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Ray D. Chang

Publications and source records attributed to Ray D. Chang.

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Quantifying surface losses in superconducting aluminum microwave resonators

The recent realization of millisecond-scale coherence with tantalum-on-silicon transmon qubits showed that depositing the Al/AlOx/Al Josephson junction in a high purity, ultrahigh vacuum environment was critical for achieving lifetime-limited coherence, motivating careful examination of the aluminum surface two-level system (TLS) bath. Here, we measure the microwave absorption arising from surface TLSs in superconducting aluminum resonators, following methodology developed for tantalum resonators. We vary film and surface properties and correlate microwave measurements with materials characterization. We find that the lifetimes of superconducting aluminum resonators are primarily limited by surface losses associated with TLSs in the 2.7 nm-thick native AlOx. Treatment with 49% HF removes surface AlOx completely; however, rapid oxide regrowth limits improvements in surface loss and long term device stability. Using these measurements we estimate that TLSs in aluminum interfaces contribute around 27% of the relaxation rate of state-of-the-art tantalum-on-silicon qubits that incorporate aluminum-based Josephson junctions.

quant-ph

2D transmons with lifetimes and coherence times exceeding 1 millisecond

Materials improvements are a powerful approach to reducing loss and decoherence in superconducting qubits because such improvements can be readily translated to large scale processors. Recent work improved transmon coherence by utilizing tantalum (Ta) as a base layer and sapphire as a substrate. The losses in these devices are dominated by two-level systems (TLSs) with comparable contributions from both the surface and bulk dielectrics, indicating that both must be tackled to achieve major improvements in the state of the art. Here we show that replacing the substrate with high-resistivity silicon (Si) dramatically decreases the bulk substrate loss, enabling 2D transmons with time-averaged quality factors (Q) exceeding 1.5 x 10^7, reaching a maximum Q of 2.5 x 10^7, corresponding to a lifetime (T_1) of up to 1.68 ms. This low loss allows us to observe decoherence effects related to the Josephson junction, and we use improved, low-contamination junction deposition to achieve Hahn echo coherence times (T_2E) exceeding T_1. We achieve these material improvements without any modifications to the qubit architecture, allowing us to readily incorporate standard quantum control gates. We demonstrate single qubit gates with 99.994% fidelity. The Ta-on-Si platform comprises a simple material stack that can potentially be fabricated at wafer scale, and therefore can be readily translated to large-scale quantum processors.

quant-ph

Vortex Motion Induced Losses in Tantalum Resonators

Tantalum (Ta) based superconducting circuits have been demonstrated to enable record qubit coherence times and quality factors, motivating a careful study of the microscopic origin of the remaining losses that limit their performance. We have recently shown that the losses in Ta-based resonators are dominated by two-level systems (TLSs) at low microwave powers and millikelvin temperatures. We also observe that some devices exhibit loss that is exponentially activated at a lower temperature inconsistent with the superconducting critical temperature (Tc) of the constituent film. Specifically, dc resistivity measurements show a Tc of over 4 K, while microwave measurements of resonators fabricated from these films show losses that increase exponentially with temperature with an activation energy as low as 0.3 K. Here, we present a comparative study of the structural and thermodynamic properties of Ta-based resonators and identify vortex motion-induced loss as the source of thermally activated microwave loss. Through careful magnetoresistance and x-ray diffraction measurements, we observe that the increased loss occurs for films that are in the clean limit, where the superconducting coherence length is shorter than the mean free path. Vortex motion-induced losses are suppressed for films in the dirty limit, which show evidence of structural defects that can pin vortices. We verify this hypothesis by explicitly pinning vortices via patterning and find that we can suppress the loss by microfabrication.

cond-mat.supr-con

Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation

The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. We find that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, suggesting total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide TLS loss in superconducting qubits.

cond-mat.supr-con