arXiv subjects

Ravindra Singh Bisht

Publications and source records attributed to Ravindra Singh Bisht.

4 recordsLinked to original sources

arXiv2025

Wafer-Scale Integration of Piezo- and Ferroelectric Al0.64Sc0.36N Thin Films by Reactive Sputtering

Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies across the wafer hinder the development of high scandium-content AlScN films, which are critical for microelectromechanical systems applications. In this study, we report the sputter deposition of Al0.64Sc0.36N thin films from a 300 mm Al0.64Sc0.36 alloy target on 200 mm Si(100) wafers, achieving an exceptionally high deposition rate of 8.7 μm/h with less than 1% AOGs and controllable stress tuning. Comprehensive microstructural and electrical characterizations confirm the superior growth of high-quality Al0.64Sc0.36N films with exceptional wafer-average piezoelectric coefficients (d33,f =15.62 pm/V and e31,f = -2.9 C/m2) owing to low point defects density and grain mosaicity. This was accomplished through the implementation of an optimized seed layer and a refined electrode integration strategy, along with optimal process conditions. The wafer yield and device failure rates are analysed and correlated with the average stress of the films and their stress profiles along the diameter. The resulting films show excellent uniformity in structural, compositional, and piezoelectric properties across the entire 200 mm wafer, underscoring their strong potential for next-generation MEMS applications.

cond-mat.mtrl-sci↗

arXiv2023

High-speed sensing of RF signals with phase change materials

RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well as off-stoichiometric vanadium oxide films can be modulated with RF wave exposures from a distance. The response of the materials to the RF waves can be enhanced by either increasing the power received by the sample or reducing channel separation. We report a significant ~73% drop in resistance with a 5 μm channel gap of the VO2 film at a characteristic response time of 16 microseconds. The peak sensitivity is proximal to the phase transition temperature boundary that can be engineered via doping and crystal chemistry. Dynamic sensing measurements highlight the films' rapid response and broad-spectrum sensitivity. Engineering electronic phase boundaries in correlated electron systems could offer new capabilities in emerging communication technologies.

physics.app-ph↗

arXiv2020

Observation of decoupling of electrons from phonon bath close to a correlation driven metal-insulator transition

We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a large noise arise from small isolated pockets of nanometric metallic phases (estimated size $\sim$ 15-20 nm) within the insulating phase with the charging energy as the control parameter.

cond-mat.str-el↗

arXiv2020

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

cond-mat.str-el↗