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Rebecca W. Smaha

Publications and source records attributed to Rebecca W. Smaha.

At least 19 recordsLinked to original sources

Synthesis and properties of bulk Mg$_3$WN$_4$ in a wurtzite-derived structure

Experimental synthesis of theoretically predicted materials with controlled elemental coordination environments can lead to realization of useful properties, such as facile ion transport or ferroelectric switching. Among such materials are new ternary nitrides in the Mg-W-N composition space, where several new stable and metastable compounds have been predicted and synthesized recently in bulk and film forms. Here, we report for the first time on the bulk synthesis of Mg$_3$WN$_4$ in a wurtzite-derived crystal structure via a solid state metathesis reaction. $In$ $situ$ synchrotron powder X-ray diffraction shows how the ion exchange proceeds from Li$_6$WN$_4$ + 3 MgCl$_2$ precursors to Mg$_3$WN$_4$ + 6 LiCl products, with the reaction starting slowly near 380 $^\circ$C and completing by 600 $^\circ$C, including the presence of a competing disordered rocksalt-derived phase (Mg,W)N above 440 $^\circ$C. The follow up $ex$ $situ$ powder synthesis at 400 $^\circ$C for 0.5 hour with 10% excess MgCl$_2$ reveals the cation-ordered nature of the wurtzite-derived Mg$_3$WN$_4$ structure with polar symmetry confirmed by second harmonic generation measurements. Optical absorption spectra, chemical composition analysis, and electron microscopy imaging suggests that bulk wurtzite Mg$_3$WN$_4$ is prone to defect formation. Overall, this study shows that selective $ex$ $situ$ synthesis of the phase pure ternary nitrides, informed by \textit{in situ} measurements, is possible by carefully controlling the thermal budget of the reaction, and paves a way towards property characterization of wurtzite Mg$_3$WN$_4$.

cond-mat.mtrl-sci↗

Thin-Film Stabilization and Magnetism of η-Carbide Type Iron Nitrides

Transition-metal nitrides in η-carbide type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the η-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive co-sputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide angle X-ray scattering, we establish that Fe3Mo3N-based η-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where η structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs. composition phase diagrams that capture the narrow nitrogen chemical-potential stability of η-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe3.54Mo2.46N with a small exchange-bias-like response that is absent in Fe3W3N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for η-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

cond-mat.mtrl-sci↗

Ferrimagnetic Order in Tetragonal Antiperovskite Mn$_3$GeN

The crystal and magnetic structures of the nitride antiperovskite Mn$_3$GeN reveals ferrimagnetic order stemming from a distorted kagome-derived lattice of the Mn atoms. Polycrystalline Mn$_3$GeN was synthesized via a solid-state reaction and characterized using neutron powder diffraction, DC magnetometry, and first-principles calculations. Rietveld refinement reveals near-stoichiometric composition (Mn$_3$GeN$_{0.94(1)}$) adopting a tetragonal $I4/mcm$ structure at $T$ = 500 K and below, featuring axially distorted and tilted [NMn$_6$] octahedra that result in a buckled Mn kagome lattice. On heating, the tetragonal distortion and octahedral tilt angle decrease continuously before transitioning to the cubic $Pm\bar{3}m$ antiperovskite phase at $T \approx$ 524 K. Neutron diffraction and magnetometry together reveal noncollinear ferrimagnetic ordering. For 30 K $\le T \le$ 500 K, the magnetic structure is described by a single propagation vector, $k$ = (0, 0, 0), with inequivalent Mn1 and Mn2 sublattices that couple antiferromagnetically to yield a net moment. Density functional theory-based calculations show the different local moments originate from the bandwidths associated with the distinct Mn-N bond lengths. The temperature dependence of the sublattice moments indicates a compensation-like crossover between Mn1- and Mn2-derived magnetization near 380 K. These findings uncover a previously unrecognized subtlety in the magnetic and structural behavior of Mn$_3$GeN, highlighting the interplay between structural distortions, magnetic ordering, and electronic structure in kagome-derived antiperovskite materials.

cond-mat.mtrl-sci↗

Interplay of Ferromagnetic and Antiferromagnetic Interactions in Epitaxial Co$_3$ZnN

Antiperovskite nitrides with the general formula M$_3$N have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic stability and intriguing magnetic behavior. Here, we report the synthesis and magnetic characterization of epitaxial Co$_3$ZnN thin films grown by radio frequency sputtering on SrTiO$_3$ (STO) and MgO substrates. X-ray diffraction confirms phase-pure (00l)-oriented films with cube-on-cube epitaxy on STO, with a c-lattice parameter of 3.752 angstroms. Magnetic measurements reveal clear hysteresis at 2 K with a coercive field of ~ 0.12 T and a small net moment of 0.11 $μ_B$/f.u., suggesting either a canted antiferromagnetic (AFM) or ferrimagnetic (FiM) configuration. Temperature-dependent magnetization measurements show a transition near 25 K, with strong AFM interactions (Curie-Weiss $Θ$ = -80.6 K) at high temperatures and short-range ferromagnetic correlations ($Θ$ = +9.7 K) emerging near the transition. Complementary density functional theory (DFT) and Monte Carlo simulations indicate a ferromagnetic (FM) ground state, with the FM-AFM energy difference decreasing systematically with increasing supercell size, consistent with competition between FM and AFM/FiM interactions. These results highlight Co$_3$ZnN as a magnetically complex antiperovskite nitride with competing exchange interactions.

cond-mat.mtrl-sci↗

Magnetosynthesis effect on the structure and ground state of Cu$^{2+}$-based antiferromagnets

Subtle synthetic variables can have an outsizes influence on the crystal structure and magnetic properties of a material, particularly those of quantum materials. In this work, we investigate the impact of synthesis under a magnetic field (magnetosynthesis) on the crystal structure and magnetic properties of several Cu$^{2+}$ ($S=1/2$) based materials with antiferromagnetic interactions and varying levels of magnetic frustration, from simple antiferromagnets to a quantum spin liquid. We employ small (0.09 - 0.37 T) magnetic fields applied during low-temperature hydrothermal or evaporative synthesis of the simple antiferromagnet CuCl$_2\cdot$2H$_2$O, the canted antiferromagnet (Cu,Zn)$_3$Cl$_4$(OH)$_2\cdot$2H$_2$O, the frustrated and canted antiferromagnet atacamite Cu$_2$(OH)$_3$Cl, and the highly frustrated quantum spin liquid herbertsmithite Cu$_3$Zn(OH)$_6$Cl$_2$. We found that (Cu,Zn)$_3$Cl$_4$(OH)$_2\cdot$2H$_2$O experiences structural changes well above its magnetic transition. Atacamite Cu$_2$(OH)$_3$Cl synthesized under a 0.19 T field experiences a 0.15 K (~3%) decrease in its Néel transition temperature and a significant strengthening of its antiferromagnetic interactions, suggesting that magnetosynthesis can influence the ground state of moderately frustrated materials.

cond-mat.str-el↗

Structural stability, elemental ordering, and transport properties of layered ScTaN2

Some ternary TM nitrides are predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Synthesis of TM ternary nitride films by physical vapor deposition often favors disordered 3D structures rather than the predicted 2D-like layered structure. In this study, we investigate the structural interplay in the Sc-Ta-N material system, focusing on ScTaN2. We use a two-step combinatorial approach to deposit Sc-Ta-N films by RF co-sputtering and then process the resulting 3D-structured precursor with RTA. Synchrotron GIWAXS on films annealed at 1200 °C for 20 min reveals the nucleation of the layered structure (P63/mmc) within a composition window of x = Sc/(Sc+Ta) = 0.2-0.5. We estimate the long-range order parameter in stoichiometric ScTaN2 films to be 0.86, corresponding to a fraction of antisites of 7%. Interestingly, we find that the structure can accommodate large off-stoichiometry in the Ta-rich region (x < 0.5), facilitated by making an alloy with the nearly isostructural Ta5N6 compound that exists on a composition tie-line. Transport measurements on ScTaN2 reveal a nearly temperature-independent high carrier density (1021 cm-3), suggesting a heavily doped semiconductor or semimetallic character. The carrier mobility is relatively small (9.5 cm2V-1s-1 at 2 K) and the residual-resistivity ratio is small, suggesting that electrical conduction is dominated by defects or disorder. Measured magnetoresistance is indicative of weak antilocalization at low temperatures. We highlight the interplay between ScTaN2 and Ta5N6 in stabilizing layered structures, emphasizes the importance of cation order/disorder for potential tunable alloys, and suggests that ScTaN2 is promising platform for exploring electronic properties in a tie line of stoichiometry.

cond-mat.mtrl-sci↗

Identifying Universal Spin Excitations in Spin-1/2 Kagome Quantum Spin Liquid Materials

A quantum spin liquid (QSL) is an exotic quantum state of matter characterized by fluctuating spins which may exhibit long-range entanglement. Among the possible host candidates for a QSL ground state, the $S$=1/2 kagome lattice antiferromagnet is particularly promising. Using high resolution inelastic neutron scattering measurements on Zn-barlowite (Zn$_\mathrm{x}$Cu$_\mathrm{4-x}$(OD)$_\mathrm{6}$FBr, $x\simeq 0.80$), we measure a spin excitation spectrum consistent with a QSL ground state. Continuum scattering above $\sim$1 meV matches that of herbertsmithite (Zn$_\mathrm{x}$Cu$_\mathrm{4-x}$(OD)$_6$Cl$_2$, $x\simeq 0.85$), another prominent kagome QSL material, indicating universal spinon excitations. A detailed analysis of the spin-spin correlations, compared with density matrix renormalization group calculations, further indicate a QSL ground state for the physically relevant Hamiltonian parameters. The measured spectra in Zn-barlowite are consistent with gapped behavior with a gap size $Δ= 1.1(2)$ meV. Comparison with a simple pair correlation model allows us to clearly distinguish intrinsic kagome correlations from impurity-induced correlations. Our results clarify the behavior that is universal within this important family of QSL candidate materials.

cond-mat.str-el↗

Synthesis pathways to thin films of stable layered nitrides

Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but often struggle to yield the thermodynamic ground state. Growing thermodynamically-stable structures using kinetically-limited synthesis methods in important for practical applications in electronics and energy conversion. Here, we reveal a synthesis pathway to thermodynamically-stable ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapor precursors leads to a 3D long-range disordered MgMoN2 thin film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN2, MgWN2 and MgTa2N3, and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.

cond-mat.mtrl-sci↗

Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys

The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating a significant level of RE cations into AlN has been limited so far because it is thermodynamically challenging to stabilize such heterostructural alloys. Using combinatorial co-sputtering, we synthesized Al1-xRExN (RE = Pr, Tb) thin films and performed a rapid survey of the composition-structure-property relationships as a function of RE alloying. Under our growth conditions, we observe that Al1-xPrxN maintains a phase-pure wurtzite structure until transitioning to amorphous for x>0.22. Al1-xTbxN exhibits a phase-pure wurtzite structure until x<0.15, then exhibits mixed wurtzite and rocksalt phases for 0.16<x<0.28, and finally becomes amorphous beyond that. Ellipsometry measurements reveal that the absorption onset decreases with increasing rare earth incorporation and has a strong dependence on the phases present. We observe the characteristic cathodoluminescence emission of Pr3+ and Tb3+, respectively. Using this synthesis approach, we have demonstrated incorporation of Pr and Tb into the AlN wurtzite structure up to higher compositions levels than previously reported and made the first measurements of corresponding structural and optoelectronic properties.

cond-mat.mtrl-sci↗

From Prediction to Experimental Realization of Ferroelectric Wurtzite Al$_{1-x}$Gd$_{x}$N Alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors such as Si, SiC and III-Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al$_{1-x}$Gd$_x$N alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction $x$ of $x>$ 0.10$-$0.15. Experimentally, ferroelectric switching is observed at room temperature in Al$_{1-x}$Gd$_x$N films with $x>$ 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously (Lee et al., $\textit{Science Advances}$ 10, eadl0848, 2024). This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

cond-mat.mtrl-sci↗

GdWN$_3$ is a Nitride Perovskite

Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN$_3$ is a non-perovskite monoclinic structure. Here, we experimentally show that GdWN$_3$ crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd$_{1-x}$W$_{x}$N$_{3-y}$ with low oxygen content within the bulk of the films. Ex-situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near $x=1$. LeBail fits of synchrotron grazing incidence wide angle X-ray scattering data are consistent with a perovskite ground-state structure. New density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN$_3$ is a distorted $Pnma$ perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN$_3$ is paramagnetic down to $T=2$ K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important stepping stone towards the rapid expansion of the emerging family of nitride perovskites and towards our understanding of their potential multiferroic properties.

cond-mat.mtrl-sci↗

Bulk synthesis of Zn$_3$WN$_4$ via solid-state metathesis

Ternary nitrides are of growing technological importance, with applications as semiconductors, catalysts, and magnetic materials; however, new synthetic tools are needed to advance materials discovery efforts. Here, we show that Zn$_3$WN$_4$ can be synthesized via metathesis reactions between Li$_6$WN$_4$ and Zn$X_2$ ($X$ = Br, Cl, F). In situ synchrotron powder X-ray diffraction and differential scanning calorimetry show that the reaction onset is correlated with the Zn$X_2$ melting point and that product purity is inversely correlated with the reaction's exothermicity. High resolution synchrotron powder X-ray diffraction measurements show that this bulk synthesis produces a structure with substantial cation ordering, as opposed to the disordered structure initially discovered via thin film sputtering. Diffuse reflectance spectroscopy reveals that Zn$_3$WN$_4$ powders exhibit two optical absorption onsets at 2.5 eV and 4.0 eV, indicating wide-bandgap semiconducting behavior and suggesting a small amount of structural disorder. We hypothesize that this synthesis strategy is generalizable because many potential Li-$M$-N precursors (where $M$ is a metal) are available for synthesizing new ternary nitride materials. This work introduces a promising synthesis strategy that will accelerate the discovery of novel functional ternary nitrides and other currently inaccessible materials.

cond-mat.mtrl-sci↗

Local probe investigation of the spin dynamics in the kagome and inter-layers of orthorhombic barlowite Cu$_4$(OD)$_6$FBr: $^{79}$Br and $^{63}$Cu NQR study

We report $^{79}$Br and $^{63}$Cu nuclear quadrupole resonance (NQR) in the paramagnetic state above $T_\text{N} = 15$ K of the antiferromagnetic orthorhombic phase of barlowite Cu$_4$(OD)$_6$FBr consisting of a layered kagome structure. The divergent behavior of the longitudinal $^{79}(1/T_{1})$ and transverse $^{79}(1/T_{2})$ relaxation rates observed at $^{79}$Br sites evidences that critical slowing down of Cu spin fluctuations sets in below $\sim20$ K. This means that one or more Cu sites, most likely at the interlayer Cu(3,4,5) sites between the kagome planes, undergo the antiferromagnetic phase transition in a fairly conventional way. On the other hand, the $^{63}$Cu NQR signal intensity is gradually wiped out below $\sim30$ K, pointing toward gradual spin freezing of the kagome layers instead. These contrasting findings suggest significant roles played by magnetic frustration effects within the kagome layers.

cond-mat.str-el↗

Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission

Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we report the design and implementation of an autonomous workflow for sputter deposition of thin films with controlled composition, leveraging a highly automated sputtering reactor custom-controlled by Python, optical emission spectroscopy (OES), and a Bayesian optimization algorithm. We modeled film composition, measured by x-ray fluorescence, as a linear function of emission lines monitored during the co-sputtering from elemental Zn and Ti targets in N$_2$ atmosphere. A Bayesian control algorithm, informed by OES, navigates the space of sputtering power to fabricate films with user-defined composition, by minimizing the absolute error between desired and measured emission signals. We validated our approach by autonomously fabricating Zn$_x$Ti$_{1-x}$N$_y$ films with deviations from the targeted cation composition within relative 3.5 %, even for 15 nm thin films, demonstrating that the proposed approach can reliably synthesize thin films with specific composition and minimal human interference. Moreover, the proposed method can be extended to more difficult synthesis experiments where plasma intensity depends non-linearly on pressure, or the elemental sticking coefficients strongly depend on the substrate temperature.

physics.app-ph↗

Bulk and film synthesis pathways to ternary magnesium tungsten nitrides

Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology applications where stable ground state structures are sometimes required. Here, we explore the uncharted Mg-W-N chemical phase space, using rapid thermal annealing to reconcile the differences between thin film and bulk powder syntheses. Combinatorial co-sputtering synthesis from Mg and W targets in a N$_2$ environment yielded cation-disordered Mg-W-N phases in the rocksalt (0.1< Mg/(Mg+W) <0.9), and hexagonal boron nitride (0.7< Mg/(Mg+W) <0.9) structure types. In contrast, bulk synthesis produced a cation-ordered polymorph of MgWN$_2$ that consists of alternating layers of rocksalt-like [MgN$_6$] octahedra and nickeline-like [WN$_6$] trigonal prisms (denoted "rocksaline"). Thermodynamic calculations corroborate these observations, showing rocksaline MgWN$_2$ is stable while other polymorphs are metastable. We also show that rapid thermal annealing can convert disordered rocksalt films to this cation-ordered polymorph near the MgWN$_2$ stoichiometry. Electronic structure calculations suggest that this rocksalt-to-rocksaline structural transformation should also drive a metallic-to-semiconductor transformation. In addition to revealing three new phases (rocksalt MgWN$_2$ and Mg$_3$WN$_4$, hexagonal boron nitride Mg$_3$WN$_4$, and rocksaline MgWN$_2$), these findings highlight how rapid thermal annealing can control polymorphic transformations, adding a new strategy for exploration of thermodynamic stability in uncharted phase spaces.

cond-mat.mtrl-sci↗

Structural and Optoelectronic Properties of Thin Film LaWN$_3$

Nitride perovskites are an emerging class of materials that have been predicted to display a range of interesting physics and functional properties, but they are under-explored due to the difficulty of synthesizing oxygen-free nitrides. LaWN3, recently reported as the first oxygen-free nitride perovskite, exhibited polar symmetry and a large piezoelectric coefficient. However, the predicted ferroelectric switching was hindered by large leakage current, which motivates better understanding of its electronic structure and optical properties. Here, we study the structure and optoelectronic properties of thin film LaWN3 in greater detail, employing combinatorial techniques to correlate these properties with cation stoichiometry. We report a two-step synthesis that utilizes a more common RF substrate bias instead of a nitrogen plasma source, yielding nanocrystalline films that are crystallized by ex-situ annealing. We investigate the structure and composition of these films, finding polycrystalline La-rich and highly textured W-rich films. The optical absorption onset and temperature- and magnetic field-dependent resistivity are consistent with semiconducting behavior and are highly sensitive to cation stoichiometry, which may be related to amorphous impurities: metallic W or WNx in W-rich samples and insulating La2O3 in La-rich samples. The fractional magnetoresistance is linear and small, consistent with defect scattering, and a W-rich sample has n-type carriers with high densities and low mobilities. We demonstrate a photoresponse in LaWN3: the resistivity of a La-rich sample is enhanced by 28% at low temperature, likely due to a defect trapping mechanism. The physical properties of LaWN3 are highly sensitive to cation stoichiometry, like many oxide perovskites, which therefore calls for precise composition control to utilize the interesting properties observed in this nitride perovskite.

cond-mat.mtrl-sci↗

Emergence of the spin polarized domains in the kagome lattice Heisenberg antiferromagnet Zn-barlowite (Zn$_{0.95}$Cu$_{0.05}$)Cu$_{3}$(OD)$_{6}$FBr

Kagome lattice Heisenberg antiferromagnets are known to be highly sensitive to perturbations caused by structural disorder. NMR is a local probe ideally suited for investigating such disorder-induced effects, but in practice large distributions in the conventional one-dimensional NMR data make it difficult to distinguish the intrinsic behavior expected for pristine kagome quantum spin liquids from disorder induced effects. Here we report the development of a two-dimensional NMR data acquisition scheme applied to Zn-barlowite (Zn$_{0.95}$Cu$_{0.05}$)Cu$_{3}$(OD)$_{6}$FBr kagome lattice, and successfully correlate the distribution of the low energy spin excitations with that of the local spin susceptibility. We present evidence for the gradual growth of domains with a local spin polarization induced by 5\% Cu$^{2+}$ defect spins occupying the interlayer non-magnetic Zn$^{2+}$ sites. These spin polarized domains account for $\sim60$\% of the sample volume at 2~K, where gapless excitations induced by interlayer defects dominate the low energy sector of spin excitations within the kagome planes.

cond-mat.str-el↗

Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties

Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior.

cond-mat.mtrl-sci↗