arXiv subjects

Ravindra G Bhardwaj

Publications and source records attributed to Ravindra G Bhardwaj.

4 recordsLinked to original sources

arXiv2026

Interlayer charge transfer from contact electrification in conducting micro and nanoscale thin film heterostructures

Contact electrification give rise to charge accumulation at the interface when two materials are brought into contact with each other. The charge accumulation at the interface will diffuse to the interior of the conducting material if the dimensions of the contacting conducting material is of the order of an unknown critical length scale. This contact electrification induced interlayer charge transfer will modify the fundamental physical properties of both the contacting materials. This review first discusses the reported experimental evidence of flexoelectricity induced contact electrification and interlayer charge transfer in conducting thin film based heterostructures. The interlayer charge transfer creates a gradient of charge carrier in both the thin films constituting the heterostructure and also modifies the electron-electron interactions. Further, the interlayer charge transfer changes the electron-phonon coupling, spin-phonon coupling and magnetoelectronic coupling that give rise to new physical behavior, which did not exist prior to the interlayer charge transfer. The new physical behaviors from interlayer charge transfer and their mechanistic origins are reanalyzed and discussed, which include spin-Hall effect of charge carriers, topological Hall effect of magnetoelectronic electromagnon, inhomogeneous magnetoelectronic multiferroic effect, flexoelectronic proximity effect and topological spin texture. This review article presents a unified picture of current status and future directions that will provide the scientists a stepping stone for research in the field of flexoelectricity mediated contact electrification and interlayer charge transfer mediated behavior in the micro/nanoscale heterostructures of the conducting materials.

cond-mat.mes-hall↗

arXiv2021

Topological phonons in an inhomogeneously strained silicon-4: Large spin dependent thermoelectric response and thermal spin transfer torque due to topological electronic magnetism of phonons

The superposition of flexoelectronic doping and topological phonons give rise to topological electronic magnetism of phonon in an inhomogeneously strained Si in the bilayer structure with metal. In case of ferromagnetic metal and Si bilayer structure, the flexoelectronic doping will also give rise to larger spin current, which will lead to large spin to charge conversion due to topological electronic magnetism of phonon. By applying a temperature difference to ferromagnetic metal/Si bilayer structure under an applied strain gradient, a large thermoelectric response can be generated. In this experimental study, we report a large spin dependent thermoelectric response at Ni80Fe20/Si bilayer structure. The spin dependent response is found to be an order of magnitude larger than that in Pt thin films and similar to topological insulators surface states in spite of negligible intrinsic spin-orbit coupling of Si. This large response is attributed to the flexoelectronic doping and topological electronic magnetism of phonons, which was uncovered using topological Nernst effect measurement. This alternative and novel approach of using inhomogeneous strain engineering to address both spin current density and spin to charge conversion can open a new window to the realization of spintronics and spin-caloritronics devices using metal and doped-semiconductor layered materials.

cond-mat.mtrl-sci↗

arXiv2020

Flexoelectric effect mediated spin-to-charge conversion at amorphous-Si thin film interfaces

Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using ferroelectric and piezoelectric thin films at the interface. An alternate way to induce the electric potential could be flexoelectric field. The flexoelectricity can be observed in all the material that either have or lack inversion symmetry, additionally no large gate bias is needed. In this experimental study, we report large spin to charge conversion (spin-Hall angle- 0.578) at Ni80Fe20/amorphous-Si interfaces attributed to flexoelectricity mediated Rashba spin-orbit coupling. The flexoelectricity at the interface also gave rise to interlayer spin-acoustic phonon or flexo-magnetoelastic coupling. In addition to spin-charge conversion, the strained interfaces also led to almost three-fold increase in anomalous Nernst effect. This strain engineering for spin dependent thermoelectric behavior at room temperature opens a new window to the realization of spintronics and spin-caloritronics devices.

cond-mat.mes-hall↗

arXiv2018

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. But, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without heavy metal spin detector. The p-Si, having the centosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for detection of spin-Seebeck effect, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to Ni80Fe20 layer due to thermal spin galvanic effect and spin-Hall effect causing spin-orbit torques. The thermal spin-orbit torques leads to collapse of magnetic hysteresis of 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

cond-mat.mes-hall↗