hole pairs bound to doping charges. While their photoluminescence (PL) signatures have been identified in experiments, a microscopic model consistently capturing bright and dark trion peaks is still lacking. In this work, we derive a generalized trion PL formula on a quantum-mechanical footing, considering direct and phonon-assisted recombination mechanisms. We show the trion energy landscape in WSe$_2$ by solving the trion Schrödinger equation. We reveal that the mass imbalance between equal charges results in less stable trions exhibiting a small binding energy and, interestingly, a large energetic offset from exciton peaks in PL spectra. Furthermore, we compute the temperature-dependent PL spectra for n- and p-doped monolayers and predict yet unobserved signatures originating from trions with an electron at the $Λ$ point. Our work presents an important step towards a microscopic understanding of the internal structure of trions determining their stability and optical fingerprint.

cond-mat.mes-hall

Electrically tunable dipolar interactions between layer-hybridized excitons

Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe$_2$ homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or less interlayer-like depending on the strength of the external electric field. Based on a microscopic and material-specific many-particle theory, we reveal two intriguing interaction regimes: a low-dipole regime at small electric fields and a high-dipole regime at larger fields, involving interactions between hybrid excitons with a substantially different intra- and interlayer composition in the two regimes. While the low-dipole regime is characterized by weak inter-excitonic interactions between intralayer-like excitons, the high-dipole regime involves mostly interlayer-like excitons which display a strong dipole-dipole repulsion and give rise to large spectral blue-shifts and a highly anomalous diffusion. Overall, our microscopic study sheds light on the remarkable electrical tunability of hybrid exciton-exciton interactions in atomically thin semiconductors and can guide future experimental studies in this growing field of research.

cond-mat.mes-hall

Exciton optics, dynamics and transport in atomically thin semiconductors

Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to a rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in the understanding of exciton optics, dynamics and transport, which crucially govern the operation of TMD-based devices. We highlight the impact of hBN-encapsulation, which reveals a plethora of many-particle states in optical spectra, and we outline the most novel breakthroughs in the field of exciton-polaritonics. Moreover, we underline the direct observation of exciton formation and thermalization in TMD monolayers and heterostructures in recent time-resolved ARPES studies. We also show the impact of exciton density, strain and dielectric environment on exciton diffusion and funneling. Finally, we put forward relevant research directions in the field of atomically thin semiconductors for the near future.

cond-mat.mes-hall

Trion-phonon interaction in atomically thin semiconductors

Optical and transport properties of doped monolayer semiconductors are dominated by trions, which are three-particle compounds formed by two electrons and one hole or vice versa. In this work, we investigate the trion-phonon interaction on a microscopic footing and apply our model to the exemplary case of a molybdenum diselenide (MoSe2) monolayer. We determine the trion series of states and their internal quantum structure by solving the trion Schrödinger equation. Transforming the system into a trion basis and solving equations of motion, including the trion-phonon interaction within the second-order Born-Markov approximation, provides a microscopic access to the trion dynamics. In particular, we investigate trion propagation and compute the diffusion coefficient and mobility. In the low density limit, we find that trions propagate less efficiently than excitons and electrons due to their stronger coupling with phonons and their larger mass. For increasing densities, we predict a drastic enhancement of diffusion caused by the build-up of a large pressure by the degenerate trion gas, which is a direct consequence of the fermionic character of trions. Our work provides microscopic insights into the trion-phonon interaction and its impact on the diffusion behaviour in atomically thin semiconductors.

cond-mat.mes-hall

Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor

Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range, make two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a new platform for this purpose due to its excellent optical properties and the flat valence band dispersion with a Mexican-hat-like inversion. In this work, we present a complete study of charge-tunable excitons in few-layer InSe by photoluminescence spectroscopy. From the optical spectra, we establish that free excitons in InSe are more likely to be captured by ionized donors due to the large exciton Bohr radius, leading to the formation of bound exciton complexes. Surprisingly, a pronounced redshift of the exciton energy accompanied by a decrease of the exciton binding energy upon hole-doping reveals a significant band gap renormalization and dynamical screening induced by the presence of the Fermi reservoir. Our findings establish InSe as a reproducible and potentially manufacturable platform to explore electron correlation phenomena without the need for twist-angle engineering.

cond-mat.mes-hall

Dark exciton-exciton annihilation in monolayer WSe$_2$

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe$_2$. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.

cond-mat.mes-hall