arXiv subjects

Ravishankar Sundararaman

Publications and source records attributed to Ravishankar Sundararaman.

At least 55 records · Page 3Linked to original sources

arXiv2019

Substrate effects on charged defects in two-dimensional materials

Two-dimensional (2D) materials are strongly affected by the dielectric environment including substrates, making it an important factor in designing materials for quantum and electronic technologies. Yet, first-principles evaluation of charged defect energetics in 2D materials typically do not include substrates due to the high computational cost. We present a general continuum model approach to incorporate substrate effects directly in density-functional theory calculations of charged defects in the 2D material alone. We show that this technique accurately predicts charge defect energies compared to much more expensive explicit substrate calculations, but with the computational expediency of calculating defects in free-standing 2D materials. Using this technique, we rapidly predict the substantial modification of charge transition levels of two defects in MoS$_2$ and ten defects promising for quantum technologies in hBN, due to SiO$_2$ and diamond substrates. This establishes a foundation for high-throughput computational screening of new quantum defects in 2D materials that critically accounts for substrate effects.

cond-mat.mtrl-sci↗

arXiv2019

Transport of hot carriers in plasmonic nanostructures

Plasmonic hot carrier devices extract excited carriers from metal nanostructures before equilibration, and have the potential to surpass semiconductor light absorbers. However their efficiencies have so far remained well below theoretical limits, which necessitates quantitative prediction of carrier transport and energy loss in plasmonic structures to identify and overcome bottlenecks in carrier harvesting. Here, we present a theoretical and computational framework, Non-Equilibrium Scattering in Space and Energy (NESSE), to predict the spatial evolution of carrier energy distributions that combines the best features of phase-space (Boltzmann) and particle-based (Monte Carlo) methods. Within the NESSE framework, we bridge first-principles electronic structure predictions of plasmon decay and carrier collision integrals at the atomic scale, with electromagnetic field simulations at the nano- to mesoscale. Finally, we apply NESSE to predict spatially-resolved energy distributions of photo-excited carriers that impact the surface of experimentally realizable plasmonic nanostructures at length scales ranging from tens to several hundreds of nanometers, enabling first-principles design of hot carrier devices.

physics.comp-ph↗

arXiv2019

Electron mobility in graphene without invoking the Dirac equation

The Dirac point and linear band structure in Graphene bestow it with remarkable electronic and optical properties, a subject of intense ongoing research. Explanations of high electronic mobility in graphene, often invoke the masslessness of electrons based on the effective relativistic Dirac-equation behavior, which are inaccessible to most undergraduate students and are not intuitive for non-physics researchers unfamiliar with relativity. Here, we show how to use only basic concepts from semiconductor theory and the linear band structure of graphene to explain its unusual effective mass and mobility, and compare them with conventional metals and semiconductors. We discuss the more intuitive concept of transverse effective mass that emerges naturally from these basic derivations, which approaches zero in the limit of undoped graphene at low temperature and is responsible for its extremely high mobility.

cond-mat.mes-hall↗

arXiv2018

Ultrafast Studies of Hot-Hole Dynamics in Au/p-GaN Heterostructures

Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast dynamics of hot electrons, to date, the temporal evolution of hot holes in metal-semiconductor heterostructures remains unknown. An improved understanding of the carrier dynamics in hot-hole-driven systems is needed to help expand the scope of hot-carrier optoelectronics beyond hot-electron-based devices. Here, using ultrafast transient absorption spectroscopy, we show that plasmon-induced hot-hole injection from gold (Au) nanoparticles into the valence band of p-type gallium nitride (p-GaN) occurs within 200 fs, placing hot-hole transfer on a similar timescale as hot-electron transfer. We further observed that the removal of hot holes from below the Au Fermi level exerts a discernible influence on the thermalization of hot electrons above it, reducing the peak electronic temperature and decreasing the electron-phonon coupling time relative to Au samples without a pathway for hot-hole collection. First principles calculations corroborate these experimental observations, suggesting that hot-hole injection modifies the relaxation dynamics of hot electrons in Au nanoparticles through ultrafast modulation of the d-band electronic structure. Taken together, these ultrafast studies substantially advance our understanding of the temporal evolution of hot holes in metal-semiconductor heterostructures and suggest new strategies for manipulating and controlling the energy distributions of hot carriers on ultrafast timescales.

cond-mat.mes-hall↗

arXiv2018

Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides

Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the dynamics of four monolayer TMDCs (MoS$_2$, MoSe$_2$, WS$_2$, WSe$_2$) using ab initio calculations to describe electron-electron and electron-phonon interactions. By comparing calculations which both omit and include relativistic effects, we isolate the impact of spin-resolved spin-orbit coupling on transport properties. In our work, we find that spin-orbit coupling increases carrier lifetimes at the valence band edge by an order of magnitude due to spin-valley locking, with a proportional increase in the hole mobility at room temperature. At temperatures of 50~K, we find intervalley scattering times on the order of 100 ps, with a maximum value ~140 ps in WSe$_2$. Finally, we calculate excited-carrier generation profiles which indicate that direct transitions dominate across optical energies, even for WSe$_2$ which has an indirect band gap. Our results highlight the intriguing interplay between spin and valley degrees of freedom critical for valleytronic applications. Further, our work points towards interesting quantum properties on-demand in transition metal dichalcogenides that could be leveraged via driving spin, valley and phonon degrees of freedom.

cond-mat.mes-hall↗

arXiv2018

Plasmonics in Argentene

Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanophotonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here, we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of three compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to e.g. graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly-confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, spanning the spectrum of typical plasmonic applications; in each, Argentene outperforms the state-of-the-art. This unique combination of properties will make Argentene a valuable addition to the two-dimensional heterostructure toolkit for quantum electronic and photonic technologies.

physics.app-ph↗

arXiv2018

Lead-Related Quantum Emitters in Diamond

We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.

quant-ph↗

arXiv2018

Hot carrier dynamics in plasmonic transition metal nitrides

Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nanostructures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first-principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron-electron and electron-phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3 - 4 smaller than noble metals, due to strong electron-phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction.

cond-mat.mtrl-sci↗

arXiv2018

Microscopic Origins of Hydrodynamic Transport in Type-II Weyl Semimetal WP$_2$

The origins of hydrodynamic transport in strongly interacting Dirac and Weyl semimetals have remained elusive in theoretical descriptions and experimental measurements. We investigate the structure and microscopic properties of transport in WP$_2$, a type-II Weyl semimetal, to probe the emergence of hydrodynamic phenomena. We characterize the quantum behavior underlying the hydrodynamic transport regime as a function of temperature through ab initio calculations of the relevant microscopic scattering processes, including electron-phonon, electron-electron, and phonon-mediated electron-electron lifetimes. We present a fundamentally new approach to calculate phonon-drag, a mechanism that is invoked in numerous recent experiments, and remains the subject of active debate in the field. Further, we show unique and unexpected features of the lifetime-resolved Fermi surfaces of WP$_2$ in the hydrodynamic regime and quantify the degree of anisotropy in electron and hole pockets. This description of the microscopic dynamics in hydrodynamic systems like WP$_2$ indicates the importance of electron-phonon interactions in understanding connections between transport in hydrodynamic materials and strongly correlated quantum systems including unconventional metals and high $T_c$ superconductors.

cond-mat.str-el↗

arXiv2018

Improving Accuracy of Electrochemical Capacitance and Solvation Energetics in First-Principles Calculations

Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally-efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including a broad hump in the capacitance near the Potential of Zero Charge (PZC), and a dip in the capacitance under conditions of low ionic strength. Using this model, we identify the necessary characteristics of a solvation model suitable for first-principles electrochemistry of metal surfaces in non-adsorbing, aqueous electrolytes: dielectric and ionic nonlinearity, and a dielectric-only region at the interface. The dielectric nonlinearity, caused by the saturation of dipole rotational response in water, creates the capacitance hump, while ionic nonlinearity, caused by the compactness of the diffuse layer, generates the capacitance dip seen at low ionic strength. We show that none of the previously developed solvation models simultaneously meet all these criteria. We design the Nonlinear Electrochemical Soft-Sphere solvation model (NESS) which both captures the capacitance features observed experimentally, and serves as a general-purpose continuum solvation model.

physics.chem-ph↗

arXiv2017

JDFTx: software for joint density-functional theory

Density-functional theory (DFT) has revolutionized computational prediction of atomic-scale properties from first principles in physics, chemistry and materials science. Continuing development of new methods is necessary for accurate predictions of new classes of materials and properties, and for connecting to nano- and mesoscale properties using coarse-grained theories. JDFTx is a fully-featured open-source electronic DFT software designed specifically to facilitate rapid development of new theories, models and algorithms. Using an algebraic formulation as an abstraction layer, compact C++11 code automatically performs well on diverse hardware including GPUs. This code hosts the development of joint density-functional theory (JDFT) that combines electronic DFT with classical DFT and continuum models of liquids for first-principles calculations of solvated and electrochemical systems. In addition, the modular nature of the code makes it easy to extend and interface with, facilitating the development of multi-scale toolkits that connect to ab initio calculations, e.g. photo-excited carrier dynamics combining electron and phonon calculations with electromagnetic simulations.

cond-mat.mtrl-sci↗

arXiv2017

Electrochemical Capacitance of CO-terminated Pt(111) is Dominated by CO-Solvent Gap

The distribution of electric fields within the electrochemical double layer depends on both the electrode and electrolyte in complex ways. These fields strongly influence chemical dynamics in the electrode-electrolyte interface, but cannot be measured directly with sub-molecular resolution. We report experimental capacitance measurements for aqueous interfaces of CO-terminated Pt(111). By comparing these measurements with first-principles density-functional theory (DFT) calculations, we infer microscopic field distributions and decompose contributions to the inverse capacitance from various spatial regions of the interface. We find that the CO is strongly electronically coupled to the Pt, and that most of the interfacial potential difference appears across the gap between the terminating O and water, and not across the CO molecule as previously hypothesized. This `gap capacitance' resulting from hydrophobic termination lowers the overall capacitance of the aqueous Pt-CO interface, and makes it less sensitive to electrolyte concentration compared to the bare metal.

physics.chem-ph↗

arXiv2017

First Principles Free-Energy Theory of Solvation with Atomic Scale Liquid Structure

Quantum-chemical processes in liquid environments impact broad areas of science, from molecular biology to geology to electrochemistry. While density-functional theory (DFT) has enabled efficient quantum-mechanical calculations which profoundly impact understanding of atomic-scale phenomena, realistic description of the liquid remains a challenge. Here, we present an approach based on joint density-functional theory (JDFT) which addresses this challenge by leveraging the DFT approach not only for the quantum mechanics of the electrons in a solute, but also simultaneously for the statistical mechanics of the molecules in a surrounding equilibrium liquid solvent. Specifically, we develop a new universal description for the interaction of electrons with an arbitrary liquid, providing the missing link to finally transform JDFT into a practical tool for the realistic description of chemical processes in solution. This approach predicts accurate solvation free energies and surrounding atomic-scale liquid structure for molecules and surfaces in multiple solvents without refitting, all at a fraction of the computational cost of methods of comparable detail and accuracy. To demonstrate the potential impact of this method, we determine the structure of the solid/liquid interface, offering compelling agreement with more accurate (but much more computationally intensive) theories and with X-ray reflectivity measurements.

physics.chem-ph↗

arXiv2017

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Charged defects in 2D materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. Advancement of these technologies requires rational design of ideal defect centers, demanding reliable computation methods for quantitatively accurate prediction of defect properties. We present an accurate, parameter-free and efficient procedure to evaluate quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h-BN) for their charge transition levels, stable spin states and optical excitations. We identify $C_BN_V$ (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

cond-mat.mtrl-sci↗

arXiv2017

Hot Carrier Dynamics in Photoexcited Gold Nanostructures: Role of Interband Excitations and Evidence for Ballistic Transport

Harnessing short-lived photoexcited electron-hole pairs in metal nanostructures has the potential to define a new phase of optoelectronics, enabling control of athermal mechanisms for light harvesting, photodetection and photocatalysis. To date, however, the spatiotemporal dynamics and transport of these photoexcited carriers have been only qualitatively characterized. Plasmon excitation has been widely viewed as an efficient mechanism for generating non-thermal hot carriers. Despite numerous experiments, conclusive evidence elucidating and quantifying the full dynamics of hot carrier generation, transport, and injection has not been reported. Here, we combine experimental measurements with coupled first-principles electronic structure theory and Boltzmann transport calculations to provide unprecedented insight into the internal quantum efficiency, and hence internal physics, of hot carriers in photoexcited gold (Au)-gallium nitride (GaN) nanostructures. Our results indicate that photoexcited electrons generated in 20 nm-thick Au nanostructures impinge ballistically on the Au-GaN interface. This discovery suggests that the energy of hot carriers could be harnessed from metal nanostructures without substantial losses via thermalization. Measurements and calculations also reveal the important role of metal band structure in hot carrier generation at energies above the interband threshold of the plasmonic nanoantenna. Taken together, our results advance the understanding of excited carrier dynamics in realistically-scaled metallic nanostructures and lay the foundations for the design of new optoelectronic devices that operate in the ballistic regime.

cond-mat.mtrl-sci↗

arXiv2017

Ultra-light Å-scale Optimal Optical Reflectors

High-reflectance in many state-of-the-art optical devices is achieved with noble metals. However, metals are limited by losses, and for certain applications, by their high mass density. Using a combination of ab initio and optical transfer matrix calculations, we evaluate the behavior of graphene-based Å-scale metamaterials and find that they could act as nearly-perfect reflectors in the mid-long wave infrared (IR) range. The low density of states for electron-phonon scattering and interband excitations leads to unprecedented optical properties for graphene heterostructures, especially alternating atomic layers of graphene and hexagonal boron nitride, at wavelengths greater than $10~μ$m. At these wavelengths, these materials exhibit reflectivities exceeding 99.7% at a fraction of the weight of noble metals, as well as plasmonic mode confinement and quality factors that are greater by an order of magnitude compared to noble metals. These findings hold promise for ultra-compact optical components and waveguides for mid-IR applications. Moreover, unlike metals, the photonic properties of these heterostructures could be actively tuned via chemical and/or electrostatic doping, providing exciting possibilities for tunable devices.

cond-mat.mes-hall↗

arXiv2017

Grand canonical electronic density-functional theory: algorithms and applications to electrochemistry

First-principles calculations combining density-functional theory and continuum solvation models enable realistic theoretical modeling and design of electrochemical systems. When a reaction proceeds in such systems, the number of electrons in the portion of the system treated quantum mechanically changes continuously, with a balancing charge appearing in the continuum electrolyte. A grand-canonical ensemble of electrons at a chemical potential set by the electrode potential is therefore the ideal description of such systems that directly mimics the experimental condition. We present two distinct algorithms, a self-consistent field method (GC-SCF) and a direct variational free energy minimization method using auxiliary Hamiltonians (GC-AuxH), to solve the Kohn-Sham equations of electronic density-functional theory directly in the grand canonical ensemble at fixed potential. Both methods substantially improve performance compared to a sequence of conventional fixed-number calculations targeting the desired potential, with the GC-AuxH method additionally exhibiting reliable and smooth exponential convergence of the grand free energy. Finally, we apply grand-canonical DFT to the under-potential deposition of copper on platinum from chloride-containing electrolytes and show that chloride desorption, not partial copper monolayer formation, is responsible for the second voltammetric peak.

physics.chem-ph↗

arXiv2017

Evaluating continuum solvation models for the electrode-electrolyte interface: challenges and strategies for improvement

Ab initio modeling of electrochemical systems is becoming a key tool for understanding and predicting electrochemical behavior. Development and careful benchmarking of computational electrochemical methods are essential to ensure their accuracy. Here, using charging curves for an electrode in the presence of an inert aqueous electrolyte, we demonstrate that most continuum models, which are parameterized and benchmarked for molecules, anions, and cations in solution, undersolvate metal surfaces, and underestimate the surface charge as a function of applied potential. We examine features of the electrolyte and interface that are captured by these models, and identify improvements necessary for realistic electrochemical calculations of metal surfaces. Finally, we reparameterize popular solvation models using the surface charge of Ag(100) as a function of voltage to find improved accuracy for metal surfaces without significant change in utility for molecular and ionic solvation.

physics.chem-ph↗