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Rehan Kapadia

Publications and source records attributed to Rehan Kapadia.

15 recordsLinked to original sources

Accelerated Discovery of Materials with Extreme Work Functions through Uncertainty-Aware Multi-Fidelity Screening

Work function plays a pivotal role in technologies ranging from energy conversion and electronics to catalysis. In this work, we integrated machine learning (ML) with multi-fidelity screening to develop a data-driven framework for accelerating the discovery of materials with extreme work functions. We augmented a previously published Random Forest (RF) model for work function to include prediction uncertainty calibration and domain of applicability assessment to enhance prediction robustness. By combining the augmented RF model with universal ML interatomic potential simulations and targeted ab initio calculations, we screened 5.5 million compounds from the GNoME and Alexandria databases. This workflow identified 209 surfaces with extreme low work functions below 2.0 eV and 227 surfaces with extreme high work functions above 6.0 eV, corresponding to 136 and 172 unique materials, respectively. The resulting candidates revealed trends consistent with established chemical principles, including the tendency of alkali- and alkaline-earth-terminated surfaces to exhibit low work functions. While it also uncovered less conventional motifs: lanthanide-rich surface terminations were strongly associated with extremely low work functions, whereas surfaces containing metalloids or phosphorus at the top layer were correlated with exceptionally high work functions. This work demonstrates a scalable strategy that leverages ML models and multi-fidelity computational efforts to accelerate the discovery of materials with extreme work functions for advanced electronic, energy-conversion, and catalytic applications.

cond-mat.mtrl-sci

Lie Generator Networks Extract EIS-Grade Battery Diagnostics from Pulse Relaxation Data

Electrochemical impedance spectroscopy (EIS) is the most informative diagnostic for lithium-ion batteries: its frequency-resolved spectra decompose cell behavior into distinct electrochemical processes, revealing mechanism-specific degradation invisible to voltage and resistance measurements. Yet EIS requires dedicated hardware and minutes-long acquisitions incompatible with field deployment. Here we show that Lie Generator Networks (LGN), a structure-preserving identification framework, extract electrochemical time constants from 60 seconds of post-pulse voltage relaxation, data that battery management systems already collect, that encode the same diagnostic and prognostic information as impedance spectra. LGN learns the generator matrix of the relaxation dynamics with stability guaranteed by architecture, yielding time constants precise enough to resolve electrochemical variation that conventional curve fitting cannot detect from identical data. Across five datasets totaling over 850 cells, four institutions, and multiple chemistries, LGN tracks degradation with near-perfect rank correlation ($|\rho_s| = 0.999$), enables cross-validated reconstruction of full Nyquist spectra at 2% median error across 227 cells, predicts which capacity-matched cells fail first from three early diagnostics, and recovers Arrhenius activation energies with zero physics priors without retraining or cell-specific tuning. LGN requires no training data, no impedance hardware, and no chemistry-specific calibration, converting any existing relaxation pulse into an impedance-grade diagnostic. This enables real-time health monitoring, rapid second-life grading, production-line quality control, and physics-informed prognosis from minutes of measurement.

eess.SY

The Routing and Filtering Structure of Attention

The attention interaction matrix $QK^{\top}$ contains two entangled computations: a skew-symmetric component that redistributes information between positions (routing) and a symmetric component that scales mutual relevance (filtering). We decompose 1776 heads across five pretrained transformers and find routing operating at low rank, well below the routing capacity allocated by the weight kernel. We introduce $S$-$D$ attention as a diagnostic parameterization that disentangles routing from filtering by construction with guaranteed stability ($\mathrm{Re}(\lambda) \le 0$) and trains stably without layer normalization. When disentangled and unnormalized, routing self-organizes into a spectral cascade, effective rank $2$ at the first layer, expanding with depth across six scales from 7M to 355M parameters. The cascade predicts where attention can be simplified: linearizing the first seven layers of 125M $S$-$D$ attention costs ${<}5\%$ perplexity, whereas standard attention collapses under the same intervention. The linearizable region widens with depth. Replacing the first four layers with ELU+1 linear attention reaches within $1.4\%$ of baseline at full head dimension. Cascade-allocated architectures trade attention parameters for perplexity ($47\%-65\%$ fewer attention parameters at $+3.9\%$ to $+8.4\%$ PPL). The routing-filtering decomposition makes the spectral budget legible; the cascade makes it actionable.

cs.LG

Lie Generator Networks for Nonlinear Partial Differential Equations

Linear dynamical systems are fully characterized by their eigenspectra, accessible directly from the generator of the dynamics. For nonlinear systems governed by partial differential equations, no equivalent theory exists. We introduce Lie Generator Network-Koopman (LGN-KM), a neural operator that lifts nonlinear dynamics into a linear latent space and learns the continuous-time Koopman generator ($L_k$) through a decomposition $L_k = S - D_k$, where $S$ is skew-symmetric representing conservative inter-modal coupling, and $D_k$ is a positive-definite diagonal encoding modal dissipation. This architectural decomposition enforces stability and enables interpretability through direct spectral access to the learned dynamics. On two-dimensional Navier--Stokes turbulence, the generator recovers the known dissipation scaling and a complete multi-branch dispersion relation from trajectory data alone with no physics supervision. Independently trained models at different flow regimes recover matched gauge-invariant spectral structure, exposing a gauge freedom in the Koopman lifting. Because the generator is provably stable, it enables guaranteed long-horizon stability, continuous-time evaluation at arbitrary time, and physics-informed cross-viscosity model transfer.

cs.LG

Interpretable Physics Extraction from Data for Linear Dynamical Systems using Lie Generator Networks

When the system is linear, why should learning be nonlinear? Linear dynamical systems, the analytical backbone of control theory, signal processing and circuit analysis, have exact closed-form solutions via the state transition matrix. Yet when system parameters must be inferred from data, recent neural approaches offer flexibility at the cost of physical guarantees: Neural ODEs provide flexible trajectory approximation but may violate physical invariants, while energy preserving architectures do not natively represent dissipation essential to real-world systems. We introduce Lie Generator Networks (LGN), which learn a structured generator A and compute trajectories directly via matrix exponentiation. This shift from integration to exponentiation preserves structure by construction. By parameterizing A = S - D (skew-symmetric minus positive diagonal), stability and dissipation emerge from the underlying architecture and are not introduced during training via the loss function. LGN provides a unified framework for linear conservative, dissipative, and time-varying systems. On a 100-dimensional stable RLC ladder, standard derivative-based least-squares system identification can yield unstable eigenvalues. The unconstrained LGN yields stable but physically incorrect spectra, whereas LGN-SD recovers all 100 eigenvalues with over two orders of magnitude lower mean eigenvalue error than unconstrained alternatives. Critically, these eigenvalues reveal poles, natural frequencies, and damping ratios which are interpretable physics that black-box networks do not provide.

cs.LG

Textured growth and electrical characterization of Zinc Sulfide on back-end-of-the-line (BEOL) compatible substrates

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension. Three-dimensional integration of high-performance logic demands solving the challenge of low-temperature (less than 450{\deg}C) synthesis of high-mobility n-type and p-type semiconductor thin films for back-end-of-line (BEOL) compatible transistors. Metal oxides, particularly indium oxides alloyed with gallium and tungsten, are promising n-type channel materials, but suitable p-type materials for BEOL remain scarce. Zinc sulfide (ZnS), a wide band-gap semiconductor, shows room-temperature p-type conductivity when doped with copper and crystallizes below 400{\deg}C. Here, we report growth of crystalline ZnS thin films by pulsed laser deposition on amorphous and polycrystalline surfaces including silicon nitride, thermal silicon dioxide, yttrium oxide, hafnium dioxide, sapphire, platinum, and titanium nitride. X-ray diffraction reveals out-of-plane texturing across all surfaces, while grazing incidence wide-angle X-ray scattering probes in-plane crystalline quality. Surface and interface properties are assessed using X-ray reflectivity and atomic force microscopy. Electrical characterization via J-V measurements (ZnS on Pt) and metal-oxide-semiconductor capacitor (ZnS on silicon dioxide) measurements show low leakage current ($10^{-5} A/cm^2$ at 0.40 MV/cm) and bilayer capacitor behavior, suggesting ZnS is highly intrinsic with minimal electrically active defects. Further work on doping ZnS with copper or other p-type elements is needed to realize ZnS as a dopable wide band-gap semiconductor for BEOL integration. This work demonstrates a novel thin-film growth method for sulfide semiconductors under BEOL-compatible conditions.

cond-mat.mtrl-sci

Photoconductive Effects in Single Crystals of BaZrS$_3$

Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.

physics.app-ph

Multifunctional photoresponsive organic molecule for electric field sensing and modulation

Organic molecules with nonlinear optical behavior have advanced a wide range of fields spanning from integrated photonics to biological imaging. With advances in microscopy, an emerging application is multifunctional nonlinear organic imaging agents. Unlike conventional imaging probes which simply emit light through single or multi photon processes, multifunctional materials allow systems to be simultaneously imaged and controlled. In this work, we report a multifunctional molecular probe for modulating and reporting electric fields. The probe molecule consists of two distinct functional modules which are connected by a long alkyl chain. The electric field detector module relies on the two-photon (2p) imaging agent and photo-induced electron transfer (PeT) dye, TPE. Two-photon imaging agents have demonstrated less damage and larger penetration depths in cells and live tissue imaging. The electric field modulator module relies on the organic photoconductor, NAI. To reduce cross-talk and optimize absorption and emission wavelengths, the molecular structure is first studied using density functional theory modeling, and then the multi-functional molecular probe is synthesized. The photophysical, photoconductivity, and biotoxicity of the probe molecule are studied in a range of solvents and solid state, and the results agree with the theoretical predictions. Specifically, 2p excitation in a biocompatible solvent is demonstrated, the photoconductivity is rapid and reversible, and the material has low cytotoxicity. Additionally, the entire system is optically controlled, including signal read-out, and the two modules can be operated simultaneously or individually. This work sets the stage for modulation and detection of bioelectric fields in a range of cell and tissue types.

physics.chem-ph

Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells

Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of their optical properties, it is necessary to grow these materials in high crystalline quality to develop a fundamental understanding of their optical properties and evaluate their suitability for photovoltaic application. Here, we report the growth of single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7, with a natural superlattice-like structure of alternating double-layer perovskite blocks and single-layer rock salt structure. The material demonstrated a bright photoluminescence peak at 1.28 eV with a large external luminescence efficiency of up to 0.15%. We performed time-resolved photoluminescence spectroscopy on these crystals and obtained an effective recombination time of ~65 ns. These results clearly show that 2D Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to achieve single-junction solar cells.

cond-mat.mtrl-sci

Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.

cond-mat.mtrl-sci

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

cond-mat.mtrl-sci

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

cond-mat.mes-hall

Highly Quantum-Confined InAs Nanoscale Membranes

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.

cond-mat.mtrl-sci

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.

cond-mat.mtrl-sci

Development of a Compact Neutron Source based on Field Ionization Processes

The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron production are presented. Ongoing experiments to increase neutron production yields by optimizing the field emitter geometry and surface conditions are discussed.

physics.acc-ph